The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 20 August 1998
INCH-POUND
MIL-PRF-19500/542F
20 April 1998
SUPERSEDING
MIL-S-19500/542E
17 August 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,
SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762,
JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors.
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of
product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (TO-204AA; formerly TO-3), and figures 2, 3, for JANHC and JANKC die dimensions. See 6.5
for unencapsulated device types.
1.3 Maximum ratings. Unless otherwise specified, TA = +25qC.
Type
PT 1/
PT
TC = +25qC
W
TC = +25qC
(free air)
W
V dc
V dc
75
75
75
75
4
4
4
4
100
200
400
500
100
200
400
500
2N6756
2N6758
2N6760
2N6762
Type
IS
IDM
VDS
VDG
TJ and TSTG
VISO
70,000 feet
altitude
3/
2N6756
2N6758
2N6760
2N6762
(R
ΘJC
ID2 2/
TC = +25qC
TC = +100qC
V dc
A dc
A dc
r 20
r 20
r 20
r 20
14.0
9.0
5.5
4.5
9.0
6.0
3.5
3.0
Max rDS(on) 1/
VGS = 10 V dc, ID = ID2
TJ = 25qC
TJ = 150qC
RTJC
max
A dc
A (pk)
qC
ohms
ohms
qC/W
14.0
9.0
5.5
4.5
56
36
22
18
-55 to +150
-55 to +150
-55 to +150
-55 to +150
0.18
0.4
1.0
1.5
0.36
0.84
2.5
3.75
1.67
1.67
1.67
1.67
1/ Derate linearly 0.6 W/qC for TC > +25qC. P =
T
2/
ID1 2/
VGS
TJ max − TC
x RDS ( on) at TJ max
400
500
TJ
max
− TC
RΘJC
)
3/ IDM = 4 ID1; ID1 as calculated in note 2.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/542F
1.4 Primary electrical characteristics. Unless otherwise specified, TC = +25qC.
Min V(BR)DSS
VGS(th)1
Max IDSS1
Max rDS(on)1 1/
VGS = 0 V
VDS t VGS
VGS = 0 V
VGS = 10 V dc
ID = 1 mA dc
ID = 0.25 mA
Type
ID = ID2
VDS = 80 percent
TJ = +25qC
of rated VDS
V dc
2N6756
2N6758
2N6760
2N6762
100
200
400
500
V dc
Min Max
2.0
4.0
2.0
4.0
2.0
4.0
2.0
4.0
PA dc
ohms
25
25
25
25
0.18
0.4
1.0
1.5
1/ Pulsed, (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/542F
Dimensions
Symbol
Inches
Min
CD
Max
Millimeters
Min
.875
Max
22.23
CH
.250
.360
6.35
9.14
HR
.495
.525
12.57
13.34
HR1
.131
.188
3.33
4.78
HT
.060
.135
1.52
3.43
LD
.038
.043
0.97
1.09
LL
.312
.500
7.92
12.70
.050
LL1
Notes
1.27
MHD
.151
.161
3.84
4.09
MHS
1.177
1.197
29.90
30.40
PS
.420
.440
10.67
11.18
3, 5
PS1
.205
.225
5.21
5.72
3, 5
s1
.655
.675
16.64
17.15
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. When
gauge is not used measurement will be made at the seating plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930
inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm)
convex overall.
5. Mounting holes shall be deburred on the seating plane side.
6. Drain is electrically connected to the case.
FIGURE 1. Physical dimensions of transistor (TO-204AA).
3
MIL-PRF-19500/542F
Inch
.016
.018
.019
.025
.026
mm
0.41
0.46
0.48
0.64
0.66
Inch
.031
.033
.034
0.41
.106
mm
0.79
0.84
0.86
1.04
2.69
Inch
.116
.148
.180
.181
mm
2.95
3.76
4.57
4.60
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ".005 inch (0.13 mm).
4. The physical characteristics of the die thickness are .0187 inch (0.475 mm). The back metals are chromium, nickel
and silver. The top metal is aluminum and the back contact is the drain.
FIGURE 2. JANHCA and JANKCA (A-version).
