IXYS IXUC60N10

ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET
IXUC 60N10
VDSS = 100 V
ID25 = 60 A
Ω
RDS(on) = 16.4 mΩ
ISOPLUS220TM
Electrically Isolated Back Surface
ISOPLUS 220TM
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
100
V
VGS
Continuous
±20
V
ID25
TC = 25°C; Note 1
60
A
ID90
TC = 90°C, Note 1
45
A
IS25
TC = 25°C; Note 1, 2
60
A
IS90
TC = 90°C, Note 1, 2
45
A
ID(RMS)
Package lead current limit
45
A
EAS
TC = 25°C
tlb
mJ
PD
TC = 25°C
150
W
-55 ... +175
°C
TJM
175
°C
Tstg
-55 ... +150
°C
300
°C
2500
V~
TJ
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute
FC
Mounting force
11 ... 65 / 2.4 ...11
2
Weight
N/lb
g
G
D
S
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Trench MOSFET
- very low RDS(on)
- fast switching
- usable intrinsic reverse diode
l Low drain to tab capacitance(<15pF)
l Unclamped Inductive Switching (UIS)
rated
Applications
Automotive 42V systems
- electronic switches to replace relays
and fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
l Power supplies
- DC - DC converters
- Solar inverters
l Battery powered systems
- choppers or inverters for motor control
in hand tools
- battery chargers
l
Symbol
Test Conditions
RDS(on)
VGS = 10 V, ID = 45 A, Note 3
VGS = 10 V, ID = ID90, TJ = 125°C Note 3
VGS(th)
VDS = VGS, ID = 1 mA
IDSS
VDS = VDSS
VGS = 0 V
IGSS
VGS = ±20 VDC, VDS = 0
© 2002 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
12.8
33
2
TJ = 25°C
TJ = 125°C
16.4 mΩ
mΩ
4
V
10
µA
mA
±200
nA
0.2
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
98900 (2/02)
IXUC 60N10
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
110
Qg(on)
Qgs
VGS = 10 V, VDS = 80 V, ID = 25 A
Qgd
td(on)
tr
VGS = 10 V, VDS = 40 A
td(off)
ID = 90 A, RG = 4.7 Ω
nC
18
nC
94
nC
35
ns
85
ns
150
ns
70
ns
tf
1
RthJC
0.30
RthCH
Source-Drain Diode
ISOPLUS220 OUTLINE
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VSD
IF = 30 A, VGS = 0 V
Note 3
0.8
trr
IF = 75 A, di/dt = -200 A/µs, VDS = 30 V
80
1.3
V
ns
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025