DMC2990UDJ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION Device Q1 Q2 V(BR)DSS 20V -20V Features and Benefits RDS(ON) max ID max TA = +25°C Low On-Resistance Very low Gate Threshold Voltage, 1.0V max 0.99Ω @ VGS = 4.5V 450mA Low Input Capacitance 1.2Ω @ VGS = 2.5V 400mA Fast Switching Speed 1.8Ω @ VGS = 1.8V 330mA Ultra-Small Surface Mount Package 1mm x 1mm 2.4Ω @ VGS = 1.5V 300mA Low Package Profile, 0.45mm Maximum Package height 1.9Ω @ VGS = -4.5V -310mA 2.4Ω @ VGS = -2.5V -280mA 3.4Ω @ VGS = -1.8V -240mA 5Ω @ VGS = -1.5V -180mA ESD Protected Gate Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3 & 4) Qualified to AEC-Q101 standards for High Reliability Mechanical Data Description Case: SOT963 This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Applications Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 General Purpose Interfacing Switch Weight: 0.027 grams (approximate) Power Management Functions Analog Switch Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 SOT963 ESD PROTECTED Top View D1 G2 S2 S1 G1 D2 Top View Schematic and Transistor Diagram Ordering Information (Note 5 & 6) Part Number DMC2990UDJ-7 DMC2990UDJ-7B Notes: Case SOT963 SOT963 Packaging 10K/Tape & Reel 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details. 6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html Marking Information D1 DMC2990UDJ Document number: DS35481 Rev. 9 - 2 D1 = Product Type Marking Code 1 of 9 www.diodes.com March 2013 © Diodes Incorporated DMC2990UDJ Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 4.5V Steady State t<5s Continuous Drain Current (Note 7) VGS = 1.8V Steady State t<5s TA = +25°C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (Note 8) ID Value 20 ±8 450 350 ID 520 410 mA ID 330 260 mA ID IS IDM 390 310 440 800 Units V V mA mA mA mA Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State t<5s Continuous Drain Current (Note 5) VGS = -1.8V Steady State t<5s TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (Note 8) ID Value -20 ±8 -310 -240 ID -360 -280 mA ID -240 -190 mA ID IS IDM -280 -220 -440 -800 Units V V mA mA mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Steady State t<5s Operating and Storage Temperature Range Notes: RθJA TJ, TSTG Value 350 360 270 -55 to +150 Units mW °C/W °C/W °C 7. Device mounted on FR-4 PCB, with minimum recommended pad layout. 8. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. DMC2990UDJ Document number: DS35481 Rev. 9 - 2 2 of 9 www.diodes.com March 2013 © Diodes Incorporated DMC2990UDJ Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TC = +25°C Symbol Min Typ Max Unit BVDSS 20 - - 100 50 ±100 V |Yfs| VSD 0.4 180 - 0.60 0.75 0.90 1.2 2.0 850 0.6 1.0 0.99 1.2 1.8 2.4 1.0 mS V Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf - 27.6 4.0 2.8 113 0.5 0.07 0.07 4.0 3.3 19.0 6.4 - pF pF pF Ω nC nC nC ns ns ns ns IDSS Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) IGSS Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time nA nA V Ω Test Condition VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VDS = 5V, VGS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA VGS = 1.2V, ID = 1mA VDS = 5V, ID = 125mA VGS = 0V, IS = 10mA VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 15V, VGS = 4.5V, RL = 47Ω, RG = 2Ω, ID = 200mA Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TC = +25°C Symbol Min Typ Max Unit BVDSS -20 - - 100 50 ±100 V |Yfs| VSD -0.4 100 - 1.2 1.5 2.1 2.5 4.0 450 -0.6 -1.0 1.9 2.4 3.4 5 -1.0 mS V Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf - 28.7 4.2 2.9 399 0.4 0.08 0.06 5.8 5.7 31.1 16.4 - pF pF pF Ω nC nC nC ns ns ns ns IDSS Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: IGSS nA nA V Ω Test Condition VGS = 0V, ID = -250μA VDS = -16V, VGS = 0V VDS = -5V, VGS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -50mA VGS = -1.8V, ID = -20mA VGS = -1.5V, ID = -10mA VGS = -1.2V, ID = -1mA VDS = -5V, ID = -125mA VGS = 0V, IS = -10mA VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS =- 10V, ID = -250mA VDD = -15V, VGS = -4.5V, RG = 2Ω, ID = -200mA 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMC2990UDJ Document number: DS35481 Rev. 9 - 2 3 of 9 www.diodes.com March 2013 © Diodes Incorporated DMC2990UDJ Q1 N-CHANNEL 0.8 0.8 VGS = 4.5V TA = -55°C T A = 85°C TA = 25°C ID, DRAIN CURRENT(A) ID , DRAIN CURRENT (A) VGS = 2.5V VGS = 2.0V 0.4 VGS = 1.5V 0.2 0.6 TA = 125°C TA = 150°C 0.4 0.2 VGS = 1.2V 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (A) Fig. 1 Typical Output Characteristics VDS = 5.0V 4 1.2 1.0 VGS = 1.8V 0.8 0.6 VGS = 2.5V VGS = 4.5V 0.4 0.2 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage ID = 300mA 1.4 1.2 ID = 150mA 1.0 0.8 1.0 Document number: DS35481 Rev. 9 - 2 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3 VGS = 4.5V T A = 150°C 0.8 T A = 125°C 0.6 TA = 85°C TA = 25°C 0.4 T A = -55°C 0.2 0 0.4 0.6 0.8 1.0 ID DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 5 On-Resistance Variation with Temperature DMC2990UDJ 0 1.