4
MIL-PRF-19500/542F
mm
0.61
0.69
0.89
3.20
4.62
Inch
.024
.027
.035
.126
.182
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ".005 inch (0.13 mm).
4. The physical characteristics are the die thickness .014 inch (0.36 mm). The back metals are aluminum, nickel, and titanium.
The top metal is aluminum and the back contact is the drain.
FIGURE 3. JANHCB and JANKCB (B-version) die dimensions for 2N6756, 2N6758, 2N6760, and 2N6762.
5
MIL-PRF-19500/542F
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.3).
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in
MIL-PRF-19500.
3.3 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 (TO - 204AA) herein.
3.3.1 Internal construction. Multiple chip construction is not permitted to meet the requirements of this specification.
3.3.2 Lead finish. Lead finish shall be solderable as defined in MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead
finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of electrostatic
charge. The following handling practices shall be followed:
a.
Devices shall be handled on benches with conductive handling devices.
b.
Ground test equipment, tools, and personnel handling devices.
c.
Do not handle devices by the leads.
d.
Store devices in conductive foam or carriers.
e.
Avoid use of plastic, rubber, or silk in MOS areas.
f.
Maintain relative humidity above 50 percent if practical.
g.
Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.
h.
Gate must be terminated to source, R d 100 k, whenever bias voltage is to be applied drain to source.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3)
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and table II herein.
6
MIL-PRF-19500/542F
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (Appendix E, table
IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits
of table I herein shall not be acceptable.
Screen (see appendix
E,
table IV of
MIL-PRF-19500)
1/
Measurement
JANS level
JANTX and JANTXV levels
Gate stress test (see 4.5.5)
Gate stress test (see 4.5.5)
Method 3470 (see 4.5.4) optional
Method 3470 (see 4.5.4) optional
1/
Method 3161 (see 4.5.3)
Method 3161 (see 4.5.3)
9
IGSS1, IDSS1
10
Method 1042, test condition B
Method 1042, test condition B
11
IGSS1, IDSS1, rDS(on)1, VGS(th)1
Subgroup 2 of table I herein:
IGSS1, IDSS1, rDS(on)1,
1/ 2/
VGS(th)1, subgroup 2 of table Iherein.
'IGSS1 = r 20 nA dc or r 100 percent of initial value,
whichever is greater.
'IDSS1 = r 25 PA dc or r 100 percent of initial value,
whichever is greater.
12
Method 1042, test condition A, t = 240 hours
Method 1042, test condition A; or
t = 48 hours minimum at +175qC min
13
Subgroups 2 and 3 of table I herein:
Subgroup 2 of table I herein:
'IGSS1 = r 20 nA dc or r 100 percent of initial value,
whichever is greater.
'IGSS1 = r 20 nA dc or r 100 percent of initial
value, whichever is greater.
'IDSS1 = r 25 PA dc or r 100 percent of initial value,
whichever is greater.
'IDSS1 = r 25 PA dc or r 100 percent of initial
value, whichever is greater.
'rDS(on)1 = r 20 percent of initial value.
'VGS(th)1 = r 20 percent of initial value.
'rDS(on)1 = r 20 percent of initial value.
'VGS(th)1 = r 20 percent of initial value.
1/ Shall be performed anytime before screen 10.
2/ This test method in no way implies a repetitive avalanche energy rating. This test need not be performed in group A when
performed as a screen.
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix E, table IV of MIL-PRF-19500. As a
minimum Die, shall be 100 percent probed per group A, subgroup 2 except test current shall not exceed 20 amperes.
4.3.2 JANHC and JANKC die. Qualification shall be in accordance with appendix E, table IV of MIL-PRF-19500.
7
MIL-PRF-19500/542F
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein.
Alternate flow is allowed for conformance inspection in accordance with appendix E of MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500 and
table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
appendix E, table IVa (JANS) and table IVb (JANTX and JANTXV) of MIL-PRF-19500. Electrical measurements (end points) and delta
requirements shall be in accordance with the applicable steps of table I, group A, subgroup 2 herein.
4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B3
1051
Test condition G.
