Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SC-75A or SC-89 G Ordering Information: 1 3 S D SC-75A (SOT– 416): Si1012R–Marking Code : C SC-89 (SOT– 490): Si1012X–Marking Code: A 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "6 Continuous Drain Current (TJ = 150_C) _ b TA = 25_C Maximum Power Dissipationb for SC-75 Maximum Power Dissipationb 400 IS Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) 350 250 TA = 25_C 175 150 TA = 85_C 90 80 275 250 160 140 PD TA = 85_C mA 1000 275 TA = 25_C for SC-89 500 600 IDM Continuous Source Current (diode conduction)b V ID TA = 85_C Pulsed Drain Currenta Unit mW TJ, Tstg –55 to 150 _C ESD 2000 V Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board. Document Number: 71166 S-02464—Rev. A, 25-Oct-00 www.vishay.com 1 Si1012R/X New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward VDS = 0 V, VGS = "4.5 V VDS = 16 V, VGS = 0 V Voltagea "0.5 "1.0 mA 0.3 100 nA mA 5 VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V 700 mA VGS = 4.5 V, ID = 600 mA 0.41 0.70 VGS = 2.5 V, ID = 500 m A 0.53 0.85 VGS = 1.8 V, ID = 350 m A 0.70 1.25 gfs VDS = 10 V, ID = 400 mA 1.0 VSD IS = 150 mA, VGS = 0 V 0.8 rDS(on) Forward Transconductancea V W S 1.2 V Dynamicb Total Gate Charge Qg 750 VDS = 10 V, VGS = 4.5 V, ID = 250 mA Gate-Source Charge Qgs Gate-Drain Charge Qgd 225 Turn-On Delay Time td(on) 5 Rise Time tr Turn-Off Delay Time Fall Time 5 VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W td(off) pC 75 ns 25 tf 11 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.0 1200 TC = –55_C 1000 VGS = 5 thru 1.8 V ID - Drain Current (mA) I D – Drain Current (A) 0.8 0.6 0.4 0.2 25_C 800 125_C 600 400 200 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) Document Number: 71166 S-02464—Rev. A, 25-Oct-00 Si1012R/X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Capacitance 100 3.2 80 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) On-Resistance vs. Drain Current 4.0 2.4 1.6 VGS = 1.8 V 0.8 Ciss 60 40 Coss 20 VGS = 2.5 V VGS = 4.5 V 0.0 Crss 0 0 200 400 600 800 1000 0 4 ID – Drain Current (mA) 12 16 20 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.60 VDS = 10 V ID = 250 mA r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 8 4 3 2 1 1.40 VGS = 4.5 V ID = 600 mA 1.20 VGS = 1.8 V ID = 350 mA 1.00 0.80 0 0.0 0.2 0.4 0.6 0.60 –50 0.8 –25 Qg – Total Gate Charge (nC) 0 25 50 75 100 125 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 1000 r DS(on) – On-Resistance ( W ) I S – Source Current (mA) TJ = 125_C 100 TJ = 25_C TJ = –55_C 10 1 0.0 4 ID = 350 mA 3 ID = 200 mA 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71166 S-02464—Rev. A, 25-Oct-00 1.2 1.4 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si1012R/X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) IGSS vs. Temperature 3.0 0.2 2.5 ID = 0.25 mA 0.1 2.0 IGSS – (mA) V GS(th) Variance (V) Threshold Voltage Variance vs. Temperature 0.3 –0.0 1.5 –0.1 1.0 –0.2 0.5 VGS = 4.5 V –0.3 –50 –25 0 25 50 75 100 0.0 –50 125 –25 0 TJ – Temperature (_C) 25 50 75 100 125 TJ – Temperature (_C) BVGSS – Gate-to-Source Breakdown Voltage (V) BVGSS vs. Temperature 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 833_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71166 S-02464—Rev. A, 25-Oct-00 Si1012R/X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71166 S-02464—Rev. A, 25-Oct-00 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5