ETC 2SB1073R

Transistor
2SB1073
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
2.5±0.1
+0.25
0.4max.
0.4±0.08
4.0–0.20
45°
+0.1
●
Low collector to emitter saturation voltage VCE(sat).
Large peak collector current ICP.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
1.0–0.2
●
2.6±0.1
●
1.5±0.1
4.5±0.1
1.6±0.2
■ Features
0.5±0.08
1.5±0.1
0.4±0.04
3.0±0.15
■ Absolute Maximum Ratings
*
(Ta=25˚C)
3
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage
VCEO
–20
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–7
A
Collector current
IC
–4
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
■ Electrical Characteristics
2
1
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
I
or more, and the board
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
–100
nA
–100
nA
Collector cutoff current
ICBO
VCB = –30V, IE = 0
Emitter cutoff current
IEBO
VEB = –7V, IC = 0
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–30
V
Collector to emitter voltage
VCEO
IC = –1mA, IB = 0
–20
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
*1
VCE = –2V, IC =
–2A*2
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
IC = –3A, IB = –0.1A*2
120
– 0.6
315
Transition frequency
fT
VCB = –6V, IE = 50mA, f = 200MHz
120
Collector output capacitance
Cob
VCB = –20V, IE = 0, f = 1MHz
40
–1
MHz
pF
*2
*1h
FE
V
Pulse measurement
Rank classification
Rank
Q
R
hFE
120 ~ 205
180 ~ 315
Marking Symbol
IQ
IR
1
2SB1073
Transistor
PC — Ta
IC — VCE
1.2
1.0
0.8
0.6
0.4
–12
1000
–10
IB=–200µA
800
–180µA
–160µA
–140µA
–120µA
600
–100µA
400
–80µA
–60µA
–40µA
200
0.2
25˚C
Ta=75˚C
–6
–25˚C
–4
–2
0
40
60
80 100 120 140 160
0
0
–2
–4
0
Forward current transfer ratio hFE
Ta=75˚C
25˚C
– 0.03
–25˚C
– 0.01
– 0.003
–3
Collector current IC (A)
–10
400
Ta=75˚C
200
– 0.8
120
500
300
– 0.4
25˚C
–25˚C
100
0
– 0.01 – 0.03 – 0.1 – 0.3
–1.2
–1.6
–2.0
Base to emitter voltage VBE (V)
Cob — VCB
VCE=–2V
–1
–1
–12
600
–3
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3
–10
hFE — IC
IC/IB=30
Ta=25˚C
– 0.3
–8
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–10
–6
Collector output capacitance Cob (pF)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
–8
–20µA
0
– 0.1
VCE=–2V
Ta=25˚C
Collector current IC (A)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
1.4
0
2
IC — VBE
1200
Collector current IC (mA)
Collector power dissipation PC (W)
1.6
–1
–3
Collector current IC (A)
–10
IE=0
f=1MHz
Ta=25˚C
100
80
60
40
20
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
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2001 MAR