2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT-23 D Gate Top View S G Source Equivalent Circuit Top View Ordering Information (Note 3) Part Number 2N7002-7-F Notes: Case SOT-23 Packaging 3000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2N7002 Document number: DS11303 Rev. 24 - 2 2000 L 2001 M Mar 3 2002 N Apr 4 K7x = Product Type Marking Code, e.g. K72 YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) YM K7x 2003 P May 5 2004 R 2005 S Jun 6 1 of 5 www.diodes.com 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D November 2010 © Diodes Incorporated 2N7002 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current (Note 4) Thermal Characteristics Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Value 60 60 ±20 ±40 115 73 800 Units V V Value 300 2.4 417 -55 to +150 Units mW mW/°C °C/W °C V mA @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Derating above TA = 25°C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance @ TC = 25°C @ TC = 125°C @ TJ = 25°C @ TJ = 125°C Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10μA IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ⎯ 1.0 500 ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ⎯ 3.2 4.4 2.5 V 7.5 13.5 Ω VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA ⎯ ⎯ RDS (ON) ⎯ On-State Drain Current Forward Transconductance Diode Forward Voltage (Note 6) Continuous Source Current (Note 6) Pulse Source Current (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time ID(ON) gFS VSD IS ISD 0.5 80 ⎯ ⎯ ⎯ 1.0 ⎯ 0.78 ⎯ ⎯ ⎯ ⎯ 1.5 200 2 A mS V mA A Ciss Coss Crss ⎯ ⎯ ⎯ 22 11 2.0 50 25 5.0 pF pF pF tD(ON) ⎯ 7.0 20 ns Turn-Off Delay Time tD(OFF) ⎯ 11 20 ns Notes: Test Condition VDS = 25V, VGS = 0V f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 5. Short duration pulse test used to minimize self-heating effect. 6. VSD measured in 250μs pulse, duty cycle = 2%; ISD measure in 10ms Repetitive Pulse, duty cycle = 2% , Pd_Pulse is from Zth test data 2N7002 Document number: DS11303 Rev. 24 - 2 2 of 5 www.diodes.com November 2010 © Diodes Incorporated 2N7002 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 4 3 2 1 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 2.5 2.0 1.5 VGS = 10V, ID = 200mA 5 4 ID = 500mA 3 ID = 50mA 2 1 0 0 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs. Junction Temperature 10 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 400 9 350 Pd, POWER DISSIPATION (mW) VGS, GATE SOURCE CURRENT (V) 5 0 0 5 3.0 1.0 -55 6 8 7 6 5 4 3 2 300 250 200 150 100 50 1 0 0 0.2 0.6 0.8 0.4 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics 2N7002 Document number: DS11303 Rev. 24 - 2 1 3 of 5 www.diodes.com 0 50 75 25 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 November 2010 © Diodes Incorporated 2N7002 Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X 2N7002 Document number: DS11303 Rev. 24 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com November 2010 © Diodes Incorporated 2N7002 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com 2N7002 Document number: DS11303 Rev. 24 - 2 5 of 5 www.diodes.com November 2010 © Diodes Incorporated