PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package VCES = 600V VCE(on) typ. = 2.15V G @VGE = 15V, IC = 5.0A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions D-PAK TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. Units 600 8.5 5.0 34 34 ±20 110 38 15 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case ) Thermal Resistance Parameter RθJC RθJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. Max. ––– ––– 0.3 (0.01) 3.3 50 ––– Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 8/30/99 IRG4RC10U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 14 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA — 2.15 2.6 IC = 5.0A VGE = 15V Collector-to-Emitter Saturation Voltage — 2.61 — IC = 8.5A See Fig.2, 5 V — 2.30 — IC = 5.0A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -8.7 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance 2.8 4.2 — S VCE = 100V, IC = 5.0A — — 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current — — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 15 22 IC = 5.0A 2.6 4.0 nC VCC = 400V See Fig. 8 5.8 8.7 VGE = 15V 19 — 11 — TJ = 25°C ns 116 240 IC = 5.0A, VCC = 480V 81 180 VGE = 15V, RG = 100Ω 0.08 — Energy losses include "tail" 0.16 — mJ See Fig. 9, 10, 14 0.24 0.36 18 — TJ = 150°C, 14 — IC = 5.0A, VCC = 480V ns 180 — VGE = 15V, RG = 100Ω 150 — Energy losses include "tail" 0.36 — mJ See Fig. 11, 14 7.5 — nH Measured 5mm from package 270 — VGE = 0V 21 — pF VCC = 30V See Fig. 7 3.5 — ƒ = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω, (See fig. 13a) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4RC10U 4.0 F or b ot h: 3.0 Load Current ( A ) T ria ng u la r w av e: D uty c ycle : 5 0% T J = 1 25 °C T A = 5 5°C Ga te drive as s p e cified I P ow e r D is s ip at i on = 1 .4 W Typ ic al F R -4 b oa rd m o u n t C lam p vo lta g e: 80% o f rate d S q u are w ave: 2.0 6 0% o f rate d v o lta g e I 1.0 Ide al d io des A 0.0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) TJ = 25 oC TJ = 150 oC 10 1 V GE = 15V 20µs PULSE WIDTH 0.1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 100 100 10 TJ = 150 o C TJ = 25 oC V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 12 13 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4RC10U 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 10 8 6 4 2 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH I C = 10 A 4.0 3.0 I C = 5.05 A A I C = 2.5 A 2.0 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10U 500 VGE , Gate-to-Emitter Voltage (V) 400 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 300 200 Coes 100 VCC = 400V I C = 5.0A 16 12 8 4 Cres 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 10 V CC = 480V V GE = 15V TJ = 25 ° C 0.26 I C = 5.0A 0.22 0.18 0.14 0.10 60 70 80 90 RG,,Gate Gate Resistance Resistance (Ohm) (Ω) RG 100 Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 8 12 16 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.30 50 4 QG , Total Gate Charge (nC) 100Ω RG = 100Ohm VGE = 15V VCC = 480V IC = 10 A 1 A IC = 5.05 A IC = 2.5 A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4RC10U RG TJ VCC 0.8 VGE 100 = 100Ω 100Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 1.0 0.6 0.4 0.2 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 0.0 0 2 4 6 8 10 1 12 Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current L 10 1000 Fig. 12 - Turn-Off SOA D .U .T. VC * 50V 100 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) RL = 0 - 480V 10 0 0V 480V 4 X I C@25°C 480µF 960V * Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax ) * Note: Due to the 5 0V pow e r supply, puls e w idth and inductor w ill incre as e to obta in rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 480V 6 www.irf.com IRG4RC10U 9 0% 1 0% VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.38 (.0 94 ) 2.19 (.0 86 ) 6.73 (.2 65) 6.35 (.2 50) -A1.2 7 (.050 ) 0.8 8 (.035 ) 5.46 (.2 15 ) 5.21 (.2 05 ) 1.1 4 (.045 ) 0.8 9 (.035 ) 0.58 (.0 23) 0.46 (.0 18) 4 6 .4 5 (.24 5) 5 .6 8 (.22 4) 6.2 2 (.245 ) 5.9 7 (.235 ) 1.02 (.0 40) 1.64 (.0 25) 1 2 10 .42 (.41 0) 9.40 (.3 70) 0 .5 1 (.02 0) M IN . -B1.5 2 (.0 60 ) 1.1 5 (.0 45 ) 3X 1 .1 4 (.04 5) 2 X 0 .7 6 (.03 0) 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (.01 0) 2 .28 (.09 0) 4.5 7 (.1 80 ) www.irf.com LEAD ASSIGNMENTS 3 M A M B L EA D AS NM EN TS 1 -SIG GATE 1 -2 G- A TE COLLECTOR 2 - D R A IN 3 - EMITTER 3 - S O U R CE 4 - COLLECTOR 4 - D R A IN 0.5 8 (.023 ) 0.4 6 (.018 ) N O TES : 1 D IM E N SIO N ING & TO L ER A NC IN G P ER AN S I Y 14.5 M , 19 82. 2 C O N TR O LL IN G D IM E N SIO N : IN C H. 3 C O N FO R M S TO JE DE C O U TL IN E TO -252 AA . 4 D IM E N SIO N S SH O W N A RE BE FO R E S O LD E R D IP , S O LD E R D IP M A X. +0.16 (.0 06 ). 7 IRG4RC10U Tape & Reel Information TO-252AA TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TR L 16.3 ( .64 1 ) 15.7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 12/98 8 www.irf.com