The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 May 2002. INCH-POUND MIL-PRF-19500/614B 22 February 2002 SUPERSEDING MIL-PRF-19500/614A 3 May 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381 JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). 1.2 Physical dimensions. See figure 1 (T0-257AA). 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C. Type Min V(BR)DSS VGS = 0 V ID = 1.0 mA dc PT (1) TC = +25°C PT TA = +25°C (free air) VGS ID1 (2) TC = +25°C ID2 (2) TC = +100°C TJ and TSTG V dc W W V dc A dc A dc °C 100 200 75 75 2 2 ±20 ±20 14.4 9.4 9.1 6.0 -55 to +150 -55 to +150 IS IDM 2N7380 2N7381 Type 2N7380 2N7381 (3) Max rDS(on) (1) VGS = 12 V dc ID = ID2 TJ = +25°C TJ = +150°C RθJC max EAS max IAS A dc A(pk) Ω Ω °C/W mJ A dc 14.4 9.4 57 37 0.18 0.40 0.33 0.84 1.67 1.67 150 150 14.4 9.4 (1) Derate linearly by 0.6 W/°C for TC > +25°C; PT = TJMAX - TC RθJC (2) (3) ID = T J max - T C ( R ΘJC )x( R DS on at T Jmax ) IDM = 4 x ID1; ID1 as calculated by footnote (2). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box 3990 Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/614B 1.4 Primary electrical characteristics. Unless otherwise specified, TC = +25°C. Type Min V(BR)DSS VGS = 0 V ID = 1.0 mA dc VGS(th)1 VDS ≥ VGS ID = 1.0 mA dc IDSS max VGS = 0 V VDS = 80 percent of rated VDS Max rDS(on)1 (1) VGS = 12 V; ID = ID2 TJ = +25°C V dc µA dc Ω 25 25 0.18 0.40 V dc 2N7380 2N7381 Min 2.0 2.0 100 200 Max 4.0 4.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION \ DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 2 MIL-PRF-19500/614B Ltr Inches Min BL .410 .420 Min 10.41 Max 10.67 .033 BL1 See note 4 Max Millimeters 0.84 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .600 .650 15.24 16.51 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Drain Term 2 Source Term 3 Gate NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. All terminals are isolated from case. 4. This area is for the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone). FIGURE 1. Dimensions and configuration (T0-257AA). 3 MIL-PRF-19500/614B * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3 (ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. * 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling procedures shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent, if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source. R ≤ 100 k, whenever bias voltage is to be applied drain to source. * 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3. * 3.8 Electrical test requirements. The electrical test requirements shall be group A as specified herein. * 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4 MIL-PRF-19500/614B 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500, and table III herein. * 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level (1) JANTXV level Thermal response (see 4.5.3) Thermal response (see 4.5.3) (1) (2) Method 3470 of MIL-STD-750. (see 4.5.5) Method 3470 of MIL-STD-750. (see 4.5.5) (1) (2) Gate stress test (see 4.5.4) Gate stress test (see 4.5.4) IGSS1, IDSS1, subgroup 2 of table I herein; Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSS1, IDSS1, rDS(on)1, VGS(th)1 Subgroup 2 of table I herein. ∆IGSS1 = ±20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ±25 µA dc or ± 100 percent of initial value, whichever is greater. IGSS1, IDSS1, rDS(on)1, VGS(th)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A t = 240 hours Method 1042 of MIL-STD-750, test condition A 13 Subgroup 2 and 3 of table I herein. ∆IGSS1 = ±20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ±25 µA dc or ± 100 percent of initial value, whichever is greater. Subgroup 2 of table I herein. ∆IGSS1 = ±20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ±25 µA dc or ± 100 percent of initial value, whichever is greater. ∆rDS(on)1 = ±20 percent of initial value. ∆VGS(th)1 = ±20 percent of initial value. ∆rDS(on)1 = ±20 percent of initial value. ∆VGS(th)1 = ±20 percent of initial value. (1) 9 (1) Shall be performed anytime before screen 10. (2) This is a stress test designed to ensure a rugged product. 5 MIL-PRF-19500/614B 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table I, subgroup 2 herein. 4.4.2 Group B inspection (JANTX and JANTXV). Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) and table VIb (JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Condition G B4 1042 The heating cycle shall be 1 minute minimum, 2,000 cycles. No heat sink nor forced air cooling on the device shall be permitted. B5 1042 Condition A; VDS = 100 percent of rated; TA = +175°C, t = 120 hours or TA = +150°C, t = 240 hours; read and record VBR(DSS) (pre and post) at ID = 1 mA; read and record IDSS (pre and post), in accordance with table I, group A, subgroup 2. B5 1042 Condition B; VGS = 100 percent of rated TA = +175°C, t = 24 or TA = +150°C, t = 48 hours;. B6 3161 See 4.5.3. 4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Condition G B3 1042 The heating cycle shall be 1 minute minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A, weight = 10 lbs, t = 10 seconds. C6 1042 The heating cycle shall be 1 minute minimum. 4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 6 MIL-PRF-19500/614B * 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. The maximum limit of RθJC(max) shall be 1.67°C/W. The following parameter measurements shall apply: a. Measuring current (IM): ............................ 10 mA. b. Drain heating current (IH): ........................ 2 A minimum. c. Heating time (tH): ..................................... Steady-state (see method 3161 of MIL-STD-750 for definition). d. Drain-source heating voltage (VH): .......... 15 V minimum. e. Measurement time delay (tMD): ................ 30 µs to 60µs maximum. f. Sample window time (tSW ): ...................... 10 µs maximum. * 4.5.3 Thermal impedance ( ZθJC measurements). The ZθJC measurements shall be performed in accordance with MIL-STD-750, method 3161. The maximum limit (not to exceed figure 2, thermal impedance curves and the group A, subgroup 2 limits) for ZθJC in screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation and disposition. This procedure may be used in lieu of an in line process monitor. a. Measuring current (IM): .....................................10 mA. b. Drain heating current (IH):.................................2 A minimum. c. Heating time (tH): ..............................................50 ms. d. Drain-source heating voltage (VH):...................15 V minimum. e. Measurement time delay (tMD): .........................30 µs to 60 µs maximum. f. Sample window time (tSW ): ...............................10 µs maximum. 4.5.4 Gate stress test. a. VGS = ±24 V minimum. b. t = 250 µs minimum. * 4.5.5 Single pulse avalanche energy (EAS). a. Peak current (IAS): ID1. b. Peak gate voltage (VGS): 12 V. c. Gate to source resistor (RGS): 25 ≤ RGS ≤ 200 Ω. d. Initial case temperature: +25°C +10°C, -5°C. e. Inductance: (2 EAS/(ID1) )((VBR - VDD)/VBR) mH minimum. f. Number of pulses to be applied: 1 pulse minimum. g. Supply voltage VDD = 50 V, or 25 V for 100 V devices. 