OPA8847 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min VF(1) Typ Max Unit Condition V IF=10uA V IF=100mA V IR=10uA 1.1 VF(2) 1.6 Reverse Voltage VR Power PO 1.65 mW IF=50mA λP 880 nm IF=20mA Wavelength 5 ∆λ 80 nm IF=20mA Rise Time Tr 700 ns Fall Time Tf 400 ns ※ Note : LED chip is mounted on TO-18 gold header without resin coating. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 17.5mil x 17.5mil --------------------- 18.5mil x 18.5mil --------------------- double pad --------------------10mil --------------------9.0mil (b) (d) (c) (a) N Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi (e) P Epi 4. Mechanical Data (a) Emission Area P Side Electrode