MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1800HC-34H PRE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC ................................................................ 1800A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a pack ● AISiC base plate APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM 190 171 57 ±0.25 57 ±0.25 Dimensions in mm 6 - M8 NUTS 57 ±0.25 C C C E E E C 20 G E C CM E C E E 124 ±0.25 140 C 40 C E CIRCUIT DIAGRAM G 20.25 8 - φ7MOUNTING HOLES 41.25 79.4 15 61.5 61.5 40 13 28 5 38 5.2 LABEL 29.5 3 - M4 NUTS HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som PRE CM1800HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Mass Conditions Ratings Unit — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value 1700 ±20 1800 3600 1800 3600 15600 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 V V A A A A W °C °C V N·m N·m N·m kg VGE = 0V VCE = 0V DC, TC = 85°C Pulse (Note 1) Pulse TC = 25°C, IGBT part (Note 1) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance ICES Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min — Limits Typ — Max 32 IC = 180mA, VCE = 10V 4.5 5.5 6.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 1800A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — 2.40 2.95 168 21.0 8.4 15.4 — — — — 2.50 — 700 — — 0.006 0.5 — — — — — — 1.60 2.00 2.70 0.80 — 2.70 — 0.008 0.013 — µA Item Conditions VCE = 10V VGE = 0V VCC = 850V, IC = 1800A, VGE = 15V VCC = 850V, IC = 1800A VGE1 = VGE2 = 15V RG = 0.3Ω Resistive load switching operation IE = 1800A, VGE = 0V IE = 1800A, die / dt = –5100A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 4) Unit mA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. IE , VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003