DYNEX GP800DDS12

GP800DDS12
GP800DDS12
Powerline N-Channel Dual Switch IGBT Module
Replaces October 1999 version, DS5172-3.0
DS5172-4.0 January 2000
The GP800DDS12 is a dual switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
KEY PARAMETERS
1200V
(typ)
2.7V
(max)
800A
(max)
1600A
VCES
VCE(sat)
IC
IC(PK)
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
5
6
3
1
4
2
7
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
8
9
12
11
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
10
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
Outline type code: D
FEATURES
■
n - Channel
■
Enhancement Mode
■
High Input Impedance
■
Optimised For High Power High Frequency Operation
■
Isolated Base
■
Full 1200V Capability
■
800A Per Arm
(See package details for further information)
Fig. 1 Electrical connections - (not to scale)
11(G2)
12(C2)
4(E2)
2(C2)
10(E2)
3(C1)
1(E1)
1
7(C )
5(E1)
6(G1)
Fig.2 Dual switch circuit diagram
APPLICATIONS
ORDERING INFORMATION
■
High Power Switching
Order As: GP800DDS12
■
Motor Control
Note: When ordering, please use the whole part number.
■
Inverters
■
Traction Systems
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
GP800DDS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Collector current
IC(PK)
Test Conditions
Max.
Units
1200
V
±20
V
DC, Tcase = 25˚C
1050
A
DC, Tcase = 75˚C
800
A
1ms, Tcase = 75˚C
1600
A
VGE = 0V
-
Pmax
Maximum power dissipation
Tcase = 25˚C (Transistor)
6000
W
Visol
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
2500
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-c)
Thermal resistance - transistor (per arm)
DC junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
DC junction to case
Rth(c-h)
Thermal resistance - Case to heatsink
(per module)
Junction temperature
Tj
Tstg
-
Max. Units
-
21
o
-
40
o
Mounting torque 5Nm
(with mounting grease)
-
8
o
Transistor
-
150
o
Diode
-
125
o
–40
125
o
Mounting - M6
-
5
Nm
Electrical connections - M4
-
2
Nm
Electrical connections - M8
-
10
Nm
Storage temperature range
Screw torque
Min.
Conditions
-
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/11
C/kW
C/kW
C/kW
C
C
C
GP800DDS12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
50
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
±4
µA
VGE(TH)
Gate threshold voltage
IC = 120mA, VGE = VCE
4
-
7.5
V
2.7
3.5
V
Collector-emitter saturation voltage
VGE = 15V, IC =800A
-
VCE(SAT)
VGE = 15V, IC = 800A, Tcase = 125˚C
-
3.2
4.0
V
ICES
Parameter
Collector cut-off current
IGES
Conditions
IF
Diode forward current
DC
-
-
800
A
IFM
Diode maximum forward current
tp = 1ms
-
-
1600
A
VF
Diode forward voltage
IF = 800A
-
2.2
2.4
V
IF = 800A, Tcase = 125˚C
-
2.3
2.5
V
VCE = 25V, VGE = 0V, f = 1MHz
-
90
-
nF
-
20
-
nH
Cies
Input capacitance
LM
Module inductance
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
GP800DDS12
INDUCTIVE SWITCHING CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
Parameter
Conditions
Turn-off delay time
Fall time
EOFF
Turn-off energy loss
IC = 800A
VGE = ±15V
td(on)
Turn-on delay time
VCE = 600V
RG(ON) = RG(OFF) = 3.3Ω
tr
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Qrr
Diode reverse recovery charge
L ~ 100nH
IF = 800A
VR = 50%VCES,
dIF/dt = 2000A/µs
Min.
Typ.
Max.
Units
-
1100
1300
ns
-
150
200
ns
-
130
170
mJ
-
800
900
ns
-
320
400
ns
-
90
130
mJ
-
150
200
µC
-
170
-
µC
-
1300
1500
ns
-
200
250
ns
-
170
250
mJ
-
950
1200
ns
-
350
450
ns
-
150
200
mJ
-
200
260
µC
-
225
-
µC
Tcase = 125˚C unless stated otherwise.
