Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Transistors SOT-523 2SA1832 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-6V, IC=-2mA VCE(sat) IC=-100mA, IB=-10mA fT VCE=-10V, IC=-1mA Cob VCB=-10V, IE=0, f=1MHz Collector-emitter saturation voltage Transition frequency Collector output capacitance TYP 120 Range Marking UNIT 400 -0.3 80 V MHz 7 CLASSIFICATION OF hFE(1) Rank MAX Y GR 120-240 200-400 SY SG pF Typical Characteristics 2SA1832