SANYO ISB-A27-0

Ordering number : EISB0005
ISB-A27-0
Ultrathin Miniature Package 4-channel
N-channel MOSFET Array
Overview
The ISB-A27-0 is a SANYO’S original SIP (System In Package) IC that includes four N-channel MOSFET devices.
They are mounted into one thin-and-small package by utilizing SANYO’s high-density mounting technology,
“Integrated System in Board (ISB)”.
The advantage using its ultrathin miniature package makes the ISB-A27-0 ideal for switching devices in small, lowpower circuits for cell phones and other portable equipment. It achieves significant reduction in the component
mounting area compared to discrete device implementations (approx 25% smaller than ECSP package).
Features
• Includes 4 identical N-channel MOSFET devices in a single package.
• 1.6 mm×1.6 mm×0.75 mm ultrathin, miniature package.
• 2.5V drive capability.
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-source voltage
VDSS
Gate-to-source voltage
VGSS
±10
V
Drain current
ID
0.15
A
Common to TR1, TR2, TR3, and TR4
When mounted on a specified board *
30
V
Allowable power dissipation
Pd max
0.33
W
Operating ambient temperature
Topr
-30 to +85
°C
Storage ambient temperature
Tstg
-40 to +125
°C
* Specified board: 40mm×25mm×0.8mm FR4 board
• ISB is a registered trademark of SANYO Electric Co., Ltd.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
92706 / 42806HKIM No.0005-1/4
ISB-A27-0
Electrical Characteristics
Overall Operating Characteristics at Ta = 25°C, common to TR1, TR2, TR3, and TR4
Parameter
Symbol
Ratings
Conditions
min
Drain-to-source breakdown voltage
Unit
typ
max
VDSS
ID=1mA, VGS=0V
30
V
Drain-to-source cutoff current
IDSS
VDS=30V, VGS=0V
10
µA
Gate-to-source leakage current
IGSS
VGS=±8V, VDS=0V
±10
µA
Gate-to-source cutoff current
VGS(off)
VDS=10V, ID=100µA
1.3
V
Drain-to-source on resistance
RDS(on)1
ID=80mA, VGS=4V
3.4
11
Ω
RDS(on)2
ID=40mA, VGS=2.5V
4.2
14
Ω
RDS(on)3
ID=10mA, VGS=1.5V
6.7
20
Ω
Package Dimensions
unit : mm
0.75
1.6
1.6
MIN 0.5
0.15
0.5
1
2
3
4
5
6
7
8
9
0.23
0.3
0.8
0.5
0.5 0.3
0.3 0.5
0.1
0.15
0.8
0.30
Equivalent Circuit
Drain
c
e
TR2
TR3
TR4
Body Diode
Gate Protection Diode
TR1
k
i
g
d
Source
(Common)
Gate
h
f
j
No.0005-2/4
ISB-A27-0
ID - VDS
120
Drain Current, ID - mA
Static Drain-to-Source
On-State Resistance, RDS(on) - Ω
3 .0
4.0
V
140
100
VGS=1.5V
80
60
40
20
Ta=25°C
10
8
80mA
6
ID=40mA
4
2
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS - V
0
1.0
2
4
6
8
10
Gate-to-Source Voltage, VGS - V
ISB00020
ID - VGS
ISB00021
RDS(on) - ID
10
75
°C
400
Ta
=
25
°C
450
Static Drain-to-Source
On-State Resistance, RDS(on) - Ω
-25
°C
500
Drain Current, ID - mA
RDS(on) - VGS
12
V
2.0
2.5
V
Ta=25°C
V
160
350
300
250
200
150
25
50
C
5°
=7
a
T
°C
-2
5°
C
100
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS - V
5
Ta=75°C
3
25°C
-25°C
2
1.0
0.01
3.0
2
3
5
7
2
0.1
3
5
Drain Current, ID - A
ISB00022
RDS(on) - ID
10
7
7 1.0
ISB00023
RDS(on) - ID
100
VGS=2.5V
VGS=1.5V
7
Static Drain-to-Source
On-State Resistance, RDS(on) - Ω
Static Drain-to-Source
On-State Resistance, RDS(on) - Ω
7
Ta=75°C
5
25°C
-25°C
3
2
1.0
0.01
2
3
5
7
2
0.1
3
5
Drain Current, ID - A
10
7
5
3
2
1.0
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD - V
1.2
ISB00026
25°C
10
Ta=75°C
7
5
-25°C
3
2
2
3
5
7
0.01
2
3
5
7 0.1
ISB00025
RDS(on) - Ta
7
Static Drain-to-Source
On-State Resistance, RDS(on) - Ω
-25
Ta
3
2
°C
=7
5°C
100
7
5
2
Drain Current, ID - A
Ta=25°C
25°
C
Forward Current, IF - mA
1.0
ISB00024
3
2
3
1.0
0.001
7
IF - VSD
1000
7
5
5
6
8
5V
=2.
S
G
V
A,
V
40m
=4.0
I D=
, VGS
A
80m
I D=
4
3
2
1
0
-60
-40
-20
0
20
40
60
80
100
Ambient Temperature, Ta -°C
120
140
160
ISB00027
No.0005-3/4
ISB-A27-0
PD max - Ta
0.40
Power Dissipation, PD max - W
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
-40
-20
0
20
40
60
Ambient Temperature,Ta -°C
80
100
ISB00028
<Manufactured by>
ISB Business Unit, Electronic Device Company,
Component & Device Group, SANYO Electric Co., Ltd.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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Any and all information described or contained herein are subject to change without notice due to
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No.0005-4/4