DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor Product specification Supersedes data of 1996 Nov 04 1999 Jun 25 Philips Semiconductors Product specification UHF power transistor BLV909 FEATURES PINNING - SOT409B • Emitter ballasting resistors for optimum temperature profile PIN • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits. SYMBOL DESCRIPTION 1, 4, 5, 8 e emitter 2, 3 b base 6, 7 c collector APPLICATIONS • Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range. 8 handbook, halfpage 5 c b DESCRIPTION e 1 NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base. 4 MSA467 Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) dim (dBc) CW, class-AB 960 26 9 ≥9.5 ≥50 − 2-tone, class-AB f1 = 960; f2 = 960.1 26 9 (PEP) ≥9.5 ≥35 typ. −30 1999 Jun 25 2 Philips Semiconductors Product specification UHF power transistor BLV909 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 70 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 1.5 A IC(AV) average collector current − 1.5 A Ptot total power dissipation − 29 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tmb = 25 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS VALUE UNIT Ptot = 29 W; Tmb = 25 °C; note 1 6 K/W Note to the Limiting values and Thermal characteristics 1. Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering section, Handbook SC19a.” MGD273 50 MGG301 10 handbook, halfpage handbook, halfpage Ptot (W) 40 IC (A) (1) 30 1 (2) 20 10 0 10−1 1 10 VCE (V) 0 102 80 120 160 Tmb (oC) (1) Short-time operation during mismatch. (2) Continuous operation. Tmb = 25 °C. Fig.2 DC SOAR. 1999 Jun 25 40 Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF power transistor BLV909 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)CBO collector-base breakdown voltage open emitter; IC = 5 mA MIN. TYP. MAX. UNIT 70 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 15 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.3 mA 3 − − V ICES collector leakage current VCE = 28 V; VBE = 0 − − 0.75 mA hFE DC current gain VCE = 10 V; IC = 500 mA 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz − 10 − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − 6 − pF MGD274 MGG302 60 100 handbook, halfpage handbook, halfpage hFE C (pF) 80 (1) 40 60 (2) 40 20 Cc 20 Cre 0 0 0 1 2 IC (A) (1) VCE = 26 V; tp = 500 µs; δ ≤ 1 %. (2) VCE = 10 V. DC current gain as a function of collector current; typical values. 1999 Jun 25 20 30 50 40 VCB (V) f = 1 MHz. Fig.5 Fig.4 10 0 3 4 Collector and feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLV909 APPLICATION INFORMATION RF performance at Tmb = 25 °C in a common emitter test circuit (see Figs 12 and 13). MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) dim (dBc) CW, class-AB 960 26 25 9 ≥9.5, typ. 11.5 ≥50, typ. 55 − 2-tone, class-AB f1 = 960; f2 = 960.1 26 25 9 (PEP) ≥9.5, typ. 11.5 ≥35, typ. 40 typ. −30 Ruggedness in class-AB operation The BLV909 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 960 MHz; VCE = 26 V; ICQ = 25 mA; Tmb = 25 °C. MGG304 16 handbook, halfpage Gp (dB) 80 ηC (%) Gp PL (W) 60 12 8 40 8 4 20 4 12 MGG303 16 handbook, halfpage ηC 0 0 4 8 PL (W) 0 12 0 0 0.4 0.8 1.6 PD (W) VCE = 26 V; ICQ = 25 mA; f = 960 MHz. VCE = 26 V; ICQ = 25 mA; f = 960 MHz. Fig.6 Fig.7 Power gain and collector efficiency as functions of load power; typical values. 1999 Jun 25 1.2 5 Load power as a function of drive power; typical values. Philips Semiconductors Product specification UHF power transistor BLV909 MGG305 12 MGG306 16 handbook, halfpage handbook, halfpage 80 ηC (%) Gp (dB) PL (PEP) (W) 60 12 Gp 8 40 8 ηC 4 20 4 0 10 0 0 0 0.2 0.4 0.6 0 1.8 2 4 PD (PEP) (W) 6 8 PL (PEP) (W) VCE = 26 V; ICQ = 25 mA; f1 = 960 MHz; f2 = 960.1 MHz. VCE = 26 V; ICQ = 25 mA; f1 = 960 MHz; f2 = 960.1 MHz. Fig.8 Fig.9 Peak envelope load power as a function of drive power; typical values. MGG307 −20 Power gain and efficiency as functions of peak envelope load power; typical values. MGG308 −20 handbook, halfpage handbook, halfpage d3 (dBc) dim (dBc) −30 −30 ICQ = 25 mA d3 60 mA 40 mA −40 d5 −40 d7 10 mA −50 −50 0 4 8 12 0 PL (PEP) (W) 8 12 PL (PEP) (W) VCE = 26 V; f1 = 960 MHz; f2 = 960.1 MHz. VCE = 26 V; ICQ = 25 mA; f1 = 960 MHz; f2 = 960.1 MHz. Fig.10 Third order intermodulation distortion as a function of peak envelope load power; typical values. 1999 Jun 25 4 Fig.11 Intermodulation distortion as a function of peak envelope load power; typical values. 