FREESCALE MRF6P23190H_08

Freescale Semiconductor
Technical Data
Document Number: MRF6P23190H
Rev. 3, 12/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA,
Pout = 40 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P23190HR6
2300 - 2400 MHz, 40 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
CW
250
1.3
W
W/°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
RθJC
0.22
0.24
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage (3)
(VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage (1)
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
1.5
—
pF
Off Characteristics
(1)
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f = 2390 MHz, 2 - Carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14
16
dB
Drain Efficiency
ηD
22
23.5
—
%
Intermodulation Distortion
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 41
- 38
dBc
IRL
—
- 13
—
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
MRF6P23190HR6
2
RF Device Data
Freescale Semiconductor
VSUPPLY
+
C7
B1
R1
VBIAS
+
+
C12
C11
C10
C9
C5
B2
Z3
RF
INPUT
Z1
C17
C18
C19
C20 C21
C27
Z19
Z5
Z15
Z17
Z21
Z23
Z13
Z7
Z9
C3
Z11
C1
Z2
Z25
Z26
Z27
RF
OUTPUT
Z28
DUT
Z4
Z6
Z8
Z10
Z12
C2
Z16
Z18
Z22
Z24
Z14
C4
B3
R2
VBIAS
+
+
C16
C15
C14
C13
Z20
C6
B4
+
C8
Z1, Z28
Z2
Z3
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
0.380″
0.850″
2.244″
0.186″
0.614″
0.570″
0.072″
0.078″
0.861″
0.187″
x 0.081″
x 0.135″
x 0.081″
x 0.074″
x 0.081″
x 0.282″
x 0.500″
x 0.500″
x 0.050″
x 0.782″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z17, Z18
Z19, Z20
Z21, Z22
Z23
Z24
Z25
Z26
Z27
PCB
C22
C23
C24
C25 C26
VSUPPLY
C28
0.321″ x 0.782″ Microstrip
0.404″ x 0.074″ Microstrip
0.918″ x 0.081″ Microstrip
0.346″ x 0.081″ Microstrip
2.103″ x 0.081″ Microstrip
0.037″ x 0.135″ Microstrip
0.250″ x 0.300″ Microstrip
0.563″ x 0.135″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6P23190HR6 Test Circuit Schematic
Table 5. MRF6P23190HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2, B3, B4
Ferrite Beads
2508051107Y0
Fair - Rite
C1, C2, C3, C4
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C5, C6, C7, C8
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
ATC
C9, C13
0.01 μF, 100 V Chip Capacitors
C1825C103J1RAC
Kemet
C10, C14, C17, C22
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C11, C15
22 μF, 25 V Tantalum Capacitors
T491D226K025AT
Kemet
C12, C16
47 μF, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C18, C19, C20, C21, C23,
C24, C25, C26
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C27, C28
330 μF, 63 V Electrolytic Capacitors
NACZF331M63V
Nippon
R1, R2
240 Ω, 1/4 W Chip Resistors
CRCW12062400FKEA
Vishay
MRF6P23190HR6
RF Device Data
Freescale Semiconductor
3
R1
C12 C11 C10* C9*
C20 C21
B1
B2
C17
C18 C19
C27
C7
C5
C3
C1
C2
MRF6P23190H
Rev. 3
C6
B3
B4
CUT OUT AREA
C4
C8
C22
R2
C16 C15 C14* C13*
C23 C24
C25
C26
C28
*Stacked.
Figure 2. MRF6P23190HR6 Test Circuit Component Layout
MRF6P23190HR6
4
RF Device Data
Freescale Semiconductor
24
ηD
14
23
13.8
22
Gps
13.6
13.4
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IM3
−36
−38
13.2
−40
IRL
13 ACPR
12.8
2270
2290
2310
2330
2350
−42
2370
2390
−44
2430
2410
−13
−15
−16
−18
−19
−21
IRL, INPUT RETURN LOSS (dB)
25
VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1900 mA
14.2 2−Carrier W−CDMA, 10 MHz Carrier Spacing
ηD, DRAIN
EFFICIENCY (%)
14.4
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 40 Watts Avg.
