Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800– 970 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10.5 dB @ 900 MHz, class–AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP) 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON • Characterized with Series Equivalent Large–Signal Parameters from 800 to 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power • Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal– Migration • Circuit Board Photomaster Available by Ordering Document MRF897RPHT/D from Motorola Literature Distribution. CASE 395B–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector–Current — Continuous IC 4.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 105 0.60 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 1.67 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 33 — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 80 — Vdc Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0) V(BR)EBO 4.0 4.7 — Vdc ICES — — 10.0 mAdc hFE 30 80 120 — Cob 14 21 28 Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25°C) ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) pF (continued) RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF897R 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Gpe 10.5 12.0 — dB Collector Efficiency (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) η 30 38 — % Intermodulation Distortion (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) IMD — –37 –30 dBc FUNCTIONAL CHARACTERISTICS Output Mismatch Stress (VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles)) VBB R1 ψ No Degradation in Output Power R5 R3 C6 Q1 + C21 L3 C18 C11 L5 + C13 VCC B3 VB B1 C25 C4 C16 L7 C8 L1 COAX 1 BALUN 2 TL9 DUT TL3 TL2 TL7 TL5 INPUT + C2 TL1 C23 C10 C15 TL6 C1 C20 TL11 TL8 C3 TL4 TL10 L2 BALUN 1 OUTPUT C24 COAX 2 L8 C9 B2 C17 L4 VB B4 C26 VBB R2 C7 + R4 B1, B2, B3, B4 — Short Ferrite Bead, Fair Rite #2743019447 C1 — 0.8 – 8.0 pF Var Capacitor, Johansen Gigatrim C2, C3, C23, C24 — 43 pF, 100 mil, ATC Chip Capacitor C4, C5, C21, C22 — 1000 pF, 100 mil, ATC Chip Capacitor C6, C7, C11, C12 — 10 µF, Electrolytic Capacitor, Panasonic C8, C9, C16, C17 — 100 pF, 100 mil, ATC Chip Capacitor C10 — 9.1 pF, 50 mil, ATC Chip Capacitor C13 — 250 µF Electrolytic Capacitor, Mallory C14, C18, C19, C25 — 0.1 µF, Chip Capacitor, Kemet C15 — 1.1 pF, 50 mil, ATC Chip Capacitor C20 — 6.8 pF, 100 mil, ATC Chip Capacitor L1, L2, L3, L4, L5, L6, L7, L8 — 5 Turns 20 AWG, IDIA 0.126″ Choke, Taylor Spring 46 nH L6 C5 C22 C19 R6 + C12 + VCC C14 N1, N2 — Type N Flange Mount, Omni Spectra 3052–1648–10 Q1 — Bias Transistor BD136 PNP R1, R12 — 27 Ohm, 2.0 W R3, R4, R5, R6 — 4.0 x 39 Ohm, 1/8 W, Chips Resistors in R3, R4, R5, R6 — Parallel, Rohm 390–J SB1 — 0.15″ x 0.3″ x 0.03″ Cu TL1 – TL11 — Microstrip Line, See Photomaster Balun1, Balun2, Coax 1, Coax 2 — 2.20″ 50 Ohm, 0.086″ o.d. Balun1, Balun2, Coax 1, Coax 2 — semi–rigid coax, Micro Coax Balun1, Balun2, Coax 1, Coax 2 — UT–85–M17 Circuit Board — 1/32″ Glass Teflon, Arlon GX–0300–55–22, Circuit Board — εr = 2.55 Figure 1. 