6 Philips Semiconductors Product specification UHF power transistor BLV909 Test circuit information handbook, full pagewidth C3 +Vbias R1 , ,,,,, ,,,,, ,,,,, L6 C4 C5 L5 C1 RF in L1 C6 +VS C7 C2 L3 , ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, C10 L12 C16 C15 C14 C13 C12 C11 L11 L8 L10 L9 L7 L2 L4 R2 DUT C9 RF out C8 MBH092 Fig.12 Common emitter test circuit for class-AB operation at 900-960 MHz. Mounting recommendations Both the metallized rear side and the leads of the device contribute to the heat flow. For the best results, it is recommended to mount the transistor on a grounded metallized area on the printed-circuit board, which is equipped with a large number of through metallized holes filled with solder. When the heatsink is mounted to the rear side of the printed-circuit board by means of heatsink compound, a thermal resistance between the mounting base and the heatsink of 0.9 K/W can be achieved. 1999 Jun 25 7 Philips Semiconductors Product specification UHF power transistor BLV909 List of components used in test circuit (see Figs 12 and 13) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C9 multilayer ceramic chip capacitor; note 1 24 pF C2 multilayer ceramic chip capacitor; notes 1 and 2 5.6 pF C3, C7, C10, C16 multilayer ceramic chip capacitor; note 3 110 pF C4, C15 multilayer ceramic chip capacitor; note 3 200 pF C5, C11 tantalum SMD capacitor 10 µF, 35 V C6, C12, C13, C14 ceramic chip capacitor 100 nF C8 multilayer ceramic chip capacitor; note 1 8.2 pF L1 stripline; note 4 24.3 Ω length 9.85 mm width 2 mm L2 stripline; note 4 37.5 Ω length 3.63 mm width 1 mm L3 stripline; note 4 5.11 Ω length 4.1 mm width 13.3 mm L4 stripline; note 4 24.3 Ω length 2 mm width 2 mm L5 RF choke 0.22 µH CATALOGUE No. 2222 852 47104 L6, L12 grade 4S2 ferroxcube chip-bead L7 stripline; note 4 24.3 Ω length 9.2 mm width 2 mm L8 stripline; note 4 3.2 Ω length 3.1 mm width 22 mm L9 stripline; note 4 29.4 Ω length 14.4 mm width 1.5 mm L10 stripline; note 4 5.22 Ω length 3.2 mm width 13 mm L11 5 turns enamelled 1 mm copper wire 35 nH pitch 1.23 mm int. dia. 3.2 mm R1, R2 metal film resistor 100 Ω, 0.4 W Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. For operation at 820 to 900 MHz: C2 = 6.2 pF. 3. American Technical Ceramics type 100B or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 10.2); thickness 0.64 mm. 1999 Jun 25 8 Philips Semiconductors Product specification UHF power transistor BLV909 65 handbook, full pagewidth 40 3 +Vbias +VS C16 C15 C14 C13 C12 C7 C6 C5 C11 R1 L5 R2 L12 L6 C4 C3 C1 L1 C10 L2 L7 L4 C2 L11 C9 L9 C8 L3 L10 L8 MBH093 Dimensions in mm. The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.13 Component layout and printed-circuit board and component lay-out for 900 to 960 MHz class-AB test circuit. 1999 Jun 25 9 Philips Semiconductors Product specification UHF power transistor BLV909 MGD272 MGD271 6 16 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 12 XL 4 ri RL 8 xi 2 4 0 800 840 880 920 0 800 960 1000 f (MHz) 840 880 920 960 1000 f (MHz) VCE = 26 V; ICQ = 25 mA; PL = 9 W; Tmb = 25 °C. VCE = 26 V; ICQ = 25 mA; PL = 9 W; Tmb = 25 °C. Fig.14 Input impedance as a function of frequency (series components); typical values. Fig.15 Load impedance as a function of frequency (series components); typical values. MGG309 16 handbook, halfpage GP (dB) 12 handbook, halfpage 8 Zi ZL 4 0 800 840 880 920 MBA451 960 1000 f (MHz) VCE = 26 V; ICQ = 25 mA; PL = 9 W; Tmb = 25 °C. Fig.16 Power gain as a function of frequency; typical values. 1999 Jun 25 Fig.17 Definition of transistor impedance. 10 Philips Semiconductors Product specification UHF power transistor BLV909 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409B D A D2 B c w2 B H1 8 5 L E2 H E A 1 4 e α w1 b Q1 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 α mm 2.36 2.06 0.58 0.43 0.15 0.10 5.94 5.03 5.16 5.00 4.93 4.01 4.14 3.99 1.27 7.47 7.26 4.39 4.24 0.84 0.69 0.10 0.00 0.25 0.25 2° 0° inches 0.093 0.081 0.023 0.017 0.006 0.004 0.234 0.198 0.203 0.197 0.194 0.158 0.163 0.157 0.050 0.294 0.286 0.173 0.167 0.033 0.027 0.004 0.000 0.010 0.010 2° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 98-01-27 SOT409B 1999 Jun 25 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification UHF power transistor BLV909 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jun 25 12 Philips Semiconductors Product specification UHF power transistor BLV909 NOTES 1999 Jun 25 13 Philips Semiconductors Product specification UHF power transistor BLV909 NOTES 1999 Jun 25 14 Philips Semiconductors Product specification UHF power transistor BLV909 NOTES 1999 Jun 25 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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