SEMICONDUCTOR KTA1266A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ・Low Noise : NF=1dB(Typ.). at f=1kHz. K ・Complementary to KTC3198A. J H Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -50 mA Collector Power Dissipation PC 400 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ 1 2 3 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M UNIT L RATING C F F SYMBOL Storage Temperature Range G D MAXIMUM RATING (Ta=25℃) CHARACTERISTIC E 1. EMITTER 2. COLLECTOR 3. BASE TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA VCE=-6V, IC=-2mA 70 - 400 hFE(2) VCE=-6V, IC=-150mA 25 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-10mA - - -1.1 V 80 - - MHz hFE(1) (Note) DC Current Gain fT Transition Frequency VCE=-10V, IC=-1mA Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 7.0 pF Base Intrinsic Resistance rbb' VCB=-10V, IE=1mA, f=30MHz - 30 - Ω Noise Figure NF VCE=-6V, IC=-0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB Note : hFE(1) Classification O:70～140, 2010. 1. 28 Y:120～240, Revision No : 1 GR:200～400 1/2 KTA1266A h FE - I C -240 3k DC CURRENT GAIN h FE COMMON EMITTER Ta=25 C -2.0 -200 -1.5 -160 -1.0 -120 -0.5 -80 IB =-0.2mA -40 0 -2 -3 -4 -5 -6 00 =1 -50 Ta Ta=25 C Ta=-25 C -30 -0.3 -1 -3 C -10 -30 -100 6V VC Ta=-25 C 100 E =- 1V -0.3 -1 -3 -10 -30 -100 -300 3k 1k 500 300 100 50 30 -0.1 -0.3 -1 -3 -10 -30 -100 I B - VBE Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =-6V Ta=1 00 C -100 -30 -10 -3 -1 -0.2 -0.4 -0.6 -0.8 -1.0 Revision No : 1 -1.2 -300 COMMON EMITTER VCE =-10V Ta=25 C COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2010. 1. 28 =- fT - IC -100 0 CE Ta=25 C VCE(sat) - I C -300 -0.3 V Ta=100 C 300 COLLECTOR CURRENT I C (mA) -500 -300 500 30 -0.1 -7 COMMON EMITTER I C /I B =10 -10 -0.1 1k COLLECTOR-EMITTER VOLTAGE VCE (V) -1k -1k BASE CURRENT I B (µA) -1 COMMON EMITTER 50 0 TRANSITION FREQUENCY f T (MHz) 0 Ta=2 5 C Ta=25 C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR CURRENT I C (mA) I C - VCE -300 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2