Transistors
IC
SMD Type
HEXFET Power MOSFET
KRF4905S
1 .2 7 -0+ 0.1.1
TO-263
Features
Advanced Process Technology
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
5 .2 8 -0+ 0.2.2
P-Channel
Fully Avalanche Rated
0.1max
+0.1
1.27-0.1
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
1 5 .2 5 -0+ 0.2.2
Fast Switching
2 .5 4 -0+ 0.2.2
Operating Temperature
8 .7 -0+ 0.2.2
175
5 .6 0
Surface Mount
+0.1
5.08-0.1
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Continuous Drain Current, VGS @ -10V,Tc = 25
Parameter
ID
-74
Continuous Drain Current, VGS @ -10V,Tc = 100
ID
-52
Pulsed Drain Current*1
IDM
-260
Power Dissipation Ta = 25
PD
3.8
Unit
A
W
200
Power Dissipation Tc = 25
Linear Derating Factor
1.3
W/
V
Gate-to-Source Voltage
VGS
20
Single Pulse Avalanche Energy*4
EAS
930
Avalanche Current *1
IAR
-38
A
Repetitive Avalanche Energy
EAR
20
mJ
Peak Diode Recovery dv/dt *2
dv/dt
-5
V/ns
TJ,TSTG
-55 to + 175
Operating Junction and Storage Temperature Range
mJ
Junction-to-Case
R
JC
0.75
/W
Junction-to-Ambient
R
JA
40
/W
*1Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-38A, di/dt
-270A/
s, VDD
V(BR)DSS,TJ
175
* 3 When mounted on 1" square PCB
*4 Starting TJ = 25 , L = 1.3mH,RG = 25 , IAS = -38A.
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Transistors
IC
SMD Type
KRF4905S
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Testconditons
VGS = 0V, ID =- 250 A
Min
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
VGS = -10V, ID = -38A*1
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 A
-2.0
gfs
VDS = -25V, ID = -38A*1
21
Drain-to-Source Leakage Current
IDSS
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Max
V
-0.05
TJ ID = -1mA,Reference to 25
V/
0.02
-4
VDS = -55V, VGS = 0V
-25
VDS = -44V, VGS = 0V, TJ = 150
-250
VGS = 20V
100
VGS = -20V
-100
Qg
ID = -38A
180
Gate-to-Source Charge
Qgs
VDS = -44V
32
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -10V,*1
Turn-On Delay Time
td(on)
VDD = -28V
18
tr
ID = -38A
99
td(off)
RG =2.5
61
Turn-Off Delay Time
tf
RD =0.72 *1
96
Internal Source Inductance
LS
Between lead,and center of die contact
7.5
Input Capacitance
Ciss
VGS = 0V
3400
Output Capacitance
Coss
VDS = -25V
1400
Reverse Transfer Capacitance
Crss
f = 1.0MHz
640
Body Diode)
V
A
nA
nC
86
Fall Time
Continuous Source Current
m
S
Total Gate Charge
Rise Time
Unit
-55
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Typ
ns
nH
pF
IS
-74
ISM
-260
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
-1.6
V
Reverse Recovery Time
trr
TJ = 25 , IF = -38A
89
130
ns
Reverse RecoveryCharge
Qrr
di/dt = 100A/
230
350
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
TJ = 25 , IS = -38A, VGS = 0V*1
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s*1