INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 November 1997 MIL-PRF-19500/464C 5 August 1997 SUPERSEDING MIL-S-19500/464B 25 May 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N5685 AND 2N5686, JAN, JANTX AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, similar to TO-3. 1.3 Maximum ratings. TC = +125°C, unless otherwise specified. PT 1/ TC = +25°C 2N5685 2N5686 PT 1 TC = +100°C VCBO VCE VEB O O IB IC TJ and TSTG RθJC W W V dc V dc V dc A dc A dc °C °C/W 300 300 171 171 60 60 60 60 5 5 15 15 50 50 -55 to +200 -55 to +200 .584 .584 1/ Between TC = +25°C and TC = +200°C linear derating factor 1.715 W/°C. 1.4 Primary electrical characteristics. hFE2 1/ VCE = 2 V dc IC = 25 A dc Min 2N5685 2N5686 15 15 Max hFE3 1/ VBE(sat)) 1/ VCE(sat)1 1/ VCE(sat)2 1/ VCE = 5 V dc IC = 50 A dc IC = 25 A dc IB = 2.5 A dc IC = 25 A dc IB = 2.5 A dc IC = 50 A dc IB = 10 A dc V dc Min Max V dc Min Max V dc Min Max Min 60 60 Max 2.0 2.0 5 hfe VCB = 10 V dc IE = 0 1 MHz ≤ f ≤ MHz VCE = 5 V dc IC = 10 A dc f = 1 kHz Max Min 1,200 1,200 15 15 Max toff ton Min pF 2N5685 2N5686 1/ Pulsed (see 4.5.1). 5.0 5.0 Switching (see table I and figure 2 herein) Cobo Min 1.0 1.0 Max µs 1.5 1.5 Min Max µs 3.0 3.0 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/464C 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in section 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Building 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750 and MIL-PRF-19500. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 2 MIL-PRF-19500/464C Symbol CH LD CD PS PS1 HT LL L1 MHD MHS HR HR1 Inches Millimeters Min Max Min Max .250 .057 --.420 .205 .060 .312 --.151 1.177 .495 .131 .655 .450 .063 .875 .440 .225 .135 .500 .050 .165 1.197 .525 .188 .675 6.35 1.45 --10.67 5.21 1.52 7.92 --3.84 29.90 12.57 3.33 16.64 11.43 1.60 22.23 11.18 5.72 3.43 12.70 1.27 4.19 30.40 13.34 4.78 17.15 Notes 4, 6 3 3 4, 6 4, 6 3 S1 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement will be made at seating plane. 4. Two leads. 5. Collector shall be electrically connected to the case. 6. LD applies between L1 and LL. Diameter is uncontrolled in L1. FIGURE 1. Physical dimensions. 3 MIL-PRF-19500/464C 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2 Classification of inspection. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.3). b. Screening (see 4.4). c. Conformance inspection (see 4.5). 4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.4 Screening (JANTX and JANTXV levels). Screening shall be in accordance with appendix E, table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table IV of MIL-PRF-19500) Measurement JANTX and JANTXV levels only 11 hFE2 and ICEX 12 See 4.3.1 13 ∆ICEX = 100 percent of initial value or100 µA dc, whichever is greater; ∆hFE2 = 25 percent of initial value; subgroup 2 of table I herein. 4.4.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = +187.5°C ±12.5°C; VCB ≥ 20 V dc, TA ≤ +100°C. 4.5 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 appendix E, table V, and table I herein. 4.5.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, appendix E table V, and table I herein. Electrical measurements (end-points) shall be in accordance with the applicable steps of table II, herein. 4.5.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in MIL-PRF-19500, appendix E, table VIB (JANTX and JANTXV),and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.5.2.1 Group B inspection, appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B3 1037 2,000 cycles, VCE ≥ 10 V dc, PT = 170 W, ∆TJ between cycles ≥ +100°C. 2037 11 devices, ACC = 0. 3131 See 4.5.2. B5 4.5.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in MIL-PRF-19500, appendix E, table VII and as follows . Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4 MIL-PRF-19500/464C 4.5.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds, t = 15 s. C6 1037 6,000 cycles, VCE ≥ 10 V dc, PT = 170 W, ∆TJ between cycles ≥ +100°C. 4.6 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.6.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.6.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power applications shall be 1 A dc. b. Collector to emitter voltage magnitude shall be ≥ 5 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit shall be RθJC = .584°C/W. 5 MIL-PRF-19500/464C TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Breakdown voltage collector to emitter 3011 Bias condition D; IC = 100 mA dc, pulsed (see 4.5.1) V(BR)CEO 2N5685 2N5686 Collector to emitter cutoff current V dc V dc 60 80 3041 2N5685 2N5686 Bias condition D ICEO 500 µA dc 500 µA dc 1 mA dc 2.0 2.0 mA dc mA dc 2.0 V dc 2.0 V dc 1.0 V dc 5.0 V dc VCE = 30 V dc VCE = 40 V dc Collector to emitter cutoff current 3041 Bias condition A; VBE = 1.5 V dc 2N5685 2N5686 ICEX1 VCE = 60 V dc Emitter to base cutoff current 3061 Collector to base cutoff current 3036 VCE = 80 V dc Bias condition D; VBE = 5 V dc, IC = 0 Bias condition D IEBO ICBO1 2N5685 2N5686 Base to emitter saturated 3066 VCB = 60 V dc VCB = 80 V dc VBE(sat) Test condition A; IC = 25 A dc, Base to emitter non-saturated 3066 IB = 2.5 A dc, pulsed (see 4.5.1) Collector to emitter saturated voltage 3071 Test condition B; IC = 25 A dc, Collector to emitter saturated voltage 3071 Forward current transfer ratio 3076 VCE = 2 A dc, pulsed (see 4.5.1) IC = 25 A dc; IB = 10 A dc pulsed (see 4.5.1) IC = 50 A dc; IB = 10 A dc, pulsed (see 4.5.1) VCE = 2 V dc; IC = 5 A dc, pulsed (see 4.5.1) See footnote at end of table. 6 VBE VCE(sat)1 VCE(sat)2 hFE1 30 MIL-PRF-19500/464C TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Unit Min Max 15 60 Subgroup 2 - Continued Forward current transfer ratio 3076 Forward current transfer ratio 3076 VCE = 2 V dc; IC = 25 A dc, pulsed (see 4.5.1) hFE2 VCE = 2 V dc; IC = 50 A dc, pulsed (see 4.5.1) hFE3 2 Subgroup 3 High temperature operation: TA = +150°C Collector to emitter cutoff current 3041 Bias condition A; VBE = 1.5 V dc 2N5685 2N5686 1.5 µs 3.0 µs 2.0 µs VCE = 80 V dc 3076 7 TA = -55°C hFE4 VCE = 2.0 V dc; IC = 25 A dc, pulsed (see 4.5.1) Subgroup 4 Pulse response mA dc VCE = 60 V dc Low temperature operation: Forward current transfer ratio 5 ICEX2 3251 Test condition A, except test circuit and pulse requirements (see figure 2 herein) Turn-on time ton VCC = 30 V dc; IC = 25 A dc, Turn-off time IB1 = 2.5 A dc toff Storage time VCC = 30 V dc; IC = 25 A dc, IB1 = - IB2 = 2.5 A dc Magnitude of common emitter small-signal shortcircuit forward-current transfer ratio ts 3306 VCC = 30 V dc; IC = 25 A dc, IB1 = - IB2 = 2.5 A dc VCE = 10 V dc; IC = 5 A dc, f = 1 MHz See footnote at end of table. 7 |hfe| 2.0 20 MIL-PRF-19500/464C TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 4 - Continued Small-signal short-circuit forward-current transfer ratio 3206 Open circuit output capacitance 3236 VCE = 5 V dc; IC = 10 A dc, f = 1 MHz VCB = 10 V dc; IE = 0, 0.1 MHz ≤ f ≤ 1 MHz Subgroup 5 Safe operating area (continuous dc) 3051 TC = +25°C; t = 1 s, 1 cycle (see figures 3 and 4) Test 1 VCE = 6 V dc; IC = 50 A dc Test 2 VCE = 30 V dc; IC = 10 A dc Test 3 VCE = 50 V dc; IC = 560 mA dc 2N5686 Safe operating area (switching) 3053 VCE = 60 V dc; IC = 640 mA dc Load condition C (unclamped inductive load) (see figure 5) Test 1 TC = +25°C duty cycle ≤ 10 percent RS = 0.1 Ω; tr = tf ≤ 500 ns tp approximately 5 ms (vary to obtain IC); RBB1 = 10Ω; VBB1 = 20 V dc; RBB2 = ∞; VBB2 = 0 V; VCC = 50 V dc; Test 2 IC = 20 A dc; L = 1 mH; Sanford Miller CK - 50, 50 A .002 Ω (or equivalent) tp approximately 5 ms (vary to obtain IC); RBB1 = 100 Ω; VBB1 = 10 V dc; RBB2 = ∞; VBB2 = 0 V; VC = 50 V dc; IC = 1.5 V dc; L = 80 mH; (2 each signal transformer CH06, 6A) 0.4 Ω (or equivalent) See footnote at end of table. 