DMC2038LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V(BR)DSS Q1 20V Q2 -20V Features • • • • • • • • ID TA = 25°C 4.5A 3.5A 3.1A 2.0A RDS(ON) 35mΩ @ VGS = 4.5V 56mΩ @ VGS = 1.8V 74mΩ @ VGS = -4.5V 168mΩ @ VGS = -1.8V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications • • • • • • Motor control Power Management Functions DC-DC Converters Backlighting • • Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections Indicator: See diagram Weight: 0.013 grams (approximate) • • Q1 Q2 D1 TSOT26 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 Top View Pin Configuration Top View D2 G2 S1 S2 N-Channel P-Channel Ordering Information (Note 4) Part Number DMC2038LVT-7 DMC2038LVTQ-7 Notes: Qualification Commercial Automotive Case TSOT26 TSOT26 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 31C Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMC2038LVT Document number: DS35417 Rev. 4 - 2 Mar 3 31C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) YM NEW PRODUCT Product Summary 2012 Z Apr 4 May 5 2013 A Jun 6 1 of 10 www.diodes.com 2014 B Jul 7 Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D September 2012 © Diodes Incorporated DMC2038LVT Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) ID Value 20 ±12 3.7 3.0 ID 4.1 3.2 A ID 4.5 3.6 A ID IS IDM 5.2 4.2 1.5 25 Units V V A A A A Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) ID Value -20 ±12 2.6 2.1 ID 2.9 2.4 A ID 3.1 2.5 A ID IS IDM 3.8 3.0 -1.5 -17 Units V V A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: PD RθJA PD RθJA RθJC TJ, TSTG Value 0.8 0.5 168 120 1.1 0.7 114 72 39 -55 to 150 Units W °C/W W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMC2038LVT Document number: DS35417 Rev. 4 - 2 2 of 10 www.diodes.com September 2012 © Diodes Incorporated DMC2038LVT Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @Tc = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7 Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS =16V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 27 33 43 9 - 1.0 35 43 56 1.1 V Static Drain-Source On-Resistance 0.4 0.4 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4.0A VGS = 2.5V, ID = 2.5A VGS = 1.8V, ID = 1.5A VDS = 5V, ID = 3.4A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 400 70 65 1.9 5.7 12 0.7 1.4 5 8 25 8 530 90 100 17 10 16 40 16 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V,ID = 5.8A VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A, 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 30 20 VGS=10V TA = -55°C VDS= 5.0V VGS=4.5V 25 TA = 85°C VGS =3.0V VGS =4.0V 20 VGS =3.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) VGS =2.5V 15 VGS=2.0V 10 TA = 150°C 15 TA = 25°C TA = 125°C 10 5 5 VGS=1.5V 0 0 0.5 1 1.5 0 2 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DMC2038LVT Document number: DS35417 Rev. 4 - 2 0 0.5 1 1.5 2 2.5 3 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 3 of 10 www.diodes.com September 2012 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) 0.07 0.06 0.05 VGS = 1.8V 0.04 VGS = 2.5V 0.03 VGS = 4.5V 0.02 0.01 0 0 5 10 15 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.7 1.5 1.3 1.1 0.9 0.7 -25 0 25 50 75 100 125 0.08 VGS= 4.5V TA = 150°C 0.06 TA = 125 °C 0.04 TA = 85°C TA = 25°C 0.02 TA = -55°C 0 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0.08 0.5 -50 0 4 8 12 16 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 VGS=5V ID=5A 0.05 0.04 0.03 VGS=10V ID=10A 0.02 0.01 0 -50 150 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 20 1.5 18 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) NEW PRODUCT DMC2038LVT 1 ID=1mA 0.5 ID=250µA 16 14 T A= 25°C 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMC2038LVT Document number: DS35417 Rev. 4 - 2 4 of 10 www.diodes.com 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 September 2012 © Diodes Incorporated DMC2038LVT 1000 10 VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) CISS 100 C OSS CRSS 10 8 VDS=15V 6 4 2 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 0 2 4 6 8 10 12 Qg , TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 14 100 ID, DRAIN CURRENT (A) RDS(on) Limited 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 T J(max) = 150°C