2SB852K / 2SA830S Transistors High-gain Amplifier Transistor (−32V, −0.3A) 2SB852K / 2SA830S zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K / 2SD1645S. 2SB852K 2.9 1.1 0.4 0.8 1.6 2.8 (3) zCircuit diagram (2) (1) 0.3Min. C 0.95 0.95 0.15 1.9 (1)Emitter (2)Base B Each lead has same dimensions (3)Collector RBE 4kΩ 2SA830S E : Emitter B : Base C : Collector 4.0 2.0 (15Min.) 3Min. 3.0 E zPackaging specifications Type 2SB852K 2SA830S Package hFE SPT B Marking SMT3 B U∗ Code Basic ordering unit (pieces) T146 3000 TP 5000 0.45 2.5 0.5 0.45 5.0 (1) (2) (3) (1)Emitter − (2)Collector Taping specifications (3)Base ∗ Denotes hFE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −40 VCES −32 Collector-emitter voltage VEBO −6 Emitter-base voltage Collector current IC −0.3 2SB852K 0.2 Collector power PC dissipation 0.3 2SA830S Junction temperature Tj 150 Storage temperature Tstg −55 to +150 Unit V V V A ∗ W °C °C ∗ RBE=0Ω Rev.A 1/3 2SB852K / 2SA830S Transistors zElectrical characteristics (Ta=25°C) Parameter Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol BVCBO BVCES BVEBO ICBO IEBO hFE Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) fT Cob Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Min. −40 −32 −6 − − 5000 − − − Typ. − − − − − − − 200 3 Max. − − − −1 −1 − −1.5 − − Unit V V V µA µA − V MHz pF Conditions IC= −100µA IC= −1mA IE= −100µA VCB= −24V VEB= −4.5V VCE= −5V, IC= −0.1A IC= −200mA, IB= −0.4mA ∗1 VCE= −5V, IE=10mA, f=100MHz ∗2 VCB= −10V, IE=0A, f=1MHz ∗1 Measured using pulse current. ∗2 Transition frequency of the device. zElectrical characteristic curves −500 VCE= −6V 25 COLLECTOR CURRENT : IC (mA) 50 −50 −20 Ta= −55°C −100 Ta=25° C 75 −200 0°C 100 −100 Ta=10 COLLECTOR CURRENT : IC (mA) POWER DISSIPATION : PC/PCMax (%) 125 −10 −5 Ta=25°C −9µA −80 −8µA −7µA −60 −6µA −5µA −40 −4µA −3µA −20 −2µA −2 0 0 25 50 75 100 125 0 −0.4 150 −1.2 −1.6 −2.0 −2.4 −20 5000 VCE= −3V 2000 1000 500 −4 −5 IC/IB=500 −10 50000 100 Ta= 20000 10000 DC CURRENT GAIN : hFE −5V 10000 DC CURRENT GAIN : hFE 50000 20000 −3 Fig.3 Ground emitter output characteristics VCE= −5V Ta=25°C IB=0 −2 −1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Ground emitter propagation characteristisc Fig.1 Power dissipation curves 100000 −0.8 0 0 BASE TO EMITTER VOLTAGE : VBE (V) AMBIENT TEMPERATURE : Ta (°C) DC CURRENT GAIN : hFE −10µA °C C 25° 5°C −5 5000 2000 −5 −2 Ta= −55°C −1 −0.5 25°C 100°C 1000 200 100 −2 −0.2 500 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) −0.1 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Rev.A 2/3 2SB852K / 2SA830S 5000 2000 1000 500 200 100 50 1 2 5 10 20 50 100 200 EMITTER CURRENT : IE (mA) Fig.7 Gain bandwidth product vs. emitter current 100 Ta=25°C f=1MHz IE=0A 50 20 10 5 2 1 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C VCE= −5V 10000 OUTPUT CAPACITANCE : Cob (pF) TRANSISION FREQUWNCY : fT (MHz) Transistors 20 Ta=25°C f=1MHz IE=0A 10 5 2 1 −1 −2 −5 −10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1