DIODES BSS138DW-7-F

BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Available in Lead Free/RoHS Compliant Version (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 5 and 6)
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound
(Note 6). UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
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SOT-363
TOP VIEW
Maximum Ratings
Thermal Characteristics
S2
G2
D1
Symbol
VDSS
VDGR
VGSS
ID
Continuous
Continuous
BSS138DW
50
50
±20
200
Units
V
V
V
mA
BSS138DW
200
625
-55 to +150
Units
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
2.
3.
4.
5.
6.
S1
TOP VIEW
Internal Schematic
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
1.
G1
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Drain Current (Note 1)
Notes:
D2
Symbol
PD
RθJA
TJ, TSTG
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
50
⎯
⎯
75
⎯
⎯
⎯
0.5
±100
V
µA
nA
VGS = 0V, ID = 250μA
VDS = 50V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
gFS
0.5
⎯
100
1.2
1.4
⎯
1.5
3.5
⎯
V
Ω
mS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.22A
VDS =25V, ID = 0.2A, f = 1.0KHz
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
50
25
8.0
pF
pF
pF
VDS = 10V, VGS = 0V, f = 1.0MHz
tD(ON)
tD(OFF)
⎯
⎯
⎯
⎯
20
20
ns
ns
VDD = 30V, ID = 0.2A,
RGEN = 50Ω
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
RGS ≤ 20KΩ.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS138DW
Document number: DS30203 Rev. 12 - 2
1 of 5
www.diodes.com
September 2009
© Diodes Incorporated
BSS138DW
T j = 25 °C
0.8
VGS = 3.5V
0.7
0.5
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
0.6
VGS = 3.25V
0.4
VGS = 3.0V
0.3
VGS = 2.75V
0.2
VGS = 2.5V
0.1
0
150°C
0.4
0.3
0.2
0.1
0
0
0.5 1
1.5
2
2.5
3 3.5 4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
4.5
2
VGS(th), GATE THRESHOLD VOLTAGE (V)
2.25
2.05
1.85
VGS = 10V
ID = 0.5A
1.65
1.45
1.25
VGS = 4.5V
ID = 0.075A
1.05
0.85
45
145
95
-5
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
VGS = 2.5V
150°C
7
6
5
25°C
4
3
-55°C
2
1
0
0
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
ID, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
BSS138DW
Document number: DS30203 Rev. 12 - 2
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
50
75
100 125 150
-25
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
8
1.8
0
-55
0.65
-55
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
25°C
0.5
2
2.45
RDS(ON), NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (Ω)
-55 °C
0.6
7
3
4
5
6
8
9 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
1
0
VDS = 1V
2 of 5
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9
VGS = 2.75V
8
7
150°C
6
5
4
25°C
3
2
-55°C
1
0
0.2
0.25
0.1
0.15
ID, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0
0.05
September 2009
© Diodes Incorporated
3.5
6
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
BSS138DW
VGS = 4.5V
150° C
5
4
3
25°C
2
-55°C
1
0
0
150°C
VGS = 10V
3
2.5
2
25°C
1.5
1
-55°C
0.5
0
0
0.5
ID, DRAIN-CURRENT (A)
Fig. 8 Drain-Source On-Resistance vs. Drain-Current
0.5
ID, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
100
1
C, CAPACITANCE (pF)
ID, DIODE CURRENT (A)
VGS = 0V
f = 1MHz
150°C
0.1
-55°C
25°C
0.01
Ciss
10
Coss
C rss
0.001
1
0.2
0.6
1
1.2
0.4
0.8
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
0
Ordering Information
0
(Note 7)
Part Number
BSS138DW-7-F
Notes:
5
15
20
25
10
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
Case
SOT-363
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K38
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
YM
YM
K38
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
1
Feb
2
BSS138DW
Document number: DS30203 Rev. 12 - 2
Mar
3
Apr
4
May
5
Jun
6
3 of 5
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Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
September 2009
© Diodes Incorporated
BSS138DW
Package Outline Dimensions
A
B C
H
K
M
J
D
F
L
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
C2
Z
C2
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
C1
G
Y
X
BSS138DW
Document number: DS30203 Rev. 12 - 2
4 of 5
www.diodes.com
September 2009
© Diodes Incorporated
BSS138DW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
BSS138DW
Document number: DS30203 Rev. 12 - 2
5 of 5
www.diodes.com
September 2009
© Diodes Incorporated