Infrared LED Chip OPA9415EDD GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs (N Type) GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Typ Max Unit Condition 1.3 V IF=250mA V IR=10uA Reverse Voltage VR Radiant Power PO 7 mW IF=250mA λP 940 nm IF=20mA Wavelength 5 ∆λ 45 nm IF=20mA ※ Note : LED Chip is mounted on TO-18 gold header without resin coating. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------------- 58.5mil x --------------------------- 60.0mil x 128um --------------------------11mil --------------------------6.7mil --------------------------- 58.5mil 60.0mil (d) AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr Substrate P Epi P Side Electrode N Epi (e) N Side Electrode