B4
1042
Test condition D; the heating cycle shall be 1 minute minimum, 2,000 cycles. No heat sink nor
forced air cooling on the device shall be permitted during the cycle.
B5
1042
Accelerated steady-state operation life; test condition A, VDS = rated TA = +175qC, t = 120
hours minimum. Read and record V(BR)DSS (pre and post at 1 mA = ID. Read and record I
DSS (pre and post). Deltas for V(BR)DSS shall not exceed 10 percent and IDSS shall not
exceed 25 PA.
Accelerated steady-state gate stress; condition B, VGS = rated, TA = +175qC, t = 24 hours.
B5
2037
Bond strength (Al-Au die interconnects only); test condition A.
B6
3161
See 4.5.2.
4.4.2.2 Group B inspection, appendix E, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Conditions
B2
1051
Test condition G.
B3
1042
Test condition D, 2,000 cycles minimum. The heating cycle shall be 1 minute minimum.
B3
2037
Test condition A. All internal bond wires for each device shall be pulled separately.
B4
2075
See 3.3.2.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
appendix E, table VII of MIL-PRF-19500. Electrical measurements (end points) and delta requirements shall be in accordance with the
applicable steps of table I, group A, subgroup 2 herein.
4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500.
Subgroup
Method
Conditions
C2
1056
Test condition A.
C2
2036
Test condition A; weight = 10 lbs, t = 15 s.
C6
1042
Test condition D; 6,000 cycles minimum. The heating cycle shall be 1 minute minimum.
8
MIL-PRF-19500/542F
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750.
RTJC max = 1.67qC/W.
a. IM measuring current............................................. 10 mA.
b. IH drain heating current ......................................... 1.5 A.
c. tH heating time ....................................................... Steady-state (see MIL-STD-750, method 3161 for definition).
d. VH drain-source heating voltage ............................ 20 V.
e. tMD measurement time delay ................................. 30 to 60 Ps
f. tSW sample window time ........................................ 10 Ps (max).
4.5.3 Thermal response ('VSD measurements). The 'VSD measurements shall be performed in accordance with method 3161 of
MIL-STD-750. The 'VSD conditions (IH and VH) and maximum limit shall be derived by each vendor from the thermal response curves
(see figure 4). The 'VSD measurement and conditions for each device in the qualification lot shall be submitted (read and record) in the
qualification report. The chosen 'VSD shall be considered final after the manufacturer has had the opportunity to test five consecutive
lots. The following parameter measurements shall apply:
a. IM measuring current.................................. 10 mA.
b. IH drain heating current .............................. 1.5 A (min).
c. tH heating time ............................................ 100 ms.
d. VH drain-source heating voltage ................. 20 V (min).
e. tMD measurement time delay ...................... 30 to 60 Ps.
f. tSW sample window time ............................. 10 Ps (max).
4.5.4 Single pulse unclamped inductive switching.
a. Peak current, ID .......................................... Rated ID.
b. Peak gate voltage, VGS .............................. 10 V.
c. Gate to source resistor, RGS ...................... 25 d RGS
d 200.
d. Initial case temperature .............................. +25qC +10, -5qC.
e. Inductance.................................................. 100 PH minimum.
f. Number of pulses to be applied................... 1 pulse minimum.
g. Supply voltage VDD .................................... 50 V.
4.5.5 Gate stress test.
a. VGS = 30 V minimum.
b. t = 250 Ps minimum.
