PANASONIC MA3X555

PIN Diodes
MA3X555
Silicon epitaxial planar type
Rating
Unit
Reverse voltage (DC)
VR
40
V
Peak reverse voltage
VRM
45
V
Forward current (DC)
IF
100
mA
Power dissipation
PD
150
mW
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−55 to +150
°C
1.45
+ 0.1
3
0.4 − 0.05
0.95
1
+ 0.1
0.16 − 0.06
0.8
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Symbol
0.65 ± 0.15
0.95
+ 0.2
2.9 − 0.05
1.1 − 0.1
■ Absolute Maximum Ratings Ta = 25°C
1.5
+ 0.25
− 0.05
2
+ 0.2
• Small diode capacitance CD
• Large variable range of forward dynamic resistance rf
• Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package
1.9 ± 0.2
0.65 ± 0.15
■ Features
Parameter
Unit : mm
+ 0.2
2.8 − 0.3
For UHF and SHF bands AGC
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
Anode 1
Mini Type Package (3-pin)
Marking Symbol: M2H
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
Conditions
Min
Typ
Max
Unit
100
nA
IR
VR = 40 V
Forward voltage (DC)
VF
IF = 100 mA
1.05
1.2
V
Diode capacitance
CD
VR = 15 V, f = 1 MHz
0.3
0.5
pF
rf1
IF = 10 µA, f = 100 MHz
rf2
IF = 10 mA, f = 100 MHz
Forward dynamic resistance*
1
2
6
kΩ
10
Ω
Note) 1.Rated input/output frequency: 100 MHz
2.* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
MA3X555
PIN Diodes
IF  V F
1 000
CD  VR
2
Ta = 25°C
IR  Ta
100
f = 1 MHz
Ta = 25°C
VR = 40 V
10
1
Reverse current IR (nA)
Diode capacitance CD (pF)
Forward current IF (mA)
1
100
0.5
0.3
0.2
0.1
10
1
0.1
0.05
0.03
0.1
0.02
0
0.4
0.8
1.2
1.6
2.0
rf  I F
Forward dynamic resistance rf (Ω)
f = 100 MHz
Ta = 25°C
1k
100
10
1
0.01
0.1
1
Forward current IF (mA)
2
4
8 12 16 20 24 28 32 36 40
Reverse voltage VR (V)
Forward voltage VF (V)
10 k
0
10
0.01
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)