EFE960BVR-5759 5.70-5.90GHz 4-Watt Partially Matched Power FET UPDATED 10/26/2006 FEATURES • • • • • • • 5.70-5.90 GHz Bandwidth +36.0 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at Po = 24.5 dBm SCL Non-Hermetic 180 Mil Metal Flange Package 100% Tested for DC, RF, and RTH Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB PAE Id1dB IM3 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA Saturated Drain Current VP Pinch-off Voltage Notes: f = 5.8GHz Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 5.8GHz Drain Current at 1dB Compression f = 5.8GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 24.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.8GHz IDSS RTH f = 5.8GHz MIN TYP 35.0 36.0 dBm 8.0 9.0 dB 25 % 1300 -43 MAX 1400 dBc 2000 2500 VDS = 3 V, IDS = 20 mA -2.5 -4.0 5.5 Thermal Resistance 1. FET TO BE TESTED IN EXCELICS EVALUATION BOARD. 2. S.C.L. = Single Carrier Level. 3. OVERALL Rth DEPENDS ON CASE MOUNTING. mA -46 VDS = 3 V, VGS = 0 V 3 UNITS 6.0 mA V o C/W DATA REFERS TO EDGES OF PACKAGE. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 VDS Drain-Source Voltage 15V 10V VGS Gate-Source Voltage -5V -4.5V Igf Forward Gate Current 43.2 mA 14.4 mA Igr Reversed Gate Current -7.2 mA -2.4 mA Pin Input Power 33 dBm @ 3dB Compression Tch Channel Temperature o 175 C 175oC Tstg Storage Temperature Pt Total Power Dissipation o -65/175 C -65/175oC 25W 25W Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EFE960BVR-5759 5.70-5.90GHz 4-Watt Partially Matched Power FET UPDATED 10/26/2006 TEST CIRCUITS Evaluation Board Schematic (VDS = 10 V, IDSQ ≈ 1100mA) -Vg +Vd C5 C3 C6 R1 C4 T2 T1 C1 T6 T4 T9 T8 T3 C2 T10 RF OUT RF IN T5 T7 C1, C2: 8.2 pF chip capacitor C3, C4: 1000 pF chip capacitor C5, C6: 1 uF chip capacitor R1: 50 Ω chip resistor Evaluation Board (should be mounted on appropriate heatsink) Vg PCB MATERIAL: FR4 THICKNESS: 0.031 INCH Er: 4.6 Vd C5 C3 C6 C4 R1 1.00 C1 C2 Excelics 086-101417-01 1.45 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EFE960BVR-5759 5.70-5.90GHz 4-Watt Partially Matched Power FET UPDATED 10/26/2006 S-PARAMETERS VDS = 10 V, IDSQ ≈ 1100mA FREQ (GHz) 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8 8.0 --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 0.914 0.899 0.881 0.864 0.834 0.796 0.745 0.674 0.579 0.464 0.383 0.442 0.563 0.680 0.769 0.815 0.855 0.883 0.899 0.909 0.917 1.242 1.308 1.388 1.486 1.594 1.725 1.892 2.076 2.272 2.432 2.490 2.368 2.171 1.890 1.623 1.387 1.224 1.080 0.944 0.854 0.762 0.024 0.025 0.026 0.030 0.032 0.034 0.039 0.043 0.047 0.052 0.055 0.055 0.053 0.051 0.047 0.044 0.044 0.044 0.044 0.045 0.046 0.647 0.650 0.652 0.663 0.677 0.697 0.726 0.769 0.818 0.864 0.892 0.896 0.861 0.804 0.740 0.698 0.662 0.634 0.608 0.594 0.583 153.5 149.7 145.0 139.8 134.1 127.8 121.4 115.1 110.0 110.3 123.0 142.2 148.8 146.7 141.0 135.4 130.0 124.9 120.3 116.0 111.2 8.8 2.2 -4.9 -12.7 -21.3 -31.2 -41.9 -54.0 -68.5 -85.5 -104.4 -122.7 -142.4 -159.6 -174.5 173.7 163.1 152.2 142.8 133.7 124.8 -26.2 -32.7 -39.2 -49.6 -60.2 -72.4 -83.4 -98.6 -116.3 -136.0 -161.4 176.1 150.2 129.3 107.9 90.2 77.1 63.9 51.1 40.4 31.0 173.9 171.8 169.5 166.6 163.5 160.0 156.5 152.0 146.4 139.3 130.9 125.7 115.8 106.7 99.2 92.6 85.1 77.5 69.3 61.4 53.6 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006