[ /Title (HGT1 S14N4 1G3V LS, HGTP 14N41 G3VL) /Subjec t (14A, 410V NChann el, Logic Level, Voltag e Clampi ng IGBTs ) /Autho r () /Keyw ords (14A, 410V NChann el, Logic Level, Voltag e Clampi ng IGBTs, HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit Formerly Developmental Type TA49360. PACKAGE 4887 Features • Ignition Energy = 340mJ at TJ (STARTING) = 25oC • Typical Internal Clamp Voltage = 410V at TJ = 25oC • Logic Level Gate Drive • ESD Gate Protection • TJ = 175oC • Internal Series and Shunt Gate Resistors • 24V Reverse Battery Capability • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER File Number BRAND HGT1S14N41G3VLS TO-263AB 14N41GVL HGTP14N41G3VL TO-220AB 14N41GVL Packaging JEDEC TO-263AB NOTE: When ordering, use the entire part number. To obtain the TO263AB in tape and reel, drop the S and add the suffix T; i.e. HGT1S14N41G3VLT COLLECTOR (FLANGE) G E Symbol COLLECTOR JEDEC TO-220AB R1 GATE E R2 C G EMITTER COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1 HGT1S14N41G3VLS, HGTP14N41G3VL Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1S14N41G3VLS, HGTP14N41G3VL UNITS Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCER 430 V Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 445 V Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVECS 24 V Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 25 A at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 18 A Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±10 V Inductive Switching Current at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS 15 A at L = 3 mH, TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS 11.5 A Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS 340 mJ Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 136 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/oC Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG -55 to 175 oC Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ -55 to 175 oC Electrostatic Discharge Voltage HBM at 250pF, 1500Ω All Pin Configurations . . . . . . . . .ESD 5 kV Electrostatic Discharge Voltage MM at 200pF, 0Ω All Pin Configurations . . . . . . . . . . . . .ESD 2 kV Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. May be exceeded if IGEM is limited to 10mA. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCER IC = 10mA, RG = 1kΩ, VGE = 0V, TJ = -40oC to 150oC (Figure 17) 380 410 430 V Collector to Emitter Breakdown Voltage BVCES IC = 10mA, VGE = 0V, TJ = -40oC to 150oC 395 425 445 V - 3 - V Gate to Emitter Plateau Voltage Gate Charge Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current VGEP QG(ON) BVCE(CL) BVECS ICES IC = 10A, VCE = 12V IC = 10A, VCE = 12V, VGE = 5V (Figure 16) IC = 15A, RG = 1kΩ IC = 10mA VCE = 350V, VGE = 0V (Figure 13) VCE = 15V, VGE = 0V Emitter to Collector Leakage Current Gate to Emitter Threshold Voltage Collector to Emitter On-State Voltage Collector to Emitter On-State Voltage IECS VGE(TH) VCE(ON) VCE(ON) VEC = 24V, VGE = 0V (Figure 13) IC = 6A, VGE = 4.0V (Figures 3 to 9) IC = 10A, VGE = 4.5V (Figures 3 to 9) IC = 14A, VGE = 5V (Figures 3 to 9) 26 - nC 410 430 V 24 28 - V TJ = 25oC - - 40 µA TJ = 150oC - - 200 µA TJ = 25oC - - 10 µA TJ = 150oC TJ = 25oC TJ = 150oC - - 50 µA - - 1 mA IC = 1mA, VCE = VGE (Figure 12) IC = 10A, VGE = 3.7V (Figures 3 to 9) 380 TJ = 25oC TJ = 150oC TJ = -40oC TJ = 25oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = 175oC - - 40 mA 1.3 1.8 2.2 V - 1.6 2.65 V - 1.7 2.75 V - 1.3 1.7 V - 1.25 1.6 V - 1.45 1.7 V - 1.55 1.8 V - 1.65 2.0 V - 1.8 2.3 V Gate Series Resistance R1 - 80 - Ω Gate to Emitter Resistance R2 10 18 26 kΩ ©2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1 HGT1S14N41G3VLS, HGTP14N41G3VL Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time Resistive Load MIN TYP MAX UNITS IGES VGE = ±10V ±384 ±555 ±1000 µA BVGES IGES = ±5mA ±12 ±14 - V Gate to Emitter Leakage Current Gate to Emitter Breakdown Voltage TEST CONDITIONS td(ON)I Current Turn-On Rise Time Resistive Load trI VDD = 14V, RG = 1kΩ, VGE = 5V (Figure 14) VDD = 14V, RG = 1kΩ, VGE = 5V (Figure 14) IC = 11.5A, TJ = 25oC - 0.9 1.5 µs IC = 6.5A, TJ = 150oC - 0.75 1.6 µs IC = 11.5A, TJ = 25oC - 3.2 4.5 µs IC = 6.5A, TJ = 150oC - 2.7 3.8 µs Current Turn-Off Time - Inductive Load td(OFF)I + tfI IC = 6.5A, RG = 1kΩ, VGE = 5V, L = 300µH, VDD = 300V, TJ = 150oC (Figure 14) - 9 20 µs Current Turn-Off Time - Resistive Load td(OFF)I + tfI IC = 6.5A, RG = 1kΩ, VGE = 5V, RL = 46Ω, VDD = 300V, TJ = 25oC (Figure 14) - 10 15 µs 11.5 - - A 15 - - A 1.1 oC/W Inductive Use Test ISCIS Thermal Resistance RθJC 60 (Figure 18) 52 ISCIS CAN BE LIMITED BY gfs AT VGE = 5V 36 28 TJ = 25oC 20 12 TJ = 150oC 4 40 80 120 160 200 40 ISCIS CAN BE LIMITED BY gfs AT VGE = 5V 32 24 TJ = 25oC 16 8 RG = 1kΩ, VGE = 5V 0 2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 4.0V VGE = 3.7V 1.2 VGE = 4.5V VGE = 5.0V ICE = 6A 100 175 TJ, JUNCTION TEMPERATURE (oC) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE ©2001 Fairchild Semiconductor Corporation 6 8 10 FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs. INDUCTANCE 1.3 25 4 L, INDUCTANCE (mH) FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN AVALANCHE 1.0 -50 TJ = 150oC 0 tAV, TIME IN AVALANCHE (µs) 1.1 - Unless Otherwise Specified RG = 1kΩ, VGE = 5V 44 - ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) Typical Performance Curves TC = 150oC L = 3mH, VG = 5V, RG = 1kΩ (Figures 1, 2) TC = 25oC 1.62 ICE = 10A 1.58 VGE = 4.0V 1.54 VGE = 3.7V 1.50 1.46 1.42 1.38 VGE = 5.0V 1.34 -50 VGE = 4.5V 25 100 175 TJ, JUNCTION TEMPERATURE (oC) FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1 HGT1S14N41G3VLS, HGTP14N41G3VL 40 Unless Otherwise Specified (Continued) DUTY CYCLE < 0.5%, TJ = 175oC PULSE DURATION = 250µs ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE = 5.0V 30 VGE = 4.5V 20 VGE = 3.7V 10 VGE = 4.0V 0 0 2 1 3 4 5 40 DUTY CYCLE < 0.5%, TJ = 150oC PULSE DURATION = 250µs 30 VGE = 4.5V 20 VGE = 3.7V VGE = 4.0V 10 0 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 4.5V VGE = 3.7V 20 VGE = 4.0V 10 0 1 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 5.0V 30 0 2 3 4 5 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs 40 1 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 50 VGE = 5.0V 60 DUTY CYCLE < 0.5%, TJ = -40oC PULSE DURATION = 250µs VGE = 5.0V 50 VGE = 4.5V 40 30 VGE = 3.7V 20 VGE = 4.0V 10 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 60 VGE TJ = 25oC 8.0V 50 5.0V 4.5V 40 4.0V 3.5V 30 3.0V 2.5V 20 10 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE ©2001 Fairchild Semiconductor Corporation 40 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 32 TJ = 150oC 24 TJ = 25oC 16 8 TJ = -40oC 0 1 2 3 4 5 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 10. TRANSFER CHARACTERISTIC HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1 HGT1S14N41G3VLS, HGTP14N41G3VL Typical Performance Curves Unless Otherwise Specified (Continued) 2.2 VGE = 5V VGE(TH) , THRESHOLD VOLTAGE (V) ICE , DC COLLECTOR CURRENT (A) 28 24 20 16 12 8 4 0 25 50 75 100 125 150 ICE = 1mA VCE = VGE 2.0 1.8 1.6 1.4 1.2 1.0 -50 175 25 TC , CASE TEMPERATURE (oC) FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 16 ICE = 6.5A, VGE = 5V, RG = 1kΩ 14 VECS = 