HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs December 2001 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR (FLANGE) • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable JEDEC TO-262AA Description EMITTER This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. COLLECTOR GATE COLLECTOR (FLANGE) JEDEC TO-263AB COLLECTOR (FLANGE) PACKAGING AVAILABILITY GATE PART NUMBER PACKAGE BRAND HGTP20N35G3VL T0-220AB 20N35GVL HGT1S20N35G3VL T0-262AA 20N35GVL HGT1S20N35G3VLS T0-263AB 20N35GVL EMITTER Terminal Diagram NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A. N-CHANNEL ENHANCEMENT MODE COLLECTOR The development type number for this device is TA49076. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage At 10mA, R GE = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . . IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS o At L = 2.3mH, T C = +175 C . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 20 ±10 26 18 775 150 1.0 -40 to +175 260 6 UNITS V V A A V A A mJ W W/oC o C o C KV NOTE: May be exceeded if IGEM is limited to 10mA. ©2001 Fairchild Semiconductor Corporation HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL BVCES BVCER TEST CONDITIONS IC = 10mA, VGE = 0V IC = 10mA VGE = 0V RGE = 1kΩ MIN TYP MAX UNITS TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V TC = -40oC 320 355 390 V TC = +175oC 300 340 375 V TC = +25oC 315 345 375 V TC = -40oC 315 350 390 V Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V TC = +25oC - 3.7 - V Gate Charge QG(ON) IC = 10A VGE = 5V VCE = 12V TC = +25oC - 28.7 - nC Collector-Emitter Clamp Bkdn. Voltage BVCE(CL) IC = 10A RG = 0Ω TC = +175oC 325 360 395 V IC = 10mA TC = +25oC 20 32 - V VCE = 250V TC = +25oC - - 5 µA VCE = 250V TC = +175oC - - 250 µA IC = 10A VGE = 4.5V TC = +25oC - 1.3 1.6 V TC = +175oC - 1.25 1.5 V TC = +25oC - 1.6 2.8 V TC = +175oC - 1.9 3.5 V TC = +25oC 1.3 1.8 2.3 V Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage BVECS ICES VCE(SAT) IC = 20A VGE = 5.0V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance R1 TC = +25oC - 1.0 - kΩ Gate-Emitter Resistance R2 TC = +25oC 10 17 25 kΩ Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load Inductive Use Test Thermal Resistance ©2001 Fairchild Semiconductor Corporation IGES VGE = ±10V ±400 ±590 ±1000 µA BVGES IGES = ±2mA ±12 ±14 - V - 15 30 µs TC = +175oC 18 - - A TC = +25oC 26 - - A - - 1.0 tD(OFF)I + tF(OFF)I ISCIS RθJC IC = 10A, RG = 25Ω, L = 550µH, RL = 26.4Ω, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 0Ω o C/W HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC 100 50 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V 40 30 TC = +175oC TC = +25oC 20 o TC = -40 C 10 0 1 3 2 4 5 VGE=10V 5.0V 60 4.5V 40 4.0V 3.5V 20 3.0V 2.5V 0 6 0 ICE , COLLECTOR EMITTER CURRENT (A) ICE , COLLECTOR EMITTER CURRENT (A) VGE = 4.5V 20 VGE = 4.0V 10 0 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 4 FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE ©2001 Fairchild Semiconductor Corporation 4 6 8 10 FIGURE 2. SATURATION CHARACTERISTICS VGE = 5.0V 1 2 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TC = +175oC 0 6.0V 5.5V FIGURE 1. TRANSFER CHARACTERISTICS 30 6.5V 80 VGE, GATE-TO-EMITTER VOLTAGE (V) 40 7V 50 -40oC VGE = 4.5V +25oC 40 +175oC 30 20 10 0 0 1 2 3 4 5 VCE(SAT) , SATURATION VOLTAGE (V) FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) 2.2 ICE = 10A VCE(SAT) , SATURATION VOLTAGE (V) VCE(SAT) , SATURATION VOLTAGE (V) 1.4 VGE = 4.0V 1.3 VGE = 4.5V 1.2 VGE = 5.0V 1.1 ICE = 20A 2.1 VGE = 4.0V 2.0 1.9 VGE = 4.5V 1.8 1.7 4.5V VGE = 5.0V 1.6 1.5 +25 -25 +125 +75 +175 -25 25 VGE = 5.0V 20 PACKAGE LIMITED 15 10 5 0 +50 +75 +100 +125 +150 +175 TC, CASE TEMPERATURE (oC) FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation +75 +125 +175 FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE VTH, NORMAILZED THRESHOLD VOLTAGE ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE +25 +25 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) 1.2 ICE = 1mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -25 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) 18 VCL= 300V, RGE = 25Ω, VGE = 5V, L= 550µH 104 VECS = 20V t(OFF)I, TURN OFF TIME (µs) LEAKAGE CURRENT (µA) 105 103 102 101 VCES = 250V 100 10-1 16 ICE = 6A, RL= 50Ω 14 ICE =10A, RL= 30Ω 12 ICE =15A, RL= 20Ω 10 +25 +75 +50 +100 +125 +150 +175 +25 TJ , JUNCTION TEMPERATURE (oC) +125 +150 FIGURE 10. TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE VGE = 5V 1200 VGE = 5V 40 1000 +25oC 35 +175 TJ , JUNCTION TEMPERATURE ( C) EAS , ENERGY (mJ) ICE , COLLECTOR-EMITTER CURRENT (A) +100 +75 o FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE 45 +50 30 25 20 +25oC 800 600 15 +175oC +175oC 400 10 5 0 2 4 6 8 10 INDUCTANCE (mH) FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT AS A FUNCTION OF INDUCTANCE ©2001 Fairchild Semiconductor Corporation 200 0 2 4 6 8 10 INDUCTANCE (mH) FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING ENERGY AS A FUNCTION OF INDUCTANCE HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC FREQUENCY = 1MHz C, CAPACITANCE (pF) 1400 1200 CIES 1000 800 600 COES 400 200 CRES 5 20 10 15 VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 0 12 6 10 5 VCE = 12V 8 4 6 4 2 2 1 0 0 0 25 20 10 FIGURE 14. GATE CHARGE WAVEFORMS 100 350 ICER = 10mA t1 0.2 PD 0.1 t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 10-2 BVCER , COLLECTOR-EMITTER BKDN VOLTAGE (V) 0.5 10-1 40 30 QG, GATE CHARGE (nC) FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 3 VCE = 8V VCE = 4V VGE, GATE-EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) 1600 345 TC = +25oC AND +175oC 340 SINGLE PULSE 335 10-5 10-3 10-1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 15. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE ©2001 Fairchild Semiconductor Corporation 101 0 2000 4000 6000 8000 10000 RGE , GATE-TO-EMITTER RESISTANCE (V) FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF GATE - EMITTER RESISTANCE HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B Spec Number Test Circuits RL 2.3mH VDD C RGEN = 25Ω RG L = 550µH C 1/RG = 1/RGEN + 1/RGE RGEN = 50Ω DUT G DUT G 5V - 10V E + VCC 300V RGE = 50Ω E FIGURE 17. USE TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4