9
MIL-PRF-19500/542F
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 1
Visual and mechanical
inspection
2071
Subgroup 2
Thermal response 2/
3161
See 4.5.3
Breakdown voltage,
drain to source
3407
VGS = 0 V dc
1.6
ZTJC
ID = 1 mA dc, condition C
V dc
V(BR)DSS
2N6756
2N6758
2N6760
2N6762
qC/W
100
200
400
500
VDS t VGS
Gate to source voltage
(threshold)
3404
Gate current
3411
VGS = r 20 V dc, VDS = 0
Bias condition
IGSS1
Drain current
3413
VGS = 0 V dc
IDSS1
VGS(th)1
2.0
4.0
V dc
r 100
nA dc
25
PA dc
ID = 0.25 mA dc
VDS = 80 percent of rated
VDS; Bias condition C
Static drain to source
on-state resistance
3421
VGS = 10 V dc, pulsed
(see 4.5.1); condition A,
ID = rated ID1 (see 1.3)
2N6756
2N6758
2N6760
2N6762
Static drain to source
on-state resistance
ohms
rDS(on)1
0.18
0.4
1.0
1.5
3421
VGS = 10 V dc, pulsed
(see 4.5.1); condition A,
ID = rated ID1 (see 1.3)
2N6756
2N6758
2N6760
2N6762
ohms
rDS(on)2
.21
.49
1.22
1.80
See footnotes at end of table.
10
MIL-PRF-19500/542F
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 2 - Continued
Forward voltage (source
drain diode)
4011
Pulsed (see 4.5.1)
VGS = 0 V, ID = ID1
V
VSD
2N6756
2N6758
2N6760
2N6762
1.8
1.6
1.5
1.4
Subgroup 3
TC = TJ = +125qC
High temperature
operation:
Gate current
3411
IGSS2
r 200
nA dc
VDS = 100 percent of rated VDS
IDSS2
1.0
mA dc
VDS = 80 percent of rated VDS
IDSS3
0.25
mA dc
Bias condition C
VGS = r 20 V dc
VDS = 0 V dc
Drain current
Static drain to source
on-state resistance
3413
3421
Bias condition C
VGS = 0 V dc
VGS = 10 V dc pulsed
ohms
rDS(on)3
(see 4.5.1); ID = rated ID2
2N6756
2N6758
2N6760
2N6762
Gate to source
voltage (threshold)
0.34
0.8
2.2
3.3
3403
VGS(th)2
1.0
V dc
ID = 0.25 mA dc
TC = TJ = -55qC
Low temperature
operation:
Gate to source voltage
threshold
VDS t VGS
3403
VDS t VGS
VGS(th)3
ID = 0.25 mA dc
See footnotes at end of table.
11
5.0
V dc
MIL-PRF-19500/542F
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 4
Switching time test
3472
ID = rated ID1; VGS = 10 V dc
Gate drive impedance = 7.5:
VDD = 50 percent of VBR(DSS)
Turn-on delay time
35
30
2N6756, 2N6758
2N6760, 2N6762
Rise time
80
40
Turn-off delay time
60
80
Fall time
ns
tf
45
40
35
30
2N6756
2N6758
2N6760
2N6762
Subgroup 5
3474
See figure 5; VDS = 80 percent of
rated VBR(DSS)
VDS = 200 V max; tp = 10 ms
Electrical measurements
Electrical measurements
ns
td(off)
2N6756, 2N6758
2N6760, 2N6762
Single pulse unclamped
inductive switching
ns
tr
2N6756, 2N6758
2N6760, 2N6762
Safe operating area test
ns
td(on)
See table I, group A, subgroup 2
3470
See 4.5.4, c = 0, 116 devices
See table I, group A, subgroup 2
Subgroup 6
Not applicable
See footnotes at end of table.
12
MIL-PRF-19500/542F
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 7
3471
Gate charge
Condition B
On-state charge
nC
Qg(on)
35
39
39
40
2N6756
2N6758
2N6760
2N6762
Gate to source charge
10
5.7
6.0
2N6756
2N6758
2N6760, 2N6762
Gate to drain charge
nC
Qgd
15
20
2N6756
2N6758, 2N6760, 2N6762
Reverse recovery time
nC
Qgs
3473
di/dt = 100 A/Ps
VDD d 30 V
ns
trr
ID = ID1
300
500
700
900
2N6756
2N6758
2N6760
2N6762
1/ For sampling plan, see MIL-PRF-19500.
2/ This test is required for the following end points (not intended for Screen 13):
JANS - group B, subgroups 3 and 4
JANTX and JANTXV - Group B, subgroups 2 and 3
Group C, subgroup 6
Group E, subgroup 1
13
MIL-PRF-19500/542F
TABLE II. Group E inspection (all quality levels) for qualification only.
