Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. • Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9.5 Watts Avg. Power Gain — 14.9 dB Efficiency — 23.5% Adjacent Channel Power — 885 kHz: –50 dBc @ 30 kHz BW IM3 — –37 dBc • 100% Tested Under 2–Carrier N–CDMA • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 1990 MHz, 45 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF19045R3 CASE 465F–03, STYLE 1 NI–400S MRF19045SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 105 0.60 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 1.65 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF19045R3 MRF19045SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) VGS(Q) 3 3.8 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.19 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 4.2 — S Crss — 1.8 — pF Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–carrier N–CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in 1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth. Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 9.5 W Avg, 2–Carrier N–CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Gps 13 14.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 9.5 W Avg, 2–Carrier N–CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) η 21 23.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 9.5 W Avg, 2–Carrier N–CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth Centered at f1 –2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier Channel Power) IM3 — –37 –35 dBc ACPR — –51 –45 dBc IRL — –16 –9 dB P1dB — 45 — W Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 9.5 W Avg, 2–carrier N–CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith Centered at f1 –885 kHz and f2 +885 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 9.5 W Avg, 2–Carrier N–CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 45 W CW, IDQ = 550 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19045R3 MRF19045SR3 2 MOTOROLA RF DEVICE DATA Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.336″ x 0.081″ Microstrip 0.693″ x 0.081″ Microstrip 1.033″ x 0.047″ Microstrip 0.468″ x 0.047″ Microstrip 0.271″ x 0.460″ Microstrip 0.263″ x 0.930″ Microstrip 1.165″ x 0.047″ Microstrip 0.216″ x 0.047″ Microstrip Z9 Z10 Z11 Board Printed Circuit Board 0.519″ x 0.254″ Microstrip 0.874″ x 0.081″ Microstrip 0.645″ x 0.081″ Microstrip 3″ x 5″ Copper Clad PCB, Arlon GX0300-55-22, εr = 2.55 CMR Part Number 19045PC5.SKF NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are ±0.050″. Zx lengths are microstrip lengths between components, center-line to center-line. All component and z-length tolerances are ±0.015″, except as noted. Figure 1. 1930 – 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic Table 1. 1930 – 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values Designators Description B1, B2 0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446 C1, C2 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 C3, C11 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C4, C8 24 pF Chip Capacitors, B Case, ATC #100B240JP500X C5 470 pF Chip Capacitor, B Case, ATC #100B471JP200X C6, C7 11 pF Chip Capacitors, B Case, ATC #100B110JP500X C9, C10, C12 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 C13 8.2 pF Chip Capacitor, B Case, ATC #100B8R2CP500X R1 560 kΩ, 1/4 W Chip Resistor (0.08″ x 0.13″) R2, R3, R4, R5 8.2 Ω, 1/4 W Chip Resistors (0.08″ x 0.13″), Garrett Instruments #RM73B2B110JT W1, W2 Solid Copper Buss Wire, 16 AWG WS1, WS2 Beryllium Copper Wear Blocks (0.005″ x 0.150″ x 0.350″) Nominal Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type “N” Jack Connectors, Omni-Spectra #3052-1648-10 4-40 Ph Head Screws, 0.125″ long 4-40 Ph Head Screws, 0.312″ long 4-40 Ph Head Screws, 0.625″ long 4-40 Ph Rec. Hd. Screws, 0.625″ long MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 3 C6 MRF19045/S Rev–0 Figure 2. 1930 – 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MRF19045R3 MRF19045SR3 4 MOTOROLA RF DEVICE DATA . η $ 56 η <$ <$ ( .1; +4- >*??-@ *?3A,3>! 