PHILIPS BLT94

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLT94
UHF power transistor
Product specification
Supersedes data of 1997 Nov 04
1998 Jan 28
Philips Semiconductors
Product specification
UHF power transistor
BLT94
FEATURES
PINNING
• Emitter ballasting resistors for an optimum
temperature profile
PIN
DESCRIPTION
1, 4, 5, 8
• Gold metallization ensures excellent reliability.
emitter
2, 3
base
6, 7
collector
APPLICATIONS
• Common emitter class-AB and B operation in portable
radio transmitters in the 900 MHz communication band.
handbook, halfpage
8
5
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a ceramic SOT409A package.
1
Top view
4
MBK150
Fig.1 Simplified outline SOT409A.
QUICK REFERENCE DATA
RF performance at Tmb ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
CW, class-AB
1998 Jan 28
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
900
7.5
6
≥8
≥50
typ. 10
typ. 60
2
Philips Semiconductors
Product specification
UHF power transistor
BLT94
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
2.5
A
Ptot
total power dissipation
Tmb ≤ 60 °C
−
13
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Tmb ≤ 60 °C; Ptot = 13 W
thermal resistance from junction to
mounting base
Rth j-mb
MGM525
10
handbook, halfpage
IC
(A)
1
10−1
1
10
VCE (V)
102
Tmb = 60 °C.
Fig.2 DC SOAR.
1998 Jan 28
3
VALUE
UNIT
8
K/W
Philips Semiconductors
Product specification
UHF power transistor
BLT94
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
collector-base breakdown voltage
MIN.
open emitter; IC = 20 mA
TYP.
MAX.
UNIT
20
−
−
V
V(BR)CEO
collector-emitter breakdown voltage open base; IC = 40 mA
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 4 mA
3
−
−
V
ICES
collector leakage current
VBE = 0; VCE = 7.5 V
−
−
1
mA
25
hFE
DC current gain
IC = 1.2 A; VCE = 5 V
−
−
Cc
collector capacitance
IE = ie = 0; VCB = 7.5 V; f = 1 MHz −
24
−
pF
Cre
feedback capacitance
IC = 0; VCE = 7.5 V; f = 1 MHz
−
17
−
pF
MGM526
MGM527
100
50
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
80
40
60
30
40
20
20
10
0
0
0.4
0
0.8
1.2
1.6
IC (A)
2.0
0
VCE = 5 V; Tj = 25 °C.
Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001.
Fig.3
8
12
16
20
VCB(V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
DC current gain as a function of collector
current; typical values.
1998 Jan 28
4
Fig.4
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT94
APPLICATION INFORMATION
RF performance at Tmb ≤ 60 °C in a common emitter test circuit (see Fig.7).
MODE OF OPERATION
CW, class-AB
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
900
7.5
50
6
≥8
≥50
typ. 10
typ. 55
Ruggedness in class-AB operation
The BLT94 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-AB operation; VCE = 9 V; PL = 6 W and f = 900 MHz; Tmb ≤ 60 °C.
MBK387
14
handbook,
G halfpage
70
p
(dB)
handbook, halfpage
PL
(W)
(%)
12
60
ηC
MBK388
10
ηC
8
10
50
8
6
40
Gp
6
30
4
20
2
10
4
2
0
0
0
2
4
6
8
PL (W)
0
10
0
Power gain and collector efficiency as
functions of load power; typical values.
1998 Jan 28
0.8
1.2
PD (W)
1.6
CW, class-AB operation; VCE = 7.5 V; ICQ = 50 mA;
f = 900 MHz; Tmb ≤ 60 °C.
CW, class-AB operation; VCE = 7.5 V; ICQ = 50 mA;
f = 900 MHz; Tmb ≤ 60 °C.
Fig.5
0.4
Fig.6
5
Load power as a function of drive power;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT94
Test circuit information
VBE
handbook, full pagewidth
C13
VCE
C6
C5
C7
C8
L4
R1
L5
L6
L3
L1
input
50 Ω
C3
C2
C11
L8
output
50 Ω
L2
DUT
C1
L7
C9
C10
C12
C4
MGM531
Fig.7 Common emitter test circuit for class-AB operation at f = 900 MHz.
1998 Jan 28
6
Philips Semiconductors
Product specification
UHF power transistor
BLT94
List of components used in test circuit (see Figs 7 and 8).
