ETC 2SA1961Q

Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
Unit: mm
1.05 2.5±0.1
±0.05
■ Features
0.8
0.2
High collector to emitter voltage VCEO.
14.5±0.5
0.65 max.
■ Absolute Maximum Ratings
(1.45)
1.0 1.0
●
4.0
0.5
4.5±0.1
0.15
6.9±0.1
0.7
(Ta=25˚C)
+0.1
*
Unit
Collector to base voltage
VCBO
–200
V
Collector to emitter voltage
VCEO
–200
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
– 0.1
A
Collector current
IC
–70
mA
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
0.45–0.05
2.5±0.5
1
2.5±0.5
2
+0.1
Ratings
0.45–0.05
Symbol
3
2.5±0.1
Parameter
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
or more, and the board
1.2±0.1
0.65
max.
0.45+–0.1
0.05
(HW type)
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to emitter voltage
VCEO
IC = –100µA, IB = 0
–200
V
Emitter to base voltage
VEBO
IE = –1µA, IC = 0
–5
V
VCE = –10V, IC = –5mA
30
*1
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
IC = –50mA, IB = –5mA
Transition frequency
fT
VCB = –5V, IE = 10mA, f = 200MHz
30
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
7
pF
*1h
FE
150
–
–2.5
V
Rank classification
Rank
P
Q
hFE
30 ~ 100
60 ~ 150
1
Transistor
2SA1961
PC — Ta
IC — VCE
1.6
1.2
0.8
0.4
–120
–100
25˚C
–100
IB=–1.0mA
– 0.9mA
– 0.8mA
–80
– 0.7mA
– 0.6mA
–60
– 0.5mA
– 0.4mA
–40
– 0.3mA
– 0.2mA
–20
Ta=75˚C
–25˚C
–80
–60
–40
–20
– 0.1mA
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
–2
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.003
–3
–10
–30
–12
0
–100 –300 –1000
Collector current IC (mA)
24
210
180
150
Ta=75˚C
120
25˚C
90
–25˚C
60
30
0
–1
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–3
–10
–30
–1.2
Base to emitter voltage VBE (V)
Cob — VCB
VCE=–10V
Forward current transfer ratio hFE
–1
– 0.001
–1
–10
240
IC/IB=10
– 0.1
–8
hFE — IC
–3
– 0.3
–6
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–10
–4
–100 –300 –1000
Collector current IC (mA)
Collector output capacitance Cob (pF)
0
Collector to emitter saturation voltage VCE(sat) (V)
VCE=–10V
Ta=25˚C
Collector current IC (mA)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
IC — VBE
–120
Collector current IC (mA)
Collector power dissipation PC (W)
2.0
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
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2001 MAR