2 7 MIL-PRF-19500/614B * TABLE I. Group A inspection. Inspection 1/ Limits MIL-STD-750 Unit Symbol Method Condition Min Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 2/ 3161 See 4.5.3 Breakdown voltage drain to source 2N7380 2N7381 3407 VGS = 0V, ID = 1 mA dc, bias condition C Gate to source voltage (threshold) 3403 VDS ≥ VGS, ID = 1.0 mA Gate current 3411 VGS = ±20 V dc, VDS = 0 V dc, bias condition C Drain current 3413 Static drain to source on-state resistance 2N7380 2N7381 3421 Static drain to source on-state resistance 2N7380 2N7381 3421 Forward voltage (source drain diode) 2N7380 2N7381 4011 1.30 Z θJC °C/W V (BR)DSS 100 200 4.0 V dc IGSS1 ±100 µA dc VGS = 0 V dc, VDS = 80 percent of rated VDS, bias condition C IDSS1 25 µA dc VGS = 12 V dc, condition A, pulsed (see 4.5.1), ID = rated ID2 (see 1.3) rDS(on)1 0.18 0.40 Ω Ω 0.20 0.49 Ω Ω 1.8 1.4 V dc V dc VGS = 12 V dc, condition A, pulsed (see 4.5.1), ID = rated ID1 (see 1.3) VGS = 0 V dc, ID = rated ID1 pulsed (see 4.5.1) See footnotes at end of table. 8 VGS(th)1 2.0 V dc V dc rDS(on)2 VSD MIL-PRF-19500/614B * TABLE I. Group A inspection - Continued. Inspection 1/ Limits MIL-STD-750 Unit Symbol Method Condition Min Max Subgroup 3 High temperature operation: TA = +125°C Gate current 3411 Bias condition C, VGS = ±20 V dc, VDS = 0 V dc IGSS2 ±200 nA dc Drain current 3413 Bias condition C, VGS = 0 V dc, VDS = 80 percent of rated VDS IDSS3 0.25 nA dc Static drain to source on-state 2N7380 2N7381 3421 VGS = 12 V dc, pulsed (see 4.5.1), ID = rated ID2 0.35 0.75 Ω Ω Gate to source voltage (threshold) 3403 Low temperature operation: VDS ≥ VGS, ID = 1.0 mA dc rDS(on)3 VGS(th)2 1.0 V dc TA = -55°C 3403 VDS ≥ VGS, ID = 1.0 mA dc 3472 ID = rated ID1, VGS = 12 V dc, gate drive impedance = 7.5 Ω, VDD = 50 percent of VBR(DSS) VGS(th)3 5.0 V dc Turn-on delay time Rise time 2N7380 2N7381 td(on) tr 25 ns 60 50 ns ns Turn-off delay time 2N7380 2N7381 td(off) 40 70 ns ns 30 60 ns ns Gate to source voltage (threshold) Subgroup 4 Switching time test Fall time 2N7380 2N7381 tf See footnotes at end of table. 9 MIL-PRF-19500/614B * TABLE I. Group A inspection - Continued. Inspection 1/ Limits MIL-STD-750 Unit Symbol Method Condition Min Max Subgroup 4 - continued Forward transconductance 3475 ID = ID2, VDD = 15 V dc see 4.5.1 3474 See figures 3 and 4; tp = 10 ms, VDS = 80 percent of rated VBR(DSS), VDS = 200 V maximum gfs 2.5 s 40 50 nC nC 10 nC 20 25 nC nC 275 460 ns ns Subgroup 5 Safe operating area test (high voltage) See table I, group A, subgroup 2 Electrical measurements Subgroup 6 Not applicable Subgroup 7 Gate charge 3471 Condition B On-state gate charge 2N7380 2N7381 Qg(on) Gate to source charge Qgs Gate to drain charge 2N7380 2N7381 Qgd Reverse recovery time 3473 di/dt ≤ 100 A/µs, VDD ≤ 50 V, ID = ID1 2N7380 2N7381 1/ 2/ trr For sampling plan, see MIL-PRF-19500. This test is required for the following endpoint measurements only: JANS - group B, subgroup 3 and 4; JANTX and JANTXV - group B, subgroup 2 and 3; group C, subgroup 6; group E, subgroup 1. 