DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit : mm) The 2SJ462 is a switching device which can be driven directly 5.7 ±0.1 2.0 ±0.2 by an IC operating at 3 V. The 2SJ462 features a low on-state resistance and can be 1.5 ±0.1 1 1.0 FEATURES • Can be driven by a 2.5 V power source. 0.55 tions such as power management. 2 3 0.5 ±0.1 • New-type compact package. 5.4 ±0.25 3.65 ±0.1 driven by a low voltage power source, so it is suitable for applica- 0.5 ±0.1 2.1 Has advantages of packages for small signals and for power 0.4 ±0.05 0.85 ±0.1 4.2 transistors, and compensates those disadvantages. • Low on-state resistance. RDS(ON) : 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A Equivalent Circuit RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A Electrode Connection 1. Source 2. Drain 3. Gate Drain ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C) Drain to Source Voltage VDSS –12 V Gate to Source Voltage VGSS ±8.0 V Drain Current (DC) ID(DC) ±2.5 A Drain Current (pulse) ID(pulse) ±5.0* A Total Power Dissipation PT 2.0** W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Internal Diode Gate Gate Protect Diode Source Marking : UA3 * PW ≤ 10 ms, Duty Cycle ≤ 1 % ** Mounted on ceramic board of 7.5 cm2 × 0.7 mm Document No. D11449EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan © 1996 2SJ462 ELECTRICAL SPECIFICATIONS (TA = +25 ˚C) Parameter 2 Symbol MIN. TYP. MAX. Unit Conditions Drain Cut-off Current IDSS –10 µA VDS = –12 V, VGS = 0 Gate Leakage Current IGSS ±10 µA VGS = ±8.0 V, VDS = 0 Gate Cut-off Voltage VGS(off) –0.7 –1.3 V VDS = –3.0 V, ID = –1.0 mA Forward Transfer Admittance |yfs| 1.5 S VDS = –3.0 V, ID = –1.0 A Drain to Source On-State Resistance RDS(on)1 195 290 mΩ VGS = –2.5 V, ID = –0.5 A Drain to Source On-State Resistance RDS(on)2 135 190 mΩ VGS = –4.0, ID = –1.0 A Input Capacitance Ciss 940 pF VDS = –3.0 V, VGS = 0 Output Capacitance Coss 835 pF f = 1.0 MHz Reverse Transfer Capacitance Crss 495 pF Turn-On Delay Time td(on) 45 ns VDD = –3.0 V, ID = –1.0 A Rise Time tr 225 ns VGS(on) = –3.0 V, RG = 10 Ω Turn-Off Delay Time td(off) 140 ns Fall Time tf 195 ns Total Gate Charge QG 12 nC VDS = –8 V, ID = –2.5 A Gate to Source Charge QGS 2 nC VGS = –3.0 V, IG = –2 mA Gate to Drain Charge QGD 7 nC Diode Forward Voltage VF(S–D) –0.86 V IF = –2.5 A, VGS = 0 Reverse Recovery Time trr 150 ns IF = –2.5 A, VGS = 0 Reverse Recovery Charge Qrr 160 nC di/dt = 50 A/µs –1.0 RL = 3.0 Ω 2SJ462 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 –10 1 10 ID - Drain Current - A dT - Derating Factor - % 80 60 40 m s m s PW =1 00 –1 ms DC 20 Single Pulse 0 0 30 60 90 120 –0.1 –1 150 –10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –5 –5 V TRANSFER CHARACTERISTICS –10 –4 V –3 –2 V –2 VDS = –3 V –1 –3 V ID - Drain Current - A ID - Drain Current - A –4 –100 VDS - Drain to Source Voltage - V TA - Ambient Temperature - ˚C –1 TA = 125 ˚C –0.1 TA = 75 ˚C TA = 25 ˚C –0.01 TA = –25 ˚C –0.001 VGS = –1 V 0 0 –4 –6 –8 –10 –0.0001 0 VDS - Draint to Source Voltage - V –0.5 –1.0 –1.5 –2.0 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VDS = –3 V 1 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 0.1 0.01 –0.0001 –0.001 –0.01 ID - Drain Current - A –0.1 –1 RDS(on) - Drain to Source On-State Resistance - Ω IyfsI - Forward Transfer Admittance - S 10 –2 –2.5 0.6 VGS = –2.5 V 0.5 0.4 TA = 125 ˚C 0.3 75 ˚C 25 ˚C 0.2 –25 ˚C 0.1 0 –0.001 –0.01 –0.1 –1 –10 ID - Drain Current - A 3 0.6 VGS = –4 V 0.5 0.4 0.3 TA = 125 ˚C 75 ˚C 0.2 25 ˚C –25 ˚C 0.1 0 –0.001 –0.01 –0.1 –1 –10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.3 ID = –2.5 A 0.2 –1.0 A –0.5 A 0.1 0 0 –2 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 f = 1 MHz 1 Ciss Coss Crss 0.1 –0.1 –1 VDD = –3 V VGS(on) = –3 V Rin = 10 Ω td(off) td(on) 10 –0.1 –10 –1 –10 ID - Draint Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 12 –10 VDS - Drain to Source Voltage - V VDS = –8 V ID = –2.5 A ID - Reverse Drain Current - A –10 tr 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE –1 –0.1 –0.01 –0.6 –0.8 –1.0 –1.2 VSD - Source to Drain Voltage - V 4 –8 tf VDS - Drain to Source Voltage - V –0.001 –0.4 –6 SWITCHING CHARACTERISTICS 1000 td(on),tr,td(off),tf - Switching Time - ns Ciss,Coss,Crss - Capacitance - pF 10 –4 VGS - Gate to Source Voltage - V –1.4 VGS 4 8 VDS 2 4 0 0 0 8 16 24 QG - Gate Charge - nC 32 40 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - Ω 2SJ462 2SJ462 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 2SJ462 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11