isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3252 DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1288 APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifier ·Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3252 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 75mA 0.4 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 100 μA hFE DC Current Gain IC= 1A; VCE= 2V Current-Gain—Bandwidth Product IC=1A; VCE= 5V fT CONDITIONS hFE Classifications Q R S 70-140 100-200 140-280 isc Website：www.iscsemi.cn 2 MIN TYP. 70 MAX UNIT 280 100 MHz