8 hfe Cobo 15 1,200 pF MIL-PRF-19500/464C TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions Subgroup 5 - Continued Safe operating area (switching) 3053 Clamped inductive load (see figures 6 and 7) TA = +25°C; VCC = 50 V dc 2N5685 Clamp voltage = 60 V dc 2N5686 Clamp voltage = 80 V dc Electrical measurements See table II, steps 1 and 3. 1/ For sampling plan, see MIL-PRF-19500. 9 Symbol Limit Min Unit Max MIL-PRF-19500/464C TABLE II. Groups A, B, and C electrical end-point measurements. 1/ 2/ Step Inspection MIL-STD-750 Method 1. Collector to emitter cutoff current 3041 2N5685 2N5686 2. Collector to emitter cutoff current Symbol Conditions Bias condition A, VBE = 1.5 V dc Limit Min Unit Max ICEX1 500 µA dc ICEX2 5 mA dc VCE = 60 V dc VCE = 80 V dc 3041 2N5685 2N5686 Bias condition A, VBE = 1.5 V dc TA = +150°C VCE = 60 V dc VCE = 80 V dc 3. Forward-current transfer ratio 3076 VCE = 2.0 V dc IC = 25 A dc pulsed (see 4.5.1) hFE2 4. Forward-current transfer ratio 3076 VCE = 2.0 V dc IC = 25 A dc pulsed (see 4.5.1) ∆hFE2 5. Thermal response 3131 IC = 25 A dc, 15 60 ± 25 percent of initial value. VBE 1/ The electrical measurements for appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1 and 3. b. Subgroup 3, see table II herein, steps 2, 4, and 5. c. Subgroup 6, see table II herein, steps 2 and 4. 2/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1 and 3. b. Subgroup 3, see table II herein, steps 1 and 3. c. Subgroup 6, see table II herein, steps 2, 4, and 5." 10 MIL-PRF-19500/464C TURN-ON (ton) TIME TEST CIRCUIT TURN-ON (toFF) TIME TEST CIRCUIT FIGURE 2. Switching time test circuits. 11 MIL-PRF-19500/464C FIGURE 3. Maximum safe operating area graph continuous dc (2N5685). 12 MIL-PRF-19500/464C FIGURE 4. Maximum safe operating area graph continuous dc (2N5686). 13 MIL-PRF-19500/464C FIGURE 5. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 14 MIL-PRF-19500/464C Procedure: 1. With switch S1 closed, set the specified test conditions. 2. Open S1. Device fails if clamp voltage not reached. 3. Perform specified end-point tests. 4. RS ≤ 0.1Ω, 12 W; 1percent tolerance maximum; (noninductive) 5. L = 2.0 mH (2 each 1 mH. Sanford Miller CK-50, 50 A). R = .002 Ω. FIGURE 6. Clamp inductive sweep test circuit. 15 MIL-PRF-19500/464C FIGURE 7. Safe operating area for switching between saturation and cutoff (clamped inductive load). 16 MIL-PRF-19500/464C 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. See MIL- PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from, Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - EC Air Force - 17 Preparing activity: DLA - CC (Project 5961-1829) Review activities: Army - MI Air Force - 13, 19, 70, 80, 85, 99 17 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/464C 2. DOCUMENT DATE (YYMMDD) 970805 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER, TYPES 2N5685 AND 2N5686, JANTX AND JANTXV 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) 7. DATE SUBMITTED (YYMMDD) (1) Commercial (2) AUTOVON (If applicable) 8. PREPARING ACTIVITY a. NAME Alan Barone c. ADDRESS (Include Zip Code) , Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, OCT 89 b. TELEPHONE (Include Area Code) (1) Commercial (2) AUTOVON (614)692-0510 850-0510 IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 AUTOVON 289-2340 Previous editions are obsolete 198/290