SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.92V (Typ.). D J 2 : trr=1.6ns(Typ.). A : CT=2.2pF (Typ.). 3 1 G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + D E 0.3+0.10/-0.05 _ 0.20 2.10 + G H 0.65 0.15+0.1/-0.06 J K CHARACTERISTIC SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA IFSM 2* A Power Dissipation PD 100 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Maximum (Peak) Reverse Voltage Surge Current (10ms) Storage Temperature Range H L C MAXIMUM RATING (Ta=25℃) N N K 1.30 0.00-0.10 0.70 _ 0.10 0.42 + L M N 0.10 MIN 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 USM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking Lot No. A3 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.61 - VF(2) IF=10mA - 0.74 - VF(3) IF=100mA - 0.92 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - 2.2 4.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2008.9. 8 Revision No : 4 1/2 KDS120 I F - VF 10 10 REVERSE CURRENT I R (µA) FORWARD CURRENT I F (mA) 10 IR - VR 3 2 10 10 C C Ta =-2 5 Ta Ta = 1 =2 5 10 0 C 10 -1 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=100 C 1 Ta=75 C 10 -1 Ta=50 C 10 -2 Ta=25 C 10 -3 20 0 FORWARD VOLTAGE VF (V) 40 t rr - I F REVERSE RECOVERY TIME t rr (ns) TOTAL CAPACITANCE C T (pF) 2.5 f=1MHz Ta=25 C 2.0 1.5 1.0 0.5 0.2 1 3 80 REVERSE VOLTAGE VR (V) C T - VR 0 60 10 30 100 200 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (V) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 50ns OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 0.1 I R IR E t rr PULSE GENERATOR (R OUT =50Ω) 2008. 9. 8 Revision No : 4 2/2