13.6
32
13.4
31
13.2
Gps
13
IM3
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
−26
−28
12.8
12.6
−30
IRL
ACPR
12.4
2270
−32
2290
2310
2330
2350
2370
2390
−34
2430
2410
−12
−13
−15
−16
−18
−19
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
34
ηD
ηD, DRAIN
EFFICIENCY (%)
35
VDD = 28 Vdc, Pout = 80 W (Avg.), IDQ = 1900 mA
13.8 2−Carrier W−CDMA, 10 MHz Carrier Spacing
IM3 (dBc), ACPR (dBc)
14
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 80 Watts Avg.
16
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
Gps, POWER GAIN (dB)
15
−10
IDQ = 2850 mA
2375 mA
14
13
12
1900 mA
1425 mA
950 mA
11
10
0.5
VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
1
10
100
500
VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
2850 mA
−30
−40
IDQ = 950 mA
1900 mA
−50
2375 mA
1425 mA
−60
−70
0.5
1
10
100
500
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P23190HR6
RF Device Data
Freescale Semiconductor
5
0
65
VDD = 28 Vdc, Pout = 190 W (PEP)
IDQ = 1900 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
−20
−30
3rd Order
−40
5th Order
−50
7th Order
P3dB = 55.1 dBm (325.54 W)
61
59
P1dB = 54.5 dBm (283.85 W)
57
55
Actual
53
VDD = 28 Vdc, IDQ = 1900 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
51
−60
0.1
Ideal
P6dB = 55.73 dBm (374.11 W)
63
Pout, OUTPUT POWER (dBm)
−10
49
10
1
100
37
35
39
41
43
45
47
49
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
36
VDD = 28 Vdc, IDQ = 1900 mA
f1 = 2345 MHz, f2 = 2355 MHz
2−Carrier W−CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
30
24
−25
85_C
25_C
−30_C −30
85_C
ηD
25_C
−30_C
18
−40
Gps
TC = −30_C
12
85_C
−35
25_C
−45
IM3 (dBc), ACPR (dBc)
TWO−TONE SPACING (MHz)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
IM3
−50
6
ACPR
0
−55
1
10
100
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
50
85_C
40
25_C
30
14
85_C
20
13
ηD
12
10
11
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
0
400
14
Gps, POWER GAIN (dB)
Gps
TC = −30_C
15
IDQ = 1900 mA
f = 2350 MHz
−30_C
ηD, DRAIN EFFICIENCY (%)
16
Gps, POWER GAIN (dB)
15
60
VDD = 28 Vdc
IDQ = 1900 mA
f = 2350 MHz
13
12
VDD = 24 V
11
28 V
32 V
10
0
50
100
150
200
250
300
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6P23190HR6
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 40 W Avg., and ηD = 23.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
−10
1
(dB)
PROBABILITY (%)
10
0.1
−20
−30
−40
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
−50
−60
−70
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25 −20
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6P23190HR6
RF Device Data
Freescale Semiconductor
7
f = 2400 MHz
Zsource
Zo = 50 Ω
f = 2300 MHz
f = 2400 MHz
Zload
f = 2300 MHz
VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2300
9.31 - j12.12
7.89 - j32.78
2310
9.27 - j11.93
7.61 - j32.19
2320
9.24 - j11.75
7.35 - j31.62
2330
9.21 - j11.57
7.10 - j31.06
2340
9.18 - j11.40
6.86 - j30.53
2350
9.16 - j11.23
6.64 - j30.01
2360
9.14 - j11.06
6.43 - j29.51
2370
9.13 - j10.90
6.23 - j29.02
2380
9.12 - j10.75
6.04 - j28.55
2390
9.11 - j10.59
5.86 - j28.09
2400
9.11 - j10.45
5.68 - j27.64
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6P23190HR6
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
A
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
D
aaa
M
T A
M
B
M
ccc
ccc
T A
M
M
B
M
T A
M
B
M
R
M
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375D - 05
ISSUE E
NI - 1230
MRF6P23190HR6
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Mar. 2007
Description
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a
200°C+ hot wire operating condition, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
3
Dec. 2008
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
MRF6P23190HR6
10
RF Device Data
Freescale Semiconductor
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unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2005-2008. All rights reserved.
MRF6P23190HR6
Document
Number:
RF
Device
Data MRF6P23190H
Rev. 3, 12/2008
Freescale
Semiconductor
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