MITSUBISHI MGF4936AM

< Low Noise GaAs HEMT >
MGF4936AM
4pin flat lead package
DESCRIPTION
The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.50dB (Typ.)
High associated gain
@ f=12GHz
Gs = 12.0dB (Typ.)
Fig.1
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
MITSUBISHI Proprietary
GG
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7mA
ORDERING INFORMATION
General part number: MGF4936AM-75
Tape & reel
15000pcs/reel
RoHS COMPLIANT
MGF4936AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Ratings
Unit
Gate to drain voltage
-3
V
Gate to source voltage
-3
V
Drain current
IDSS
mA
50
mW
Channel temperature
125
C
Storage temperature
-55 to +125
C
PT
Tch
Total power dissipation
Tstg
ELECTRICAL CHARACTERISTICS
Symbol
(Ta=25C )
Parameter
(Ta=25C )
Test conditions
Limits
MIN.
V(BR)GDO
IGSS
IDSS
VGS(off)
Gs
Gate to drain breakdown voltage
IG=-10A
Gate to source leakage current
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
Saturated drain current
Gate to source cut-off voltage
Associated gain
VDS=2V,ID=500A
VDS=2V,
ID=7mA,f=12GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Oct., 2011
1
TYP.
Unit
MAX
-3.5
--
--
V
--
--
50
A
mA
12
--
60
-0.1
--
-1.5
V
11.0
12.0
--
dB
--
0.50
0.70
dB
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
2.10 ±0.1
1.30 ±0.05
Fig.1
(0.65) (0.65)
0.30
+0.1
-0.05
+0.1
0.30 -0.05
①
±0.1
±0.1
1.25
Top
2.05
②
F □
②
③
0.40
+0.05
+0.1
0.30 -0.05
+0.1
-0.05
0.11 -0
(0.60) (0.65)
0.49 ±0.05
1.25 ±0.05
Side
③
②
(0.85)
Bottom
①
②
Unit: mm
① Gate
② Source
③ Drain
(GD-30)
Publication Date : Oct., 2011
2
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
TYPICAL CHARACTERISTICS
(Ta=25°C)
ID vs. VGS
50
50
40
40
Drain Current, ID (mA)
Drain Current, ID(mA)
ID vs. VDS
30
20
30
20
10
10
0
0
0
1
2
3
4
-1
Drain to Source voltage, VDS(V)
-0.5
0
Gate to Source voltage, VGS(V)
NF & Gs vs. ID
16
{VD=2V, f=12GHz}
1.4
14
1.2
12
1.0
10
0.8
8
0.6
6
0.4
4
0.2
2
0.0
0
0
5
10
ID (mA)
Publication Date : Oct., 2011
3
15
20
Gs (dB)
NF (dB)
1.6
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
S PARAMETERS
(VDS=2V, ID=7mA, Ta=25deg.C)
S12
S22
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
1
0.998
-12.7
3.891
165.0
0.014
80.2
0.693
-10.5
2
0.978
-25.7
3.886
150.2
0.028
70.3
0.680
-21.1
3
0.950
-38.8
3.881
135.7
0.042
60.9
0.659
-31.7
4
0.908
-52.5
3.874
120.9
0.054
51.2
0.631
-42.5
5
0.856
-66.6
3.859
105.9
0.065
41.7
0.594
-53.5
6
0.794
-81.4
3.828
90.8
0.075
32.1
0.551
-64.6
7
0.730
-97.6
3.797
75.4
0.084
22.9
0.505
-76.7
8
0.654
-115.3
3.707
59.8
0.090
12.8
0.444
-89.5
9
0.579
-133.6
3.578
44.6
0.093
3.7
0.384
-101.9
10
0.513
-154.1
3.435
29.7
0.094
-5.1
0.322
-116.0
11
0.479
-174.3
3.313
15.5
0.095
-11.6
0.275
-131.1
12
0.449
163.9
3.154
1.7
0.092
-19.3
0.221
-147.1
13
0.462
142.5
3.038
-12.5
0.094
-24.7
0.195
-169.8
14
0.491
125.9
2.998
-26.3
0.092
-25.6
0.198
171.0
15
0.543
108.2
2.914
-41.3
0.095
-28.3
0.219
148.4
16
0.597
90.4
2.730
-57.1
0.105
-35.7
0.263
122.3
17
0.643
76.3
2.556
-73.0
0.110
-44.3
0.319
100.9
18
0.680
63.2
2.303
-87.8
0.115
-52.9
0.369
82.0
19
20
0.723
0.758
52.2
41.8
2.054
1.883
-100.4
-112.9
0.115
0.118
-61.3
-70.6
0.418
0.466
67.1
54.0
NOISE PARAMETERS
0.20
0.25
0.29
0.34
0.38
0.43
0.47
0.52
0.56
0.61
0.65
0.70
0.74
0.75
0.68
0.61
0.54
0.48
0.42
0.38
0.35
0.35
0.36
0.39
0.45
0.53
47.6
62.4
78.8
96.9
116.4
137.2
159.4
-177.7
-153.9
-129.7
-105.2
-80.4
-55.3
0.23
0.19
0.15
0.12
0.08
0.05
0.04
0.04
0.06
0.07
0.12
0.16
0.23
0.