COMPONENT
DESCRIPTION
VALUE
C1, C2
multilayer ceramic chip capacitor; note 1
2.7 pF
C3
multilayer ceramic chip capacitor; note 1
82 pF
C4
multilayer ceramic chip capacitor; note 1
15 pF
C5
multilayer ceramic chip capacitor
1 nF
C6
multilayer ceramic chip capacitor; note 1
100 pF
C7
multilayer ceramic chip capacitor
39 nF
DIMENSIONS
C8
electrolytic capacitor
4.7 µF, 10 V
C9, C10
multilayer ceramic chip capacitor; note 1
6.8 pF
C11
multilayer ceramic chip capacitor; note 1
4.3 pF
C12
multilayer ceramic chip capacitor; note 1
0.7 pF
C13
electrolytic capacitor
10 µF, 10 V
L1
stripline; note 2
50 Ω
3.17 x 2.28 mm
L2
stripline; note 2
50 Ω
11 x 2.28 mm
L3
5 turns 0.5 mm enamelled copper wire
L4
chipbead
L5
2 turns 1 mm enamelled copper wire
L6
stripline; note 2
50 Ω
3.82 x 2.28 mm
L7
stripline; note 2
50 Ω
6.18 x 2.28 mm
L8
stripline; note 2
50 Ω
5.62 x 2.28 mm
R1
SMD resistor
27 Ω
CATALOGUE No.
int. dia. = 3 mm
leads = 2 x 7.5 mm
1µH
int. dia. = 6 mm;
leads = 2 x 7.5 mm
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed circuit board, with DUROID dielectric (εr = 2.2);
thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm.
1998 Jan 28
7
Philips Semiconductors
Product specification
UHF power transistor
BLT94
55.9
handbook, full pagewidth
30.9
VBE
C5
VCE
R1
+
C8 +
L4
C6
C7
C13
L5
L3
C11
C3
L1
C1 C2
BLT94
L2
C4
L6
L7
C9 C10
L8
C12
MGM532
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component layout for 900 MHz class-AB test circuit in Fig.7.
1998 Jan 28
8
Philips Semiconductors
Product specification
UHF power transistor
BLT94
MGM528
MGM529
6
6
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
4
4
RL
ri
2
2
0
0
xi
−2
700
800
XL
900
f (MHz)
−2
700
1000
800
900
f (MHz)
1000
CW, class-AB operation; VCE = 7.58 V; ICQ = 50 mA;
PL = 6 W; Tmb ≤ 60 °C.
CW, class-AB operation; VCE = 7.5 V; ICQ = 50 mA;
PL = 6 W; Tmb ≤ 60 °C.
Fig.9
Fig.10 Load impedance as a function of frequency
(series components); typical values.
Input impedance as a function of frequency
(series components); typical values.
MGM530
16
handbook, halfpage
Gp
(dB)
12
ndbook, halfpage
8
Zi
4
0
700
ZL
800
900
f (MHz)
MBA451
1000
CW, class-AB operation; VCE = 7.5 V; ICQ = 50 mA;
PL = 6 W; Tmb ≤ 60 °C.
Fig.11 Power gain as a function of frequency
(series components); typical values.
1998 Jan 28
Fig.12 Definition of transistor impedance.
9
Philips Semiconductors
Product specification
UHF power transistor
BLT94
MOUNTING RECOMMENDATIONS
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.
full pagewidth
1.87 (2×)
0.60 (4×)
0.80 (2×)
0.50 (12×)
7.38 3.60
1.00 (8×)
1.00 (9×)
4.60
MGK390
Dimensions in mm.
Fig.13 Reflow soldering footprint for SOT409A.
1998 Jan 28
10
Philips Semiconductors
Product specification
UHF power transistor
BLT94
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads
SOT409A
D
A
D2
B
c
w2 B
H1
8
5
L
E2
H
E
A
1
4
e
α
w1
b
Q1
0
2.5
5 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
E
E2
e
H
H1
L
Q1
w1
w2
α
mm
2.36
2.06
0.58
0.43
0.23
0.18
5.94
5.03
5.16
5.00
4.93
4.01
4.14
3.99
1.27
7.47
7.26
4.39
4.24
1.02
0.51
0.10
0.00
0.25
0.25
7°
0°
inches
0.093
0.081
0.023
0.017
0.009
0.007
0.234
0.198
0.203
0.197
0.194
0.158
0.163
0.157
0.050
0.294
0.286
0.173
0.167
0.040
0.020
0.004
0.000
0.010
0.010
7°
0°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
98-01-27
SOT409A
1998 Jan 28
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
UHF power transistor
BLT94
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 28
12
Philips Semiconductors
Product specification
UHF power transistor
BLT94
NOTES
1998 Jan 28
13
Philips Semiconductors
Product specification
UHF power transistor
BLT94
NOTES
1998 Jan 28
14
Philips Semiconductors
Product specification
UHF power transistor
BLT94
NOTES
1998 Jan 28
15
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© Philips Electronics N.V. 1998
SCA57
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Printed in The Netherlands
125108/00/03/pp16
Date of release: 1998 Jan 28
Document order number:
9397 750 03235