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 0.6 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS = 3.0V 0.6 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION VGS =4.0V 4 of 9 www.diodes.com 0 0.2 1.2 1.0 0.8 ID = 150mA 0.6 ID = 300mA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 6 On-Resistance Variation with Temperature March 2013 © Diodes Incorporated DMC2990UDJ IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 0.8 0.6 TA= 25°C 0.4 0.2 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE- DRAIN VOLTAGE (V) Fig. 8 Diodes Forward Voltage vs. Current 1,000 50 40 IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz 30 Ciss 20 10 Coss 0 T A = 150°C 100 TA = 125°C TA = 25°C Crss 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance TA = 85°C 10 1 20 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 2 1 8 4 RDS(on) Limited DC 6 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION 1.2 4 2 0.1 0 0.2 0.4 0.6 0.8 QG - (nC) Fig. 11 Gate Charge Characteristics DMC2990UDJ Document number: DS35481 Rev. 9 - 2 PW = 1s PW = 100ms PW = 10ms PW = 10µs PW = 1ms 0.01 TJ(MAX) = 150°C TA = 25°C Single Pulse VDS = 10V 0 PW = 100µs PW = 10s 1 0.001 0.1 5 of 9 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE Fig. 12 SOA, Safe Operation Area 100 March 2013 © Diodes Incorporated DMC2990UDJ Q2 P-CHANNEL 0.8 0.8 0.6 0.6 VDS = -5.0V TA= 85°C TA= 150°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -ID, DRAIN CURRENT(A) 0.2 0 0.5 1 1.5 2 2.5 3 3.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Output Characteristics 3.2 2.8 VGS = -1.8V 2.4 2.0 1.6 1.2 VGS = -4.5V 0.8 0.4 0 0 0.2 0.4 0.6 -ID, DRAIN-SOURCE CURRENT Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage TA= 125°C T A= -55°C 0.4 0.2 0 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -ID, DRAIN CURRENT (A) 0.4 0 0.8 1.7 0 2.0 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 14 Typical Transfer Characteristics VGS = -4.5V 4 T A= 150°C TA= 125°C 1.6 T A= 85°C 1.2 T A= 25°C 0.8 T A= -55°C 0.4 0 0 0.2 0.4 0.6 -ID DRAIN CURRENT (A) Fig. 16 Typical On-Resistance vs. Drain Current and Temperature 0.8 2.4 VGS = -2.5V, ID = -150mA 1.5 1.3 VGS = -4.5V, ID = -300mA 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 17 On-Resistance Variation with Temperature DMC2990UDJ Document number: DS35481 Rev. 9 - 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION TA= 25°C 6 of 9 www.diodes.com VGS = -2.5V, ID = -150mA 2.0 1.6 1.2 VGS = -4.5V, ID = -300mA 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 18 On-Resistance Variation with Temperature March 2013 © Diodes Incorporated DMC2990UDJ IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.8 1.0 0.8 ID = -1mA 0.6 ID = -250µA 0.4 0.6 TA= 25°C 0.4 0.2 0.2 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 19 Gate Threshold Variation vs. Ambient Temperature 50 0.6 0.8 1.0 1.2 VSD, SOURCE- DRAIN VOLTAGE (V) Fig. 20 Diodes Forward Voltage vs. Current 1,000 f = 1MHz 40 -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) T A= 150°C Ciss 30 20 10 Coss 0 TA= 125°C 100 TA= 85°C 10 TA= -25°C Crss 0 2 4 6 8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Junction Capacitance 1 10 5 0 2 4 6 8 10 12 14 16 18 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 22 Typical Leakage Current vs. Drain-Source Voltage 20 10 PW = 100µs PW = 1ms 4 ID, DRAIN CURRENT (A) -VGS, GATE SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION 1.2 3 VDS = 10V, ID = -4.5A 2 1 RDS(ON) Limited 1 PW = 10µs PW = DC 0.1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.01 TJ(MAX) = 150C TA = 25C Single Pulse 0 0 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Fig. 23 Gate Charge Characteristics DMC2990UDJ Document number: DS35481 Rev. 9 - 2 18 0.001 0.1 7 of 9 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 24 SOA, Safe Operation Area 100 March 2013 © Diodes Incorporated DMC2990UDJ R(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA (t) = r(t)*RJA RJA = 356C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 25 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions D e1 L E E1 e b (6 places) c A SOT963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 c 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm A1 Suggested Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DMC2990UDJ Document number: DS35481 Rev. 9 - 2 8 of 9 www.diodes.com March 2013 © Diodes Incorporated DMC2990UDJ NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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