840 – 900 MHz Test Circuit Schematic MRF897R 2 MOTOROLA RF DEVICE DATA 45 40 40 Pout , OUTPUT POWER (WATTS) f = 800 MHz 30 900 MHz 25 960 MHz 20 15 VCC = 24 Vdc ICQ = 125 mA 10 5 0 0.0 0.5 1.0 1.5 2.0 Pin, INPUT POWER (WATTS) 2.5 W 35 2W 30 1.5 W 25 20 1W 15 0.5 W 10 VCC = 24 Vdc ICQ = 125 mA 5 2.5 0 800 3.0 Figure 2. Output Power versus Input Power Pout , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) Pin = 2.5 W 35 1.5 W 30 25 20 15 0.5 W 10 f = 900 MHz ICQ = 125 mA 5 0 14 16 18 20 22 24 26 VCC, SUPPLY VOLTAGE (VOLTS) 28 860 880 900 f, FREQUENCY (MHz) 30 –40 5TH –45 7TH –50 –55 f1 = 900 MHz f2 = 900.1 MHz VCC = 24 Vdc ICQ = 125 mA –60 –65 –70 0 5 10 15 20 25 Pout, OUTPUT POWER (WATTS–PEP) 11.0 9.5 9.0 0.01 35 Figure 5. Intermodulation versus Output Power 50 GPE 11 ICQ = 400 mA 300 mA 45 10 250 mA 200 mA 10.5 10.0 30 12 12.0 11.5 960 –35 GPE , POWER GAIN (dB) G PE, POWER GAIN (dB) 12.5 940 3RD ORDER –30 13.5 13.0 920 –25 Figure 4. Output Power versus Supply Voltage 14.0 840 Figure 3. Output Power versus Frequency 45 40 820 f = 900 MHz VCC = 24 Vdc ICQ = 125 mA 125 mA 0.1 1 Pout, OUTPUT POWER, (WATTS) 10 Figure 6. Power Gain versus Output Power MOTOROLA RF DEVICE DATA 40 η 9 35 Pout = 30 W (PEP) VCC = 24 Vdc ICQ = 125 mA 8 30 INPUT VSWR 7 25 6 840 850 860 870 880 890 20 900 η , EFFICIENCY (%) 35 Pin = 3 W 1.0 1.5 2.0 INPUT VSWR Pout , OUTPUT POWER (WATTS) 45 f, FREQUENCY (MHz) Figure 7. Broadband Test Fixture Performance MRF897R 3 f MHz Pout = 30 W (PEP), VCC = 24 V Zin ZOL* Ohms Ohms 800 1.7 + j9.2 5.9 – j0.4 850 2.6 + j10 5.7 + j2.6 900 4 + j9.9 5.9 + j3.4 950 5 + j8.8 6.2 + j4.4 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 800 MHz 850 Zin 900 960 960 900 850 Zo = 10 Ohms ZOL* f = 800 MHz NOTE: Zin & ZOL* are given from base–to–base and collector–to–collector respectively. Figure 8. Series Equivalent Input/Output Impedances R1 C6 SB1 Ç Ç Ç Ç L5 R3 L3 C25 C4 COAX1 C18 Q1 ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ C21 C1 L1 C15 L2 C9 Ç Ç Ç Ç Ç Ç Ç Ç BALUN2 L7 C23 C24 L8 C17 B2 C14 R2 R5 C20 C10 BALUN1 C5 C7 ÇÇ ÇÇ ÇÇ ÇÇ R4 C13 C16 C8 C3 C11 B3 B1 C2 ÉÉ ÉÉ ÉÉ ÉÉ L4 COAX2 B4 C22 C19 ÉÉ ÉÉ ÉÉ MRF897R R6 L6 C12 Figure 9. 840 – 900 MHz Test Circuit Component Layout MRF897R 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– Q 2 PL U 0.51 (0.020) 1 2 3 4 M T A M B M DIM A B C D E G H J K N Q U –B– 5 K G D J N H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E C –T– SEATING PLANE INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.055 0.065 0.055 0.070 0.110 0.130 0.079 0.091 0.003 0.005 0.180 0.220 0.315 0.330 0.125 0.135 0.560 BSC STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 1.40 1.65 1.40 1.78 2.79 3.30 2.01 2.31 0.08 0.13 4.57 5.59 8.00 8.38 3.18 3.42 14.22 BSC BASE BASE COLLECTOR COLLECTOR EMITTER CASE 395B–01 ISSUE A MOTOROLA RF DEVICE DATA MRF897R 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF897R 6 ◊ *MRF897R/D* MRF897R/D MOTOROLA RF DEVICE DATA