1 *++,-+ #( 3 -*BC$&'( *, D (8% <$ <$ ( = 34! : = <$ 9 = .1;! 9 = ( .1; ( ( .1; +4- >*??-@ *?3A,3>! 1 *++,-+ #( 3 -*BC$&'( *, D (8 +E*E,@,F% # % ! " #$% #$&'( ) *++,-+ ) .$% Figure 7. 2-Carrier N-CDMA Power Gain versus Output Power MOTOROLA RF DEVICE DATA = 34 : = <$ 9 = .1;! 9 = ( .1; <$ <$ <$ ( .1; +4- >*??-@ *?3A,3>! 1 *++,-+ #( 3 -*BC$&'( *, D (8 +E*E,@,F% # % <$ Figure 6. 2-Carrier N-CDMA ACPR versus Output Power <$ Figure 5. 2-Carrier N-CDMA IM3 versus Output Power <$ ! " #$% #$&'( ) *++,-+ ) .$% ( ( ! " #$% #$&'( ) *++,-+ ) .$% ( 56 !/"/$/#3% $ !/$0$ "/ 1$"2/"/$/#34% <$ η!/$/" " 7/#8%! !//"/#$/ % .!/1/" ".2$//#34% <$ Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL and Drain Efficiency versus Output Power = 34 : = <$ 9 = .1;! 9 = ( .1; $ 9! ":" 7 #.1;% Figure 3. 2-Carrier N–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 56 . ! " #$% #$&'( ) *++,-+ ) .$% ./#34%! $ /#34%! 2/#3% = 34! : = <$ ( .1; *++,-+ 5*4,?' ( .1; +4- >*??-@ *?3A,3> 1 *++,-+ #( 3 -*BC$&'( *, D (8% 2 3 3 η 56 = 34 : = <$ 9 = .1; ( ( ( ( ( 56 !/"/$/#3% = 34 : = <$ 9 = .1;! 9 = ( .1; η!/$/" " 7/#8%!/ 56 !/"/$/#3% ./#34%! $ /#34% η!/$/" " 7/#8%!/ 56 !/"/$/#3% TYPICAL CHARACTERISTICS ( ( ( ( ( ,?! " #$ % Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power MRF19045R3 MRF19045SR3 5 56 . η ( ( η = 34 : = <$ B1; ?- 5*4,?' 2 56 . ! " #$ "% 9! ":" 7 #.1;% Figure 9. CW Two-Tone Power Gain, IMD and Drain Efficiency versus Output Power Figure 10. CW Two-Tone Power Gain, Input Return Loss, IMD and Drain Efficiency versus Frequency ( = 34 9 = .1;! 9 = ( .1; ( <$ 56 !/"/$/#3% .!/1/"/".2$//#34% <$ <$ <$ <$ ( <$ ( <$ ( ( = 34 9 = .1;! 9 = ( .1; <$ ( ( ( ( ( Figure 12. CW Two-Tone Power Gain versus Output Power Figure 11. CW Two-Tone Intermodulation Distortion versus Output Power = 34 : = <$ 9 = .1;! 9 = ( .1; +3/+3-+ . D ( .1; ?-'+*-3 . D ( .1; ?-'+*-3 >/+3-+ ( ( .1; >*??-@ #34% .!/.!/./#34% ! " #$ "% ! " #$ "% >/+3-+ ( ! " #$ "% Figure 13. CW Two-Tone Intermodulation Distortion Products versus Output Power MRF19045R3 MRF19045SR3 6 $ D B1; ?-'+*-3 $ D B1; ?-'+*-3 9! ":" 7 #.1;% Figure 14. 2-Carrier N-CDMA Spectrum MOTOROLA RF DEVICE DATA .!/".2$///#34%!/2/#3% = 34 : = <$ 9 = .1;! 9 = ( .1; η!/$/" " 7/#8%! 56 !/"/$/#3% .!/".2$//#34% η!/$/" " 7/#8%!/ 56 !/"/$/#3% 9 = .1; ,? 9 = .1; = Ω 9 = .1; 2H 9 = .1; = ! : = <$! = $&'(! ) *++,-+ .$ Zin f MHz Zin Ω ZOL* Ω 1930 15.52 + j16.5 4.52 + j1.86 1960 14.24 + j14.44 3.85 + j1.04 1990 11.11 + j13.01 3.44 + j0.69 = Complex conjugate of the optimum source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. - G 2H A*6 4>6-? E*6-3 ? +*3-996 E-A--? '*,?! 5 5A-+! 3+*,? -99,4,-?4F *?3 ,?-+<3@*,? 3,6+,?( - G .-*6+-<-?6 A-+- *B-? ? >- . )4*++,-+ ) .$ -6 4,+4,! A,> .$ 2*?4>-+6( ?5 .*4>,?' -A+B 5 .*4>,?' -A+B -&,4?3-+ -6 Z in Z * OL Figure 15. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 7 NOTES MRF19045R3 MRF19045SR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 9 NOTES MRF19045R3 MRF19045SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X EEE G Q . $ . . "G ( 22 ."G 1( ( "" ." $ 2"$ " " $." 7(.! ( ( ." 1 ."$" ( #(% $$7 . $ I$" 7( B 1 3 2X K B 2 2X D EEE . $ . . N (LID) 444 . $ . 444 . . $ . . R (LID) . A 2X D EEE . $ . F T M (INSULATOR) A S (INSULATOR) SEATING PLANE *** . $ . H 2X K R $ . N E (LID) 444 . (LID) . $ . . . . F C 3 H A T A (FLANGE) M *** . $ . S SEATING PLANE (INSULATOR) . MILLIMETERS MIN MAX ( ( ( ( ( ( ( ( ( ( ( ( (/ ( ( ( ( ( ( ( ( ( ( (/ (/ (/ 72" G ( $ ( $" ( " "G ( 22 ."G 1( ( "" ." $ 2"$ " " $." 7(.( ( ." 1 ."$" ( #(% $$7 . $ I$" 7( . 2 . . INCHES MIN MAX ( ( ( ( ( ( ( ( ( ( ( ( (/ ( ( ( ( ( ( ( ( ( ( ( ( ( ( (/ (/ (/ CASE 465E–03 ISSUE D NI–400 MRF19045R3 1 444 . C E *** $ . DIM A B C D E F G H K M N Q R S aaa bbb ccc (INSULATOR) *** B . B (FLANGE) $ DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( (/" (/" (/" MILLIMETERS MIN MAX ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( (/" (/" (/" 72" G ( $ ( $" ( " CASE 465F–03 ISSUE B NI–400S MRF19045SR3 MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19045R3 MRF19045SR3 12 ◊ MOTOROLA RF DEVICE MRF19045/D DATA