EUDYNA FLM1011-15F

FLM1011-15F
X,Ku-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=31%(Typ.)
・Broad Band: 10.7~11.7GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM1011-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
W
PT
57.7
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
o
C
o
C
175
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C)
Item
Symbol
DC Input Voltage
VDS
Forward Gate Current
IGF
RG=50Ω
Reverse Gate Current
IGR
RG=50Ω
Unit
Limit
Condition
≤10
V
≤16.7
≥-3.62
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Symbol
Drain Current
IDSS
Test Conditions
VDS=5V, VGS=0V
Min.
-
Limit
Typ.
7.2
Max.
10.8
Unit
A
Transconductance
gm
VDS=5V, IDS=4.55A
-
4500
-
mS
Pinch-off Voltage
Vp
VDS=5V, IDS=300mA
-0.5
-1.5
-3.0
V
Gate-Source Breakdown Voltage
VGSO
IGS=-300uA
-5.0
-
-
V
Output Power at 1dB G.C.P.
P1dB
41.0
42.0
-
dBm
Power Gain at 1dB G.C.P.
G1dB
6.0
7.0
-
dB
-
4.0
5.0
A
-
31
-
%
-
-
1.2
dB
Channel to Case
-
2.3
2.6
10V x Idsr x Rth
-
-
100
-42
-45
Idsr
Drain Current
Power-added Efficiency
ηadd
Gain Flatness
∆G
Thermal Resistance
Rth
Channel Temperature Rise
3rd Order Intermodulation
Distortion
∆Tch
IM3
VDS=10V
f=10.7 - 11.7 GHz
IDS=0.5Idss (typ)
Zs=ZL=50Ω
f=11.7GHz,
∆ f=10MHz, 2-Tone Test
Pout=30.0dBm S.C.L.
CASE STYLE: IB
ESD
C/W
o
C
dBc
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Class III
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
September 2004
-
o
1
FLM1011-15F
X,Ku-Band Internally Matched FET
OUTPUT POWER , POWER ADDED EFFICIENCY
v.s. INPUT POWER
POWER DERATING CURVE
Output Power [dBm]
Total Power Dissipation [W]
50
40
30
20
10
0
0
50
100
150
44
70
42
60
40
50
Pout
38
40
36
30
PAE
34
20
32
10
30
0
200
22
24
Case Temperature [o C]
26
28
30
32
34
36
38
38
Input Power [dBm]
IMD v.s. OUTPUT POWER (S.C.L.)
OUTPUT POWER v.s. FREQUENCY
Vds=10V, Ids=3.6A
f1=11.70GHz, f2=11.71GHz, 2-tone test
Vds=10V, Ids=0.5Idss
44
-40
Intermodulation Distortion [dBc]
Pin=36dBm
Output Power [dBm]
42
40
38
Pin=34dBm
P1dB
Pin=30dBm
36
Pin=26dBm
34
-44
-48
IM3
-52
-56
IM5
-60
32
10.5
10.7
10.9
11.1
11.3
11.5
11.7
11.9
-64
25
Frequency [GHz]
26
27
28
29
30
31
32
Output Power (S.C.L.) [dBm]
2
33
34
Power Added Efficiency [%]
Vds=10V, Ids=0.5Idss Freq=11.2GHz
60
FLM1011-15F
X,Ku-Band Internally Matched FET
■ S-PARAMETERS
+90°
+50j
+100j
+25j
10.5
+10j
10.7
10.9
11.9
10Ω
25Ω
11.7
50Ω 11.9
11.7
11.1
11.5 11.3
11.5 11.3
-10j
-25j
∞
10.5
±180°
10.5
6
Scale for |S21|
10.7
-250j
10.9
11.1
10.7
11.1
-100j
11.5
10.9 11.1
11.3
10.7
11.5
10.5
11.7
11.9
S 11
-50j
11.3
11.7
0°
11.9
Scale for | S 12 |
0
10.9
+250j
S 22
0.6
S 21
-90°
S 12
VDS=10V , IDS=0.5Idss
Freq.
(G H z)
10.5
10.6
10.7
10.8
10.9
11.0
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
S 11
M AG
0.580
0.543
0.505
0.465
0.428
0.389
0.359
0.334
0.325
0.325
0.338
0.359
0.383
0.415
0.445
ANG
62.4
51.5
39.9
26.8
11.9
-5.2
-23.9
-45.5
-67.6
-90.9
-113.1
-134.2
-154.1
-172.6
169.3
S 21
M AG
2.199
2.241
2.289
2.328
2.380
2.419
2.453
2.476
2.472
2.466
2.446
2.403
2.367
2.312
2.243
S 12
ANG
163.7
152.6
142.1
131.0
119.8
108.3
96.2
84.4
72.1
59.6
47.2
34.3
21.8
9.1
-4.3
3
M AG
0.061
0.067
0.072
0.078
0.084
0.089
0.092
0.095
0.097
0.099
0.100
0.100
0.099
0.096
0.095
S 22
ANG
143.2
131.7
121.5
109.7
98.9
87.5
75.7
64.1
51.7
40.7
28.0
16.9
6.5
-4.4
-15.8
M AG
0.438
0.439
0.442
0.446
0.440
0.426
0.406
0.378
0.342
0.298
0.250
0.201
0.158
0.128
0.121
ANG
-10.3
-21.9
-33.2
-44.2
-54.3
-64.2
-73.5
-81.8
-88.4
-93.3
-95.3
-95.0
-88.3
-74.1
-52.5
FLM1011-15F
X,Ku-Band Internally Matched FET
■ Package Out Line
Case Style : IB
Unit : mm
PIN ASSIGNMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
4
FLM1011-15F
X,Ku-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
5