HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet December 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Features This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit • Typical Internal Clamp Voltage = 410V at TJ = 25oC Formerly Developmental Type TA49360. PACKAGE • Logic Level Gate Drive • ESD Gate Protection • TJ = 175oC • Internal Series and Shunt Gate Resistors • 24V Reverse Battery Capability • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER • Ignition Energy = 340mJ at TJ (STARTING) = 25oC BRAND HGT1S14N41G3VLS TO-263AB 14N41GVL HGTP14N41G3VL TO-220AB 14N41GVL Packaging JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S14N41G3VLS9A COLLECTOR (FLANGE) G Symbol E COLLECTOR R1 JEDEC TO-220AB GATE E R2 C G EMITTER COLLECTOR (FLANGE) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1S14N41G3VLS, HGTP14N41G3VL UNITS Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 430 V Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 445 V Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 25 A at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 18 A Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V Inductive Switching Current at L = 3 mH, T C = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS 15 A at L = 3 mH, TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS 11.5 A Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS 340 mJ Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 136 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/oC Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG -55 to 175 oC Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ -55 to 175 oC Electrostatic Discharge Voltage HBM at 250pF, 1500Ω All Pin Configurations . . . . . . . . . ESD 5 kV Electrostatic Discharge Voltage MM at 200pF, 0Ω All Pin Configurations . . . . . . . . . . . . . ESD 2 kV Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. May be exceeded if I GEM is limited to 10mA. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS V Collector to Emitter Breakdown Voltage BVCER IC = 10mA, RG = 1kΩ, VGE = 0V, TJ = -40oC to 150oC (Figure 17) 380 410 430 Collector to Emitter Breakdown Voltage BVCES IC = 10mA, VGE = 0V, TJ = -40oC to 150oC 395 425 445 V - 3 - V Gate to Emitter Plateau Voltage Gate Charge Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Emitter to Collector Leakage Current Gate to Emitter Threshold Voltage Collector to Emitter On-State Voltage Collector to Emitter On-State Voltage VGEP QG(ON) BVCE(CL) BVECS ICES IECS VGE(TH) VCE(ON) VCE(ON) IC = 10A, VCE = 12V IC = 10A, VCE = 12V, VGE = 5V (Figure 16) IC = 15A, RG = 1kΩ IC = 10mA - 26 - nC 380 410 430 V 24 28 - V VCE = 350V, VGE = 0V (Figure 13) TJ = 25oC - - 40 µA TJ = 150oC - - 200 µA VCE = 15V, VGE = 0V TJ = 25oC - - 10 µA TJ = 150oC TJ = 25oC TJ = 150oC - - 50 µA - - 1 mA VEC = 24V, VGE = 0V (Figure 13) IC = 1mA, VCE = VGE (Figure 12) IC = 10A, VGE = 3.7V (Figures 3 to 9) IC = 6A, VGE = 4.0V (Figures 3 to 9) IC = 10A, VGE = 4.5V (Figures 3 to 9) IC = 14A, VGE = 5V (Figures 3 to 9) TJ = 25oC TJ = 150oC TJ = -40oC TJ = 25oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = 175oC - - 40 mA 1.3 1.8 2.2 V - 1.6 2.65 V - 1.7 2.75 V - 1.3 1.7 V - 1.25 1.6 V - 1.45 1.7 V - 1.55 1.8 V - 1.65 2.0 V - 1.8 2.3 V Gate Series Resistance R1 - 80 - Ω Gate to Emitter Resistance R2 10 18 26 kΩ ©2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Gate to Emitter Leakage Current Gate to Emitter Breakdown Voltage TEST CONDITIONS MIN TYP MAX UNITS IGES VGE = ±10V ±384 ±555 ±1000 µA BVGES IGES = ±5mA ±12 ±14 - V - 0.9 1.5 µs - 0.75 1.6 µs - 3.2 4.5 µs - 2.7 3.8 µs Current Turn-On Delay Time Resistive Load td(ON)I Current Turn-On Rise Time Resistive Load trI IC = VDD = 14V, R G = 1kΩ, VGE = 5V (Figure 14) IC = VDD = 14V, R G = 1kΩ, VGE = 5V (Figure 14) IC = IC = 11.5A, TJ = 25oC 6.5A, TJ = 150oC 11.5A, TJ = 25oC 6.5A, TJ = 150oC Current Turn-Off Time - Inductive Load td(OFF)I + tfI IC = 6.5A, RG = 1kΩ, VGE = 5V, L = 300µH, VDD = 300V, TJ = 150oC (Figure 14) - 9 20 µs Current Turn-Off Time - Resistive Load td(OFF)I + tfI IC = 6.5A, RG = 1kΩ, VGE = 5V, RL = 46Ω, VDD = 300V, TJ = 25oC (Figure 14) - 10 15 µs Inductive Use Test ISCIS Thermal Resistance RθJC (Figure 18) 60 RG = 1kΩ, VGE = 5V 52 ISCIS CAN BE LIMITED BY gfs AT VGE = 5V 44 36 28 TJ = 25oC 20 12 TJ = 150oC 4 40 80 120 160 200 A - - 1.1 oC/W ISCIS CAN BE LIMITED BY gfs AT V GE = 5V 32 24 TJ = 25oC 16 8 VGE = 3.7V 1.2 VGE = 4.5V VGE = 5.0V ICE = 6A 100 TJ = 150oC RG = 1kΩ, VGE = 5V 0 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 4.0V 175 TJ, JUNCTION TEMPERATURE (oC) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE ©2001 Fairchild Semiconductor Corporation A - 2 4 6 8 10 FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs. INDUCTA N C E 1.3 25 - - L, INDUCTANCE (mH) FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN AVALANCHE 1.0 -50 - 15 40 tAV, TIME IN AVALANCHE (µs) 1.1 11.5 Unless Otherwise Specified ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) Typical Performance Curves TC = 150oC L = 3mH, VG = 5V, RG = 1kΩ (Figures 1, 2) TC = 25oC 1.62 ICE = 10A 1.58 VGE = 4.0V 1.54 VGE = 3.7V 1.50 1.46 1.42 1.38 VGE = 5.0V 1.34 -50 VGE = 4.5V 25 100 175 TJ, JUNCTION TEMPERATURE (oC) FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL 40 Unless Otherwise Specified (Continued) DUTY CYCLE < 0.5%, TJ = 175oC PULSE DURATION = 250µs ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE = 5.0V 30 VGE = 4.5V 20 VGE = 3.7V 10 VGE = 4.0V 0 0 1 2 3 4 5 40 DUTY CYCLE < 0.5%, TJ = 150oC PULSE DURATION = 250µs 30 VGE = 4.5V 20 VGE = 3.7V VGE = 4.0V 10 0 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 4.5V VGE = 3.7V 20 VGE = 4.0V 10 1 0 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 5.0V 30 0 2 3 4 5 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs 40 1 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 50 VGE = 5.0V 60 DUTY CYCLE < 0.5%, TJ = -40oC PULSE DURATION = 250µs VGE = 5.0V 50 VGE = 4.5V 40 30 VGE = 3.7V 20 VGE = 4.0V 10 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 60 VGE TJ = 25oC 8.0V 50 5.0V 4.5V 40 4.0V 3.5V 30 3.0V 2.5V 20 10 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE ©2001 Fairchild Semiconductor Corporation 40 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 32 TJ = 150oC 24 TJ = 25oC 16 8 TJ = -40oC 0 1 2 3 4 5 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 10. TRANSFER CHARACTERISTIC HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Typical Performance Curves Unless Otherwise Specified (Continued) 2.2 VGE = 5V VGE(TH) , THRESHOLD VOLTAGE (V) ICE , DC COLLECTOR CURRENT (A) 28 24 20 16 12 8 4 0 25 50 75 100 125 150 ICE = 1mA VCE = VGE 2.0 1.8 1.6 1.4 1.2 1.0 -50 175 25 TC , CASE TEMPERATURE (oC) FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 16 ICE = 6.5A, VGE = 5V, RG = 1kΩ 14 VECS = 24V 1000 SWITCHING TIME (µs) LEAKAGE CURRENTS (µA) 10000 100 VCES = 300V 10 VCES = 250V RESISTIVE tOFF 12 10 INDUCTIVE tOFF 8 6 RESISTIVE tON 1 4 0.1 25 50 75 125 100 150 2 25 175 50 TJ, JUNCTION TEMPERATURE (oC) VGE, GATE TO EMITTER VOLTAGE (V) 8 FREQUENCY = 1MHz 2000 1600 CIES 1200 800 CRES COES 0 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation 100 125 150 175 FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE 2400 400 75 TJ , JUNCTION TEMPERATURE (oC) FIGURE 13. LEAKAGE CURRENT vs JUNCTION TEMPERATURE C, CAPACITANCE (pF) 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. DC COLLECTOR CURRENT vs CASE TEMPERATURE 0 100 25 IG(REF) = 1mA, RL = 1.25Ω, TJ = 25oC 6 VCE = 12V 4 2 VCE = 6V 0 0 8 16 24 32 40 48 56 QG, GATE CHARGE (nC) FIGURE 16. GATE CHARGE WAVEFORMS HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Typical Performance Curves Unless Otherwise Specified (Continued) BVCER , BREAKDOWN VOLTAGE (V) 412 TJ (oC) 408 ICER = 10mA -55 404 25 400 150 396 175 392 388 384 380 376 0 4 2 6 8 10 RG , GATE SERIES RESISTANCE (kΩ) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE 100 0.5 0.2 0.1 10-1 t1 0.05 PD 0.02 0.01 10-2 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms 3mH VDD R or L C LOAD C PULSE GEN RG DUT RG = 1kΩ G E G DUT + VDD - 5V E FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B