TA = 25°C VGS = 10V Single Pulse 0.01 DUT on 1 * MRP Board 0.1 PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 164°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMC2038LVT Document number: DS35417 Rev. 4 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 12 Transient Thermal Resistance 5 of 10 www.diodes.com 10 100 1,000 September 2012 © Diodes Incorporated DMC2038LVT Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @Tc = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -16V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 57 76 102 10 -0.8 -1.0 74 110 168 -1.0 V Static Drain-Source On-Resistance -0.4 - VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -1.5A VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -3.0A VGS = 0V, IS = -0.6A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 530 70 60 72 7 14 0.95 1.2 11 12 21 13 705 95 90 10 20 22 34 23 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC nS nS nS nS Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V,ID = -6A VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A, 7. Short duration pulse test used to minimize self-heating effec 8. Guaranteed by design. Not subject to product testing. 20 20 -VGS=10V 15 -VGS=4.0V I-D, DRAIN CURRENT (A) -VGS=4.5V -ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) -VGS=3.0V -VGS=2.5V -VGS=3.5V 10 -VGS=2.0V 5 15 10 5 -VGS=1.5V 0 0 0 0.5 1 1.5 2 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 13 Typical Output Characteristics DMC2038LVT Document number: DS35417 Rev. 4 - 2 6 of 10 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE SOURCE VOLTAGE(V) Fig. 14 Typical Transfer Characteristics 5 September 2012 © Diodes Incorporated DMC2038LVT RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) 0.16 0.12 VGS = -1.8V NEW PRODUCT VGS = -2.5V 0.08 VGS = -4.5V 0.04 0.20 0.16 0.14 0.08 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature TA = 25° C 0.04 T A = -55°C 0.02 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Fig. 16 Typical On-Resistance vs. Drain Current and Temperature 20 0.14 0.12 -VGS=5V -ID=5A 0.1 0.08 0.06 -VGS=10V -ID=10A 0.04 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 18 On-Resistance Variation with Temperature 20 1.5 18 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE(V) TA = 85° C 0.06 20 1.7 TA = 125°C 0.1 0 5 10 15 -ID, DRAIN SOURCE CURRENT Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 150°C 0.12 0 0 VGS = 4.5V 0.18 1 0.5 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 19 Gate Threshold Variation vs. Ambient Temperature DMC2038LVT Document number: DS35417 Rev. 4 - 2 7 of 10 www.diodes.com 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 20 Diode Forward Voltage vs. Current 1.6 September 2012 © Diodes Incorporated DMC2038LVT 1000 10 f = 1MHz -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 100 COSS CRSS 0 5 10 15 8 6 Qg vs. VGS 4 2 0 0 10 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Junction Capacitance 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Fig. 22 Gate-Charge Characteristics 16 100 -ID, DRAIN CURRENT (A) RDS(on) Limited 10 1 DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms TJ(max) = 150°C PW = 1ms PW = 100µs TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 23 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT CISS D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 164°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMC2038LVT Document number: DS35417 Rev. 4 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 24 Transient Thermal Resistance 8 of 10 www.diodes.com 10 100 1,000 September 2012 © Diodes Incorporated DMC2038LVT Package Outline Dimensions NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D e1 E E1 L2 c 4x θ1 e L θ 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 − − A1 0.01 0.10 − A2 0.84 0.90 − D 2.90 − − E 2.80 − − E1 1.60 − − b 0.30 0.45 − c 0.12 0.20 − e 0.95 − − e1 1.90 − − L 0.30 0.50 L2 0.25 − − θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMC2038LVT Document number: DS35417 Rev. 4 - 2 9 of 10 www.diodes.com September 2012 © Diodes Incorporated DMC2038LVT NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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