Reflective Photosensors (Photo Reflectors) CNZ2153 (ON2153) Reflective photosensor Non-contact point SW, object sensing Unit: mm ■ Overview CNZ2153 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. 4.0±0.2 (3.2) 10.6±0.3 0.5 9.6±0.3 6.0±0.2 φ2.2±0.2 • Fast response • Small size and light weight 1.7±0.2 10.2 min. ■ Features φ0.45±0.05 φ0.3±0.05 (7.2) *2-0.9±0.15 2 ■ Applications • Detection of paper, film and cloth • Optical mark reading • Detection of coin and bill • Detection of position and edge • Start, end mark detection of magnetic tape Parameter Input (Light Reverse voltage emitting diode) Forward current Power dissipation *1 (Note) Symbol VR IF PD Rating 3 50 75 Unit V mA mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V Collector current Collector power dissipation *2 Operating ambient temperature Storage temperature IC PC T opr Tstg 20 50 −25 to +85 −30 to +100 mA mW °C °C 3 1: Cathode 2: Anode 3: Emitter 4: Collector PRSTR104-002 Package 1. ( ) Dimension is reference 2. * is dimension at the root of leads 1 ■ Absolute Maximum Ratings Ta = 25°C Temperature 3.0±0.2 Mark for indicating LED side 7.5±0.2 4 Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 0.67 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Forward voltage characteristics Reverse current Terminal capacitance Symbol Conditions VF IF = 50 mA IR VR = 3 V Ct VR = 0 V, f = 1 MHz Output Collector-emitter cutoff current characteristics (Base open) ICEO Transfer Collector current *1, 2 IC characteristics Collector-emitter saturation voltage VCE(sat) Rise time tr Fall time tf Q 100 to 300 Publication date: April 2004 Typ 1.2 VCC = 5 V, IF = 20 mA, RL = 100 Ω IF = 50 mA, IC = 0.1 mA VCC = 10 V, IC = 0.1 mA, RL = 100 Ω IF IC Unit V µA pF 0.2 µA 100 1200 0.5 µA V µs µs 6.0 6.0 VCC d = 3 mm RL R S No-rank 200 to 600 400 to 1 200 100 to 1 200 SHG00053BED Max 1.5 10 50 VCE = 10 V Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation 3. *1: Output current measurement circuit (Ambient light is shut off completely) 2: * Rank classification Rank IC (µA) Min White paper (Reflective ratio 90%) Note) The part number in the parenthesis shows conventional part number. 1 CNZ2153 IF , IC Ta IF V F 60 30 IC 20 10 Forward voltage VF (V) 50 40 40 30 20 0 20 40 60 80 0 100 0 0.4 0.8 IC I F 10 0.4 1 10 −1 10 −2 1 2.0 0 −40 2.4 0 ∆IC Ta 1 IF = 30 mA 20 mA Forward current IF (mA) 10 mA 1 120 80 40 0 −40 102 10 VCC = 5 V IF = 20 mA RL = 100 Ω Collector-emitter voltage VCE (V) ICEO Ta 0 40 IC d 0.32 VCC = 10 V Ta = 25°C VCC = 5 V Ta = 25°C IF = 20 mA RL = 100 Ω 1 10 −2 Collector current IC (mA) Rise time tr (µs) 102 10 −1 RL = 1 kΩ 10 500 Ω 100 Ω 1 10 −3 10 −4 −40 0 40 80 Ambient temperature Ta (°C) 10 −1 10 −2 10 −1 1 Collector current IC (mA) SHG00053BED 80 Ambient temperature Ta (°C) tr IC 103 VCE = 10 V 80 160 10 10 −1 40 Ambient temperature Ta (°C) Ta = 25°C 10 −2 10 −1 102 10 10 1.6 IC VCE VCC = 5 V RL = 100 Ω Ta = 25°C 10 −3 10 −1 1.2 102 Collector current IC (mA) Collector current IC (mA) 10 mA 0.8 Forward voltage VF (V) Ambient temperature Ta (°C) Collector-emitter cutoff current (Base open) ICEO (µA) IF = 50 mA 1.2 10 Relative collector current ∆IC (%) 0 −25 2 1.6 Ta = 25°C IF 50 Forward current IF (mA) Forward current IF , collector current IC (mA) 60 VF Ta 10 0.24 d 0.16 0.06 0 0 2 4 6 Distance d (mm) 8 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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