IRF JANTX2N6847

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Provisional Data Sheet No. PD-9.553B
®
HEXFET
JANTX2N6847
POWER MOSFET
JANTXV2N6847
[REF:MIL-PRF-19500/563]
[GENERIC:IRFF9220]
P-CHANNEL
Ω HEXFET
-200 Volt, 1.5Ω
Product Summary
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
Part Number
JANTX2N6847
JANTXV2N6847
BVDSS
-200V
RDS(on)
ID
1.5Ω
-2.5A
Features:
■
■
■
■
■
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
I D @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
JANTX2N6847, JANTXV2N6847 Units
-2.5
-1.6
-10
20
0.16
±20
-5.0
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
Lead Temperature
Weight
To Order
A
W
W/K ➄
V
V/ns
oC
g
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JANTX2N6847, JANTXV2N6847 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min.
Typ. Max. Units
-200
—
—
-0.22
—
—
—
—
-2.0
1.0
—
—
—
—
—
—
—
—
1.5
1.725
-4.0
—
-25
-250
V
V/°C
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
4.0
1.1
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
-100
100
15
3.2
8.4
50
70
40
50
—
LS
Internal Source Inductance
—
15.0
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
330
100
33
—
—
—
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
ns
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
VGS = -10V, ID = -1.6A➃
VGS = -10V, ID = -2.5A
VDS = V GS, ID = -250µA
VDS > -15V, IDS = -1.6A ➃
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -2.5A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = -100V, ID = -2.5A,
RG = 7.5Ω, VGS = -10V
see figure 10
nH
pF
Measured from the
Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = -25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
-2.5
-10
A
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, IS = -2.5A, VGS = 0V ➃
Tj = 25°C, IF = -2.5A, di/dt ≤ -100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD.
—
—
—
—
—
—
-4.8
300
3.0
V
ns
µC
Thermal Resistance
Parameter
Min. Typ. Max. Units
RthJC
Junction-to-Case
—
—
6.25
RthJA
Junction-to-Ambient
—
—
175
To Order
K/W
Test Conditions
Typical socket mount
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JANTX2N6847, JANTXV2N6847 Device
Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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JANTX2N6847, JANTXV2N6847 Device
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10b — Switching Time Waveforms
Fig. 10a — Switching Time Test Circuit
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JANTX2N6847, JANTXV2N6847 Device
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 13b — Basic Gate Charge Waveform
Fig. 13a — Gate Charge Test Circuit
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JANTX2N6847, JANTXV2N6847 Device
➀ Repetitive Rating; Pulse width limited by
➁
maximum junction temperature.
(see figure 11)
@ VDD = -50V, Starting T J = 25°C,
EAS = [0.5 * L * (IL2) * [BV DSS/(BV DSS-VDD)]
Peak IL = -2.5A, VGS = -10V, 25 ≤ RG ≤ 200Ω
➂ ISD ≤ -2.5A, di/dt ≤ -95A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ K/W = °C/W
W/K = W/°C
Case Outline and Dimensions — TO-205AF (TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
10/96
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