HGTP3N60B3D, HGT1S3N60B3DS Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. The IGBT used is TA49192. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features • 7A, 600V TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode • Related Literature • TB334 “Guidelines for Soldering Surface Mount - Components to PC Boards Packaging JEDEC TO-220AB Formerly Developmental Type TA49193. E Ordering Information PART NUMBER PACKAGE COLLECTOR (FLANGE) BRAND HGTP3N60B3D TO-220AB G3N60B3D HGT1S3N60B3DS TO-263AB G3N60B3D C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S3N60B3DS9A. Symbol TO-263, TO-263AB C COLLECTOR (FLANGE) G G E E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTP3N60B3D, HGT1S3N60B3DS Rev. B HGTP3N60B3D, HGT1S3N60B3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP3N60B3D, HGT1S3N60B3DS UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 7.0 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 3.5 A Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG) 4.0 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 20 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 33.3 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 5 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V MIN TYP MAX UNITS 600 - - V TC = 25oC - - 250 µA TC = 150oC - - 2.0 mA TC = 25oC - 1.8 2.1 V TC = 150oC - 2.1 2.5 V 4.5 5.4 6.0 V - - ±250 nA 18 - - A IC = 250µA, VCE = VGE VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 82Ω, VGE = 15V L = 500µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 7.9 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 18 22 nC VGE = 20V - 21 25 nC - 18 - ns - 16 - ns - 105 - ns - 70 - ns - 66 75 µJ - 88 160 µJ On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Qg(ON) td(ON)I trI td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 1) EOFF ©2001 Fairchild Semiconductor Corporation IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH Test Circuit (Figure 19) HGTP3N60B3D, HGT1S3N60B3DS Rev. B HGTP3N60B3D, HGT1S3N60B3DS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 1) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS - 16 - ns - 18 - ns - 220 295 ns - 115 175 ns - 130 140 µJ - 210 325 µJ IEC = 3A - 2.0 2.5 V IEC = 1A, dIEC/dt = 200A/µs - - 22 ns IEC = 3A, dIEC/dt = 200A/µs - - 28 ns IGBT - - 3.75 oC/W 3.0 oC/W IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH Test Circuit (Figure 19) Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 7 VGE = 15V 6 5 4 3 2 1 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 20 TJ = 150oC, RG = 82Ω, VGE = 15V L = 500µH 18 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTP3N60B3D, HGT1S3N60B3DS Rev. B HGTP3N60B3D, HGT1S3N60B3DS TJ = 150oC, RG = 82Ω, L = 1mH, V CE = 480V 100 TC VGE 75oC 15V 75oC 10V 110oC 15V 110oC 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 1 fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 3.75oC/W, SEE NOTES 1 3 2 5 4 7 6 8 16 45 VCE = 360V, RG = 82Ω, TJ = 125oC 14 40 ISC 12 35 10 30 25 8 tSC 20 6 4 10 11 12 TC = -55oC 10 TC = 150oC 8 6 TC = 25oC 4 2 0 0 1 2 3 4 5 6 7 8 15 15 9 10 30 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 25 TC = -55oC 20 15 TC = 150oC 10 TC = 25oC 5 0 0 1 2 3 5 4 6 7 8 9 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 0.7 0.6 RG = 82Ω, L = 1mH, VCE = 480V 0.6 EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 13 VGE , GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) 14 12 ISC , PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) 200 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves TJ = 25oC, TJ = 150oC, VGE = 10V 0.5 0.4 0.3 0.2 0.1 VGE = 15V, TJ = 150oC, TJ = 25oC 0 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 8 RG = 82Ω, L = 1mH, VCE = 480V 0.5 TJ = 150oC; VGE = 10V OR 15V 0.4 0.3 0.2 0.1 TJ = 25oC; VGE = 10V OR 15V 0 1 2 3 4 5 6 7 8 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTP3N60B3D, HGT1S3N60B3DS Rev. B HGTP3N60B3D, HGT1S3N60B3DS Typical Performance Curves Unless Otherwise Specified (Continued) 80 45 RG = 82Ω, L = 1mH, VCE = 480V 70 40 TJ = 25oC, TJ = 150oC, VGE = 10V trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 82Ω, L = 1mH, VCE = 480V 35 30 25 20 15 60 TJ = 25oC AND TJ = 150oC, VGE = 10V 50 40 TJ = 25oC, TJ = 150oC, VGE = 15V 30 20 TJ = 25oC, TJ = 150oC, VGE = 15V 10 1 2 4 3 5 6 10 8 7 1 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 140 6 5 8 7 RG = 82Ω, L = 1mH, V CE = 480V RG = 82Ω, L = 1mH, VCE = 480V 225 TJ = 150oC, VGE = 15V 200 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 4 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 250 175 TJ = 150oC, VGE = 10V 150 125 TJ = 25oC, VGE = 15V 120 TJ = 150oC, VGE = 10V OR 15V 100 80 TJ = 25oC, VGE = 10V OR 15V 100 TJ = 25oC, VGE = 10V 75 60 1 3 2 5 4 7 6 8 1 3 2 4 5 7 6 8 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 15 30 VGE , GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 3 2 ICE , COLLECTOR TO EMITTER CURRENT (A) TC = 25oC PULSE DURATION = 250µs 25 TC = -55oC 20 15 TC = 150oC 10 5 IG(REF) = 1mA, RL = 171Ω, TC = 25oC 12 9 6 VCE = 200V VCE = 400V VCE = 600V 3 0 0 5 6 7 8 9 10 11 12 13 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 14 15 0 5 10 15 20 25 Qg , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTP3N60B3D, HGT1S3N60B3DS Rev. B HGTP3N60B3D, HGT1S3N60B3DS Typical Performance Curves Unless Otherwise Specified (Continued) 500 FREQUENCY = 1MHz C, CAPACITANCE (pF) 400 CIES 300 200 COES 100 CRES 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.5 0.2 10-1 t1 0.1 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 15 30 12 t, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = 25oC, dIEC/dt = 200A/µs 150oC 9 6 25oC -55oC 3 25 trr 20 ta 15 10 tb 5 0 0 0.5 1.0 1.5 2.0 2.5 VEC , FORWARD VOLTAGE (V) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP ©2001 Fairchild Semiconductor Corporation 3.0 0 0.5 1 2 3 4 IEC , FORWARD CURRENT (A) FIGURE 18. RECOVERY TIME vs FORWARD CURRENT HGTP3N60B3D, HGT1S3N60B3DS Rev. B HGTP3N60B3D, HGT1S3N60B3DS Test Circuit and Waveforms HGTP3N60B3D 90% 10% VGE EON EOFF VCE L = 1mH 90% RG = 82Ω DUT + - ICE VDD = 480V FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT 10% td(OFF)I tfI trI td(ON)I FIGURE 20. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26™” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (I CE = 0). HGTP3N60B3D, HGT1S3N60B3DS Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4