SAVANTIC 2N6357

SavantIC Semiconductor
Product Specification
2N6357
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
20
A
IB
Base current
0.5
A
PD
Total Power Dissipation
150
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.09
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6357
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)CEO
Collector-emitter breakdwon voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=10A ;IB=40mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=20A ;IB=1A
4.0
V
VBE sat
Base-emitter saturation voltage
IC=20A ;IB=1A
4.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=4V
2.8
V
ICEO
Collector cut-off current
MAX
1.0
mA
ICBO
Collector cut-off current
VCB=80V; IE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5.0
mA
hFE-1
DC current gain
IC=4A ; VCE=5V
500
hFE-2
DC current gain
IC=20A ; VCE=5V
100
60
VCE=60V;IB=0
2
TYP.
UNIT
V
5000
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
2N6357