24V 1000 SWITCHING TIME (µs) LEAKAGE CURRENTS (µA) 10000 100 VCES = 300V 10 VCES = 250V RESISTIVE tOFF 12 10 INDUCTIVE tOFF 8 6 RESISTIVE tON 1 4 0.1 25 50 75 125 100 150 2 25 175 50 TJ, JUNCTION TEMPERATURE (oC) VGE, GATE TO EMITTER VOLTAGE (V) 8 FREQUENCY = 1MHz 2000 1600 CIES 1200 800 CRES COES 0 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation 100 125 150 175 FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE 2400 400 75 TJ , JUNCTION TEMPERATURE (oC) FIGURE 13. LEAKAGE CURRENT vs JUNCTION TEMPERATURE C, CAPACITANCE (pF) 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. DC COLLECTOR CURRENT vs CASE TEMPERATURE 0 100 25 IG(REF) = 1mA, RL = 1.25Ω, TJ = 25oC 6 VCE = 12V 4 2 VCE = 6V 0 0 8 16 24 32 40 48 56 QG, GATE CHARGE (nC) FIGURE 16. GATE CHARGE WAVEFORMS HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1 HGT1S14N41G3VLS, HGTP14N41G3VL Typical Performance Curves Unless Otherwise Specified (Continued) BVCER , BREAKDOWN VOLTAGE (V) 412 TJ (oC) 408 ICER = 10mA -55 404 25 400 150 396 175 392 388 384 380 376 0 2 4 6 8 10 RG , GATE SERIES RESISTANCE (kΩ) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE 100 0.5 0.2 10-1 0.1 t1 0.05 PD 0.02 0.01 10-2 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms 3mH VDD R or L C LOAD C PULSE GEN RG RG = 1kΩ DUT G E G DUT + VDD - 5V E FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1 HGT1S14N41G3VLS, HGTP14N41G3VL TO-263AB SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE E A INCHES A1 H1 MIN MAX MIN MAX A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 4, 5 TERM. 4 D L2 L1 L 1 3 b e L3 b2 0.350 (8.89) 0.700 (17.78) 0.150 (3.81) 1 b 0.030 0.034 0.77 0.86 4, 5 0.045 0.055 1.15 1.39 4, 5 b2 0.310 - 7.88 - 2 c 0.018 0.022 0.46 0.55 4, 5 D 0.405 0.425 10.29 10.79 - E 0.395 0.405 10.04 10.28 e1 0.450 (11.43) TERM. 4 3 c J1 e1 0.080 TYP (2.03) 0.062 TYP (1.58) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS 1.5mm DIA. HOLE NOTES b1 e b1 MILLIMETERS SYMBOL 0.100 TYP 0.200 BSC - 2.54 TYP 7 5.08 BSC 7 H1 0.045 0.055 1.15 1.39 - J1 0.095 0.105 2.42 2.66 - L 0.175 0.195 4.45 4.95 - L1 0.090 0.110 2.29 2.79 4, 6 L2 0.050 0.070 1.27 1.77 3 L3 0.315 - 8.01 - 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92. 2. L3 and b2 dimensions established a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 10 dated 5-99. 4.0mm USER DIRECTION OF FEED 2.0mm TO-263AB 1.75mm C L 24mm TAPE AND REEL 24mm 16mm COVER TAPE 40mm MIN. ACCESS HOLE 30.4mm 13mm 330mm 100mm GENERAL INFORMATION 1. 800 PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS. ©2001 Fairchild Semiconductor Corporation 24.4mm HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1 HGT1S14N41G3VLS, HGTP14N41G3VL TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE A INCHES E ØP A1 Q H1 TERM. 4 D 45o E1 D1 L1 b1 L b c SYMBOL 1 2 e1 J1 MIN MAX NOTES A 0.170 0.180 4.32 4.57 - 0.048 0.052 1.22 1.32 - b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 D 0.590 0.610 14.99 15.49 - 4.06 - 10.41 - D1 - 0.160 E 0.395 0.410 E1 - 0.030 e1 3 e MILLIMETERS MAX A1 e 60o MIN 10.04 - 0.100 TYP 0.200 BSC H1 0.235 0.255 J1 0.100 0.110 L 0.530 0.550 0.76 - 2.54 TYP 5 5.08 BSC 5 5.97 6.47 - 2.54 2.79 6 13.47 13.97 - L1 0.130 0.150 3.31 3.81 2 ØP 0.149 0.153 3.79 3.88 - Q 0.102 0.112 2.60 2.84 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 7-97. ©2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ SMART START™ VCX™ OPTOLOGIC™ FAST® Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ Ensigna™ FACT™ FACT QuietSerie™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER® STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4