td(off)
tf
Turn-off delay time
Fall time
EOFF
Turn-off energy loss
IC = 800A
VGE = ±15V
td(on)
Turn-on delay time
VCE = 600V
RG(ON) = RG(OFF) = 3.3Ω
tr
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Qrr
Diode reverse recovery charge
L ~ 100nH
IF = 800A
VR = 50%VCES,
dIF/dt = 2000A/µs
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/11
GP800DDS12
SWITCHING DEFINITIONS
+15V
Vge
10%
0V
-15V
t 4 + 5µs
Eon =
∫V
.I dt
ce c
IC
90%
t1
td(on) = t2 - t1
10%
tr = t3 - t2
Vce
t1
t2
t4
t3
Fig.3 Definition of turn-on switching times
+15V
90%
0V
Vge
-15V
t 7 + 5µs
Eoff =
∫V
.I dt
ce c
t5
90%
td(off) = t6 - t5
IC
10%
tf = t7 - t6
Vce
t5
t6
t7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
GP800DDS12
CURVES
Vge = 20/15/12/10V
Vge = 20/15/12/10V
1600
1400
1600
Common emitter
Tcase = 25˚C
1400
1200
Collector current, IC - (A)
Collector current, IC - (A)
1200
1000
800
600
1000
800
600
400
400
200
200
0
0
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
0
0
5.0
Fig.5 Typical output characteristics
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
5.0
Fig.6 Typical output characteristics
220
160
Conditions:
Tcase = 25˚C,
VCE = 600V,
VGE = ±15V
140
Conditions:
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
200
A
180
120
A
160
Turn-on energy, Eon - (mJ)
Turn-on energy, Eon - (mJ)
Common emitter
Tcase = 125˚C
B
B
140
100
C
120
80
C
100
60
40
80
60
40
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
0
0
0
100
200
300
400
500
600
Collector current, IC - (A)
700
Fig.7 Typical turn-on energy vs collector current
800
0
100
200
300
400
500 600
Collector current, IC - (A)
700
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
6/11
800
GP800DDS12
180
250
Conditions:
Tcase = 25˚C,
VCE = 600V,
VGE = ±15V
160
A
200
140
B
Turn-off energy, Eoff - (mJ)
Turn-off energy, Eoff - (mJ)
Conditions:
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
120
C
100
80
60
40
100
200
300
400
500
600
Collector current, IC - (A)
700
0
800
0
Conditions:
VCE = 600V,
VGE = 15V,
Rg = 3.3Ω
100
200
300
400
500
600
Collector current, IC - (A)
700
800
Fig.10 Typical turn-off energy vs collector current
2000
Conditions:
Tcase = 125˚C,
VCE = 600V
VGE = 15V
Rg = 3.3Ω
1800
Tcase = 125˚C
td(off)
1600
50
tf
1400
Switching times, ts - (ns)
Diode turn-off energy, Eoff(Diode) - (mJ)
100
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
Fig.9 Typical turn-off energy vs collector current
60
C
50
0
70
B
150
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
0
A
1200
40
1000
Tcase = 25˚C
30
20
td(on)
800
600
400
10
200
tr
0
0
0
200
400
600
Collector current, IC (A)
800
Fig.11 Typical diode reverse recovery charge vs collector current
0
100
200
300
400
500
600
Collector currrent, IC - (A)
700
800
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
GP800DDS12
1600
2000
1400
1800
1600
Tj = 25˚C
Collector current, IC - (A)
Forward current, IF - (A)
1200
Tj = 125˚C
1000
1400
1200
800
1000
600
800
600
400
400
200
200
0
0
0.5
1
1.5
2
2.5
Forward voltage, VF - (V)
3
0
0
3.5
Fig.13 Diode typical forward characteristics
200
1000
600
400
800
Collector-emitter voltage, Vce - (V)
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
IC max. (single pulse)
1000
µs
50
IC
1m
s
=
0µ
10
tp
s
.D
ax
m
C
100
on
(c
uo
tin
)
us
10
Diode
Transistor
10
1
0.1
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig.15 Forward bias safe operating area
10000
1
10
100
Pulse width, tp - (ms)
1000
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
8/11
1200
Fig.14 Reverse bias safe operating area
10000
Collector current, IC - (A)
Tcase = 125˚C
Vge = ±15V
Rg = 3.3Ω*
*Recommended minimum value
10000
GP800DDS12
2000
1200
1800
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
1000
1400
Collector current, IC - (A)
Inverter phase current, IC(PK) - (A)
1600
1200
1000
800
600
800
600
400
400
Conditions:
200 Tj = 125°C, Tc = 75°C,
Rg = 3.3Ω, VCC = 600V
0
1
10
fmax - (kHz)
Fig.17 3-Phase inverter operating frequency
200
50
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
Fig.18 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/11
GP800DDS12
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
62
62
13
15
15
5
1
4
2
11.85
3
57
24
65
6
16
7
9
13
26
12
43.3
57
65
18
8
11
10
14 11.5
20
35
6x Ø7
4x M8
38
28
31.5
6x M4
5
140
Nominal weight: 1600g
Module outline type code: D
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
IGBT ratings and characteristics
AN4503
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
Driving high power IGBTs with concept gate drivers
AN5167
AN5190
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
10/11
GP800DDS12
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5172-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
11/11