HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features • 14A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB (ALTERNATE VERSION) COLLECTOR (FLANGE) E C G Formerly Developmental Type TA49191. Ordering Information PART NUMBER PACKAGE BRAND JEDEC TO-263AB HGTP7N60B3D TO-220AB ALT G7N60B3D HGT1S7N60B3DS TO-263AB G7N60B3D COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S7N60B3DS9A. E Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTP7N60B3D, HGT1S7N60B3DS Rev. B HGTP7N60B3D, HGT1S7N60B3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES ALL TYPES UNITS 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 14 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 A Average Rectified Forward Current at TC = 152oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 6 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 56 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W 0.476 W/ oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 2 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 12 µs Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50Ω . Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I TEST CONDITIONS MIN TYP MAX UNITS 600 - - V - - 100 µA - - 3.0 mA - 1.8 2.1 V - 2.1 2.4 V 3.0 5.1 6.0 V - - ±100 nA VCE = 480V 42 - - A VCE = 600V 35 - - A IC = IC110, VCE = 0.5 BVCES - 7.7 - V IC = IC110, VCE = 0. 5BVCES VGE = 15V - 23 28 nC VGE = 20V IC = 250µA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 50Ω, VGE = 15V, L = 100µH - 30 37 nC IGBT and Diode Both at TJ = 25oC, ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG = 50Ω, L = 2mH, - 26 - ns - 21 - ns Test Circuit (Figure 19) - 130 160 ns Current Fall Time tfI - 60 80 ns Turn-On Energy EON - 160 200 µJ Turn-Off Energy (Note 3) EOFF - 120 200 µJ ©2001 Fairchild Semiconductor Corporation HGTP7N60B3D, HGT1S7N60B3DS Rev. B HGTP7N60B3D, HGT1S7N60B3DS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I TEST CONDITIONS IGBT and Diode Both at TJ = 150oC ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG = 50Ω, L = 2mH, Test Circuit (Figure 19) MIN TYP MAX UNITS - 24 - ns - 22 - ns - 230 295 ns Current Fall Time tfI - 120 175 ns Turn-On Energy EON - 310 350 µJ Turn-Off Energy (Note 3) EOFF - 350 500 µJ Diode Forward Voltage VEC IEC = 7A - 1.85 2.2 V IEC = 7A, dIEC/dt = 200A/µs - - 37 ns IEC = 1A, dIEC/dt = 200A/µs - - 32 ns IGBT - - 2.1 oC/W Diode - - 3.0 oC/W Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 16 VGE = 15V 14 12 10 8 6 4 2 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 50 TJ = 150oC, RG = 50Ω, VGE = 15V 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTP7N60B3D, HGT1S7N60B3DS Rev. B HGTP7N60B3D, HGT1S7N60B3DS TJ = 150oC, RG = 50Ω, L = 2mH, VCE = 480V 100 TC VGE 75oC 75oC 110oC 110oC 15V 10V 15V 10V 10 f MAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 2.1oC/W, SEE NOTES 1 1 2 3 4 5 6 8 10 18 14 80 ISC 10 60 6 2 10 15 11 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250µs 25 20 TC = 150oC 15 TC = 25oC 10 5 0 1 2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (µJ) EON , TURN-ON ENERGY LOSS (µJ) TJ = 150oC, VGE = 10V TJ = 150oC, VGE = 15V TJ = 25oC, VGE = 10V TJ = 25oC, VGE = 15V 400 0 1 3 5 7 9 11 13 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 20 15 40 30 TC = 150oC TC = -55oC 20 TC = 25oC 10 0 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 15V 0 1000 RG = 50Ω, L = 2mH, VCE = 480V 800 14 15 1 2 3 5 7 4 6 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE 1600 1200 13 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME DUTY CYCLE < 0.5%, VGE = 10V 0 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT TC = -55oC 40 tSC ICE, COLLECTOR TO EMITTER CURRENT (V) 30 100 VCE = 360V, RG = 50Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) 400 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves RG = 50Ω, L = 2mH, V CE = 480V 800 TJ = 150oC, VGE = 10V and 15V 600 400 200 TJ = 25oC, VGE = 10V and 15V 0 1 3 7 13 5 9 11 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTP7N60B3D, HGT1S7N60B3DS Rev. B HGTP7N60B3D, HGT1S7N60B3DS Typical Performance Curves 140 RG = 50Ω, L = 2mH, VCE = 480V RG = 50Ω, L = 2mH, V CE = 480V 120 50 TJ = 150oC, VGE = 10V 40 TJ = 25oC, VGE = 10V TJ = 25oC, VGE = 15V 30 20 10 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 60 Unless Otherwise Specified (Continued) TJ = 150oC, VGE = 15V 1 3 7 5 100 TJ = 150oC, VGE = 10V 80 TJ = 25oC, VGE = 10V 60 40 20 9 13 11 0 15 TJ = 25oC and 150oC, VGE = 15V 1 ICE , COLLECTOR TO EMITTER CURRENT (A) tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 120 200 TJ = 150oC, VGE = 15V TJ = 150oC, VGE = 10V 150 TJ = 25oC, VGE = 15V TJ = 150oC, VGE = 10V and 15V 80 3 5 7 TJ = 25oC, VGE = 10V and 15V 9 11 13 40 15 1 VGE,GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 15 TC = 25oC 16 TC = 150oC 8 TC = -55oC 8 10 12 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 5 7 9 11 13 15 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE = < 0.5% PULSE DURATION = 250µs VCE = 10V 24 3 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 6 15 100 ICE , COLLECTOR TO EMITTER CURRENT (A) 0 13 60 50 1 32 11 RG = 50Ω, L = 2mH, VCE = 480V TJ = 25oC, VGE = 10V 40 9 7 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT RG = 50Ω, L = 2mH, VCE = 480V 100 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 250 3 14 Ig(REF) = 0.758mA, RL = 86Ω, TC = 25oC 12 VCE = 200V VCE = 600V 9 VCE = 400V 6 3 0 0 4 8 12 16 20 24 28 QG, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTP7N60B3D, HGT1S7N60B3DS Rev. B HGTP7N60B3D, HGT1S7N60B3DS Typical Performance Curves Unless Otherwise Specified (Continued) 1200 FREQUENCY = 1MHz C, CAPACITANCE (pF) 1000 CIES 800 600 400 COES 200 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 t1 PD 10-1 t2 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) 30 40 TJ = 25oC, dIEC/dt = 200A/µs trr 150oC tr, RECOVERY TIMES (ns) IEC, EMITTER TO COLLECTOR CURRENT (A) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE -55oC 10 5 25oC 1 0.5 25 20 ta 15 tb 10 5 1.0 1.5 2.0 2.5 3.0 VEC, EMITTER TO COLLECTOR VOLTAGE (V) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP ©2001 Fairchild Semiconductor Corporation 3.5 1 2 3 4 5 6 8 10 IEC, FORWARD CURRENT (A) FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT HGTP7N60B3D, HGT1S7N60B3DS Rev. B HGTP7N60B3D, HGT1S7N60B3DS Test Circuit and Waveforms L = 2mH 90% RHRD660 10% VGE EON EOFF RG = 50Ω VCE + - 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (I CE = 0). HGTP7N60B3D, HGT1S7N60B3DS Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4