35
6
7
8
9
10
11
12
13
14
15
16
17
18
0.
43
(ang)
40
0.
(mag)
35
0.
(dB)
35
0.
(GHz)
[Foot pattern for measurement]
rn
50
0.
NFmin
0.
43
Γopt
Freq.
2.00
S21
0.55
0.90
S11
0.
35
Freq.
4-φ0.30TH
0.40
2.5mm
Reference point
Note: rn is normarised by 50 ohm.
Board: r=3.38
Thickness: 0.5mm
Publication Date : Oct., 2011
4
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
S PARAMETERS
(VDS=2V, ID=10mA, Ta=25deg.C)
Freq.
S11
S21
S12
S22
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
1
0.996
-13.4
4.971
164.1
0.013
80.2
0.638
-10.3
2
0.970
-27.0
4.929
148.5
0.026
71.3
0.623
-20.7
3
0.932
-40.5
4.872
133.1
0.038
62.1
0.601
-31.0
4
0.880
-54.6
4.799
117.8
0.050
53.1
0.571
-41.3
5
0.817
-68.8
4.702
102.5
0.060
44.3
0.534
-51.7
6
0.746
-83.6
4.585
87.3
0.069
36.0
0.492
-62.0
7
0.675
-99.8
4.471
72.0
0.078
27.6
0.446
-73.4
8
0.595
-117.2
4.295
56.8
0.085
18.5
0.388
-85.1
9
0.519
-135.5
4.089
42.2
0.089
10.2
0.333
-96.2
10
0.454
-155.9
3.890
27.9
0.092
2.0
0.272
-109.2
11
0.422
-176.2
3.724
14.5
0.096
-4.6
0.226
-123.1
12
0.395
161.6
3.532
1.3
0.095
-12.2
0.174
-137.9
13
0.413
140.3
3.399
-12.1
0.099
-18.7
0.143
-162.2
14
0.447
124.3
3.360
-25.2
0.101
-21.2
0.143
176.8
15
0.501
107.1
3.287
-39.6
0.104
-25.4
0.162
151.6
16
0.562
89.5
3.098
-55.0
0.113
-33.7
0.206
121.7
17
0.613
75.5
2.925
-70.5
0.118
-42.6
0.264
99.6
18
0.654
62.5
2.656
-85.3
0.123
-51.8
0.317
79.8
19
20
0.701
0.736
51.6
41.3
2.375
2.194
-97.9
-110.2
0.123
0.124
-60.1
-70.2
0.369
0.419
65.2
52.1
NOISE PARAMETERS
Freq.
Γopt
NFmin
rn
(GHz)
(dB)
(mag)
(ang)
6
7
8
9
10
11
12
13
14
15
16
17
18
0.19
0.23
0.28
0.32
0.37
0.41
0.46
0.51
0.55
0.60
0.64
0.69
0.73
0.70
0.63
0.56
0.49
0.43
0.38
0.34
0.32
0.31
0.33
0.36
0.42
0.50
47.3
62.4
79.1
97.6
117.4
138.7
161.3
-175.4
-151.3
-126.9
-102.3
-77.4
-52.3
0.21
0.18
0.13
0.10
0.07
0.06
0.05
0.05
0.06
0.07
0.11
0.16
0.22
Note: rn is normarised by 50 ohm.
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
Publication Date : Oct., 2011
5
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
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Publication Date : Oct., 2011
6