MIL-STD-750
Inspection 1/
Method
Conditions
45 devices
c=1
Subgroup 1
Temperature cycle
Qualification and
large lot quality
conformance
inspection 1/
1051
Condition G, 500 cycles
Hermetic seal
Fine leak
Gross leak
Electrical measurements
See table I, group A, subgroup 2
45 devices
c=1
Subgroup 2 2/
Steady-state reverse
bias
1042
Electrical measurements
Steady-state gate bias
Condition A, 1,000 hours
See table I, group A, subgroup 2
4042
Electrical measurements
Condition B, 1,000 hours
See table I, group A, subgroup 2
Subgroup 3
Not applicable
5 devices
c=0
Subgroup 4
Thermal resistance
3161
RTJC = 1.67qC/W max.
See 4.5.2
5 devices
c=0
Subgroup 5
Barometric pressure
(reduced)
400 and 500 V only
1001
Test condition C
VISO = VDS
I(ISO) = .25 mA (max)
1/ JANHC and JANKC devices are qualified in accordance with appendix G of MIL-PRF-19500.
2/ A separate sample for each test may be pulled.
14
MIL-PRF-19500/542F
FIGURE 4. Thermal response curves.
15
MIL-PRF-19500/542F
FIGURE 5. Safe operating area.
16
MIL-PRF-19500/542F
FIGURE 5. Safe operating area - Continued.
17
MIL-PRF-19500/542F
FIGURE 5. Safe operating area - Continued.
18
MIL-PRF-19500/542F
FIGURE 5. Safe operating area - Continued.
19
MIL-PRF-19500/542F
5. PACKAGING
5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental
to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible
packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points'
packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging
data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or
by contacting the responsible packaging activity.
5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-PRF-19500.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. See MIL- PRF-19500.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000.
6.4 Substitution information. Devices covered by this specification are substitutable for the manufacturers' and users' Part or
Identifying Number (PIN). This information in no way implies that manufacturers' PIN's are suitable as a substitute for the military PIN.
PIN
Manufacturer’s
CAGE code
Manufacturer’s and user’s PIN
2N6756
17856, 59993, 18722, 04713
IRF130
2N6758
17856, 59993, 18722, 04713
IRF230
2N6760
17856, 59993, 18722, 04713
IRF330
2N6762
17856, 59993, 18722, 04713
IRF430
6.5 Replacement data. JANTX devices shall be a direct replacement for JAN devices (example: JANTX2N6756 for JAN2N6756).
20
MIL-PRF-19500/542F
6.6 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example JANHCA2N6756) will
be identified on the QPL.
JANC ordering information
PIN
Manufacturers
59993
18722
2N6756
JANHCA6756
JANKCA6756
JANHCB6756
JANKCB6756
2B6758
JANHCA6758
JANKCA6758
JANHCB6758
JANKCB6758
2N6760
JANHCA6760
JANKCA6760
JANHCB6760
JANKCB6760
2N6762
JANHCA6762
JANKCA6762
JANHCB6762
JANKCB6762
6.7 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extensiveness of the changes.
Custodians:
Army - CR
Navy - EC
Air Force - 17
NASA - NA
Preparing activity:
DLA - CC
(Project 5961-1975)
Review activities:
Navy - TD
Air Force - 19, 70, 80
21
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/542F
2. DOCUMENT DATE (YYMMDD)
980420
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762 JAN, JANTX,
JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
Commercial
DSN
FAX
EMAIL
7. DATE SUBMITTED
(YYMMDD)
8. PREPARING ACTIVITY
a. Point of contact: Alan Barone
c. ADDRESS:
Defense Supply Center Columbus, ATTN:
DSCC-VAT, 3990 East Broad Street, Columbus,
OH 43216-5000
DD Form 1426, OCT 89
b. TELEPHONE
Commercial
DSN
614-692-0510
850-0510
FAX
614-692-6939
EMAIL
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Quality and Standardization Office
5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466
Telephone (703) 756-2340 DSN 289-2340
Previous editions are obsolete
198/290