SOT 223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1049A ISSUE 2 - JUNE 2007 C FEATURES * * * * * * VCEO = 25V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 20 A Continuous Collector Current IC 5 A Base Current IB 500 mA Power Dissipation at T amb=25°C † P tot 2.5 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C † The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. FZT1049A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 80 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 130 V IC=100µA 80 130 V IC=100µA * VCEO 25 30 VCEV 80 130 V IC=100µA, VEB=1V 5 9 V IE=100µA Emitter-Base Breakdown V(BR)EBO Voltage MAX. V IC=10mA Collector Cut-Off Current ICBO 0.3 10 nA VCB=35V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=35V Collector-Emitter Saturation Voltage VCE(sat) 35 70 180 250 60 100 250 330 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=30mA* IC=5A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 950 1050 mV IC=5A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 900 1000 mV IC=5A, VCE=2V* Static Forward Current Transfer Ratio hFE 280 300 300 180 40 440 450 450 280 80 Transition Frequency fT 180 Output Capacitance Cobo 45 Turn-on Time ton Turn-off Time toff IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* 1200 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 125 ns IC=4A, IB=40mA, VCC=10V 380 ns 60 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FZT1049A TYPICAL CHARACTERISTICS 1.0 1.0 +25°C IC/IB=100 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.8 IC/IB=50 IC/IB=100 IC/IB=200 0.6 0.4 -55°C +25°C +100°C +150°C 0.4 0.2 0.2 0 0.6 1m 10m 100m 1 10 0 100 10m 1m IC - Collector Current (A) VCE(sat) v IC 1 10 100 1.5 VCE=2V IC/IB=100 +100°C +25°C -55°C VBE(sat) - (V) hFE - Typical Gain 700 100m IC - Collector Current (A) VCE(sat) v IC 350 0 1.0 0.5 -55°C +25°C +100°C +150°C 0 1m 10m 100m 1 10 100 1m IC - Collector Current (A) hFE v IC 1.8 10m IC - 100m 1 10 100 Collector Current (A) VBE(sat) v IC 100 IC - Collector Current (A) VBE(on) - (V) VCE=2V 1.2 0.6 -55°C +25°C +100°C +150°C 0 1m 10m IC - 100m 1 10 Collector Current (A) VBE(on) v IC 100 10 1 100m 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100