ETC 2SB0970|2SB970

Transistors
2SB0970 (2SB970)
Silicon PNP epitaxial planar type
For low-voltage output amplification
Unit: mm
0.40+0.10
–0.05
■ Features
0.16+0.10
–0.06
0.4±0.2
5˚
1.50+0.25
–0.05
(0.95) (0.95)
1.9±0.1
(0.65)
2
1
■ Absolute Maximum Ratings Ta = 25°C
2.8+0.2
–0.3
3
• Low collector-emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
2.90+0.20
–0.05
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−15
V
Collector-emitter voltage (Base open)
VCEO
−10
V
Emitter-base voltage (Collector open)
VEBO
−7
V
Collector current
IC
− 0.5
A
Peak collector current
ICP
−1
A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1.1+0.2
–0.1
0 to 0.1
1.1+0.3
–0.1
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 1R
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−15
V
Collector-emitter voltage (Base open)
VCEO
IC = −1 mA, IB = 0
−10
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
Collector-base cutoff current (Emitter open)
ICBO
VCB = −10 V, IE = 0
Forward current transfer ratio *1
hFE1 *2
hFE2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage *1
Transition frequency
130
VCE = −2 V, IC = −1 A
60
nA
350


VCE(sat)
IC = − 0.4 A, IB = −8 mA
− 0.16 − 0.30
V
VBE(sat)
IC = − 0.4 A, IB = −8 mA
− 0.8
V
VCB = −10 V, IE = 50 mA, f = 200 MHz
130
MHz
VCB = −10 V, IE = 0, f = 1 MHz
22
pF
fT
Collector output capacitance
(Common base, input open circuited)
VCE = −2 V, IC = − 0.5 A
V
−100
Cob
−1.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
130 to 220
180 to 350
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00063BED
1
2SB0970
IC  VCE
200
−1.0
Ta = 25°C
IB = −10 mA
−9 mA
−8 mA
−7 mA
−6 mA
− 0.8
160
−5 mA
− 0.6
120
−4 mA
−3 mA
− 0.4
80
−2 mA
− 0.2
40
0
40
80
120
0
160
Ambient temperature Ta (°C)
−1 mA
−1
0
−2
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
−10
−1
Ta = 75°C
25°C
−25°C
− 0.01
− 0.01
− 0.1
−1
−10
Collector current IC (A)
400
300
Ta = 75°C
25°C
−25°C
200
100
0
− 0.01
− 0.1
−1
Collector current IC (A)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
IE = 0
f = 1 MHz
Ta = 25°C
60
40
20
−100
Collector-base voltage VCB (V)
2
SJC00063BED
Ta = −25°C
75°C
− 0.01
− 0.01
− 0.1
−1
−10
Collector current IC (A)
fT  I E
500
Cob  VCB
−10
−6
200
VCE = −2 V
80
0
−1
−5
25°C
−1
hFE  IC
600
IC / IB = 50
− 0.1
−4
−10
Collector-emitter voltage VCE (V)
VCE(sat)  IC
−100
−3
IC / IB = 50
− 0.1
Transition frequency fT (MHz)
0
VBE(sat)  IC
−100
Base-emitter saturation voltage VBE(sat) (V)
−1.2
Collector current IC (A)
Collector power dissipation PC (mW)
PC  Ta
240
−10
VCB = −10 V
Ta = 25°C
160
120
80
40
0
1
10
Emitter current IE (mA)
100
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL