FDQ7236AS Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package General Description Features The FDQ7236AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using TM Fairchild’s SyncFET technology. The FDQ7236AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. • Q2: 14 A, 30V. RDS(on) = 8.7 mΩ @ VGS = 10V RDS(on) = 10.5 mΩ @ VGS = 4.5V • Q1: 11 A, 30V. RDS(on) = 13.2 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.5V S2 S2 S2 G1 SO-14 pin 1 G2 Vin Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current PD Power Dissipation for Single Operation - Continuous - Pulsed Q2 (Note 1a) (Note 1a & 1b) (Note 1c & 1d) TJ, TSTG Q1 Units 30 30 ±20 14 50 2.4 1.3 ±20 11 50 1.8 1.1 V V −55 to +150 Operating and Storage Junction Temperature Range A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68 (Note 1c & 1d) 94 118 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDQ7236AS FDQ7236AS 13” 16mm 2500 units ©2011 Fairchild Semiconductor Corporation FDQ7236AS Rev C FDQ7236AS January 2011 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 µA ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V Gate-Body Leakage VDS = 24 V, VGS = 0 V, TJ = 125°C VGS = ±20 V, VDS = 0 V On Characteristics Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 ALL 30 30 Q2 Q1 Q2 Q1 Q2 1 1 V 25 24 mV/°C 500 1 5.6 40 ±100 µA mA µA nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On–State Drain Current gFS Forward Transconductance VDS = VGS, ID = 1 mA ID = 250 µA VDS = VGS, ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 14A, TJ = 125°C VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 11, TJ = 125°C VGS = 10 V, VDS = 5 V VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 14 A ID = 11 A VDS = 10 V, Q1 Q2 Q1 Q2 Q1 1.8 1.7 −3 −4 7.2 8.7 10 11 13 15 50 50 3 3 V mV/°C 8.7 10.5 12.5 13.2 16 19 mΩ A 58 43 S 1530 920 440 190 160 120 1.9 1.9 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, f = 1.0 MHz VGS = 0 V, VGS = 15mV, f = 1.0 MHz Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 pF pF Ω FDQ7236AS Rev C FDQ7236AS Electrical Characteristics Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time td(on) Turn-On Delay Time tr Turn-On Rise Time Test Conditions VDD = 15 V, VGS = 10V, VDD = 15 V, VGS = 4.5V, Turn-Off Delay Time tf Turn-Off Fall Time Qg(TOT) Total Gate Charge, VGS = 10V Qg(TOT) Total Gate Charge, VGS = 5V Gate-Source Charge Qgd Gate-Drain Charge Type Min Typ Max Units (Note 2) td(off) Qgs TA = 25°C unless otherwise noted Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 ID = 1 A, RGEN = 6 Ω ID = 1 A, RGEN = 6 Ω Q2 VDS = 15 V, ID = 14A Q1 VDS = 15 V, ID = 11A 12 9 13 5 30 27 19 4 17 11 18 15 28 16 13 9 28 17 15 9 4.1 2.7 4.9 3.3 21 18 23 10 49 43 35 8 30 20 32 26 44 29 23 18 39 24 21 19 ns ns ns ns ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr trr Qrr Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.4 A VGS = 0 V, IS = 1.9 A IS = 2.1 A VGS = 0 V, IF = 14A dIF/dt = 300 A/µs IF = 11A dIF/dt = 100 A/µs (Note 2) Q2 Q1 Q2 0.5 0.4 0.7 22 (Note 2) (Note 2) Q1 Q2 3.4 2.1 0.7 V 1.2 ns 15 16 5 Q1 A nC ns nC NOTE : 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 68°C/W when mounted on a 1in2 pad of 2 oz copper (Q1). c) 118°C/W when mounted on a minimum pad of 2 oz copper (Q1). b) 52°C/W when mounted on a 1in2 pad of 2 oz copper (Q2). d) 94°C/W when mounted on a minimum pad of 2 oz copper (Q2). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3 4 FDQ7236AS Rev C FDQ7236AS Electrical Characteristics FDQ7236AS Typical Characteristics: Q2 2.6 50 3.5V 6.0V 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 4.0V 4.5V 30 3.0V 20 10 2.5V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 3.5V 1.4 4.0V 4.5V 6.0V 10.0V 1 2 0 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.024 1.6 ID = 14A VGS =10V ID = 7A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 0.6 0 1.4 1.2 1 0.8 0.02 0.016 TA = 125oC 0.012 TA = 25oC 0.008 0.004 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 2 150 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 40 ID, DRAIN CURRENT (A) VGS = 3.0V 30 20 TA = 125oC o -55 C 10 o 25 C 10 TA = 125oC 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7236AS Rev C 2500 f = 1MHz VGS = 0 V ID = 14A 8 2000 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 Ciss 1500 1000 Coss 2 500 0 0 Crss 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30 0 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10ms RDS(ON) LIMIT ID, DRAIN CURRENT (A) 5 10 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 94oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 94°C/W TA = 25°C 40 30 20 10 0 0.001 100 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 94°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1d. Transient thermal response will change depending on the circuit board design FDQ7236AS Rev C FDQ7236AS Typical Characteristics : Q2 FDQ7236AS Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power dissipated in the device. 0.1 CURRENT: 0.8A/div IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7236AS Q2. 0.01 TA = 125oC 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12nS/div Figure 12. FDQ7236AS SyncFET body diode reverse recovery characteristic. CURRENT: 0.4A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6670A). TIME : 12nS/div Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic. FDQ7236AS Rev C FDQ7236AS Typical Characteristics: Q1 2.6 50 6.0V 40 VGS = 3.0V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 4.5V 3.5V 30 20 3.0V 10 2.2 1.8 3.5V 1.4 4.0V 4.5V 6.0V 10.0V 1 2.5V 0 0.6 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 0 Figure 15. On-Region Characteristics. 40 50 0.036 ID = 5.5A ID = 11A VGS = 10V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 30 ID, DRAIN CURRENT (A) Figure 16. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 1.3 1.2 1.1 1 0.9 0.8 0.032 0.028 0.024 o TA = 125 C 0.02 0.016 TA = 25oC 0.012 0.008 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 17. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 18. On-Resistance Variation with Gate-to-Source Voltage. 50 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 40 ID, DRAIN CURRENT (A) 10 30 20 o TA = 125 C o -55 C 10 25oC 10 o TA = 125 C 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 19. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 20. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7236AS Rev C 1500 f = 1MHz VGS = 0 V ID = 11A 8 1200 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 Ciss 900 600 Coss 2 300 0 0 Crss 0 4 8 12 Qg, GATE CHARGE (nC) 16 20 0 Figure 21. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 22. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 100 100µs RDS(ON) LIMIT ID, DRAIN CURRENT (A) 5 1ms 10 10ms 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 118oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 118°C/W TA = 25°C 40 30 20 10 0 0.001 100 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 23. Maximum Safe Operating Area. 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 24. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 118 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design. FDQ7236AS Rev C FDQ7236AS Typical Characteristics: Q1 tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54 FDQ7236AS Rev C FDQ7236AS TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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