10 MIL-PRF-19500/614B TABLE II. Group D inspection. Post-irradiation limits Pre-irradiation limits MIL-STD-750 Inspection Symbol Unit 1/ 2/ 3/ Method Conditions M, D, and R F, G, and H 4/ M, D, and R F, G, and H 4/ Min Subgroup 2 Max Min Max Min Max Min Max TC = +25°C Steady-state total dose irradiation (VGS bias) 5/ 1019 VGS = 12 V VDS = 0 V Steady-state total dose irradiation (VDS bias) 5/ 1019 VGS = 0 V, VDS = 80 percent of rated VDS (preirradiation) End-point electrical: Breakdown voltage, drain to source 2N7380 2N7381 3407 VGS = 0 V, ID = 1 V(BR)DSS mA bias condition C Gate to source voltage 4/ (threshold) 3403 VDS ≥ VGS ID = 1 mA VGSth Gate current 3411 VGS = 20 V VDS = 0 V, bias condition C IGSSF1 100 100 Gate current 3411 VGS = 20 V VDS = 0 V, bias condition C IGSSR1 -100 -100 100 200 2.0 100 200 4.0 See footnotes at end of table. 11 2.0 100 200 4.0 2.0 100 200 4.0 1.25 V dc V dc 4.5 V dc 100 100 nA dc -100 -100 nA dc MIL-PRF-19500/614B *TABLE II. Group D inspection - Continued. Post-irradiation limits Pre-irradiation limits MIL-STD-750 Inspection Symbol Unit 1/ 2/ 3/ Method Conditions M, D, and R F, G, and H 4/ M, D, and R F, G, and H 4/ Min Subgroup 2 - Continued 3405 VGS = 12 V, VDS(ON) Condition A pulsed, see 4.5.1. ID = ID2 Forward voltage source drain diode 4011 VGS = 0 V, ID = ID1, bias condition C 4/ 5/ Max Min Max Min Max IDSS Static drain to source on-state voltage 2N7380 2N7381 1/ 2/ 3/ Min TC = +25°C Drain current 3413 VGS = 0 V Bias condition C VDS = 80 percent of rated VDS (preirradiation) 2N7380 2N7381 2N7380 2N7381 Max 25 25 25 25 25 25 50 50 µA dc µA dc 1.638 2.4 1.638 2.4 1.638 2.4 2.184 3.18 V dc V dc 1.8 1.4 1.8 1.4 1.8 1.4 1.8 1.4 V V VSD For sampling plan, see MIL-PRF-19500. Separate samples shall be pulled for each bias. Group D qualification may be performed anytime prior to lot formation. Wafers qualified to these group D QCI requirements may be used for any other specification sheet utilizing the same die design. The F designation represents devices which pass end-points at both 100K and 300K rads (Si). The G designation represents devices which pass 100K, 300K and 600K rad (Si) end-points. H must meet end points for 300K and 1,000K rad (Si). 12 MIL-PRF-19500/614B TABLE III. Group E inspection (all quality levels) - for qualification only. MIL-STD-750 Inspection Method Conditions Subgroup 1 12 devices, c=0 Temperature cycling 1051 Hermetic seal Fine leak Gross leak 1071 Electrical measurements Test condition G, 500 cycles See table I, group A, subgroup 2 Subgroup 2 1/ Steady-state reverse bias 12 devices, c=0 1042 Electrical measurements Steady-state reverse bias Qualification and large lot quality conformance inspection Condition A, 1,000 hours See table I, group A, subgroup 2 1042 Condition B, 1,000 hours Subgroup 3 Not applicable Subgroup 4 Thermal resistance 12 devices, c=0 3161 See 4.5.2 Subgroup 5 Not applicable 1/ A separate sample for each test may be pulled. 13 MIL-PRF-19500/614B Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) * FIGURE 2. Thermal response curves. 14 0.1 1 MIL-PRF-19500/614B FIGURE 3. Safe operating area graphs. 15 MIL-PRF-19500/614B FIGURE 4. Safe operating area graphs. 16 MIL-PRF-19500/614B 5. PACKAGING * 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. * 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2). c. Packaging requirements (see 5.1). d. Lead finish (see 3.3.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Supersession data. This specification supersedes DESC drawing 89009, dated 19 December 1989. * 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA Preparing activity: DLA - CC (Project 5961-2578) Review activities: Army - AR, SM Navy - AS, MC, OS Air Force - 19 17 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/614B 2. DOCUMENT DATE 22 February 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381 JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99