2SC4462 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4462 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4 V Collector current IC 20 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 25 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 10 V, IE = 0 Collector to emitter saturation voltage VCE(sat) — — 5 V I C = 10 mA, IB = 1 mA DC current transfer ratio hFE 30 — — Gain bandwidth product fT 700 1000 — MHz VCE = 10 V, IC = 5 mA Collector output capacitance Cob — — 0.8 pF VCB = 10 V, IC = 5 mA, f = 1 MHz Conversion gain CG — 7.0 — dB VCC = 12 V, IE = 0, f = 900 MHz Noise figure NF — 10.0 — dB f OSC = 930 Mhz (0 dBm), f out = 30 MHz Note: 2 Marking is “EC”. VCE = 10 V, IC = 3 mA 2SC4462 DC Current Transfer Ratio vs. Collector Current 100 150 DC Current Transfer Ratio hFE Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 50 VCE = 10 V 80 60 40 20 0 100 50 Ambient Temperature Ta (°C) 0 1 150 Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) 2000 VCE = 10 V 1200 800 400 0 1 2 5 10 20 Collector Current IC (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current 1600 10 20 2 5 Collector Current IC (mA) 50 1.0 f = 1 MHz IE = 0 0.8 0.6 0.4 0.2 0 1 10 20 50 2 5 Collector to Base Voltage VCB (V) 3 2SC4462 Conversion Gain vs. Collector Current 10 0.5 f = 1 MHz Base Common 0.4 0.3 0.2 0.1 0 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) Conversion Gain CG (dB) Reverse Transfer Capacitance Crb (pF) Reverse Transfer Capacitance vs. Collector to Emitter Voltage VCC = 12 V f = 900 MHz fosc = 930 MHz (0 dBm) fout = 30 MHz 8 6 4 2 0 3 4 1 2 Collector Current IC (mA) Noise Figure vs. Collector Current Noise Figure NF (dB) 20 16 12 8 4 0 4 VCC = 12 V f = 900 MHz fosc = 930 MHz (0 dBm) fout = 30 MHz 1.2 1.6 0.4 0.8 Collector Current IC (mA) 2.0 5 2SC4462 Conversion Gain and Noise Figure Test Circuit 1k C2 C3 200 µ fosc = 930 MHz (0 dBm) L5 L6 80 p L4 fout = 30 MHz RL = 50 Ω L3 L1 D.U.T. L2 C1 8 p* f = 900 MHz 12 p 0.047 µ 100 * Disk Capacitor 23 L1 : φ1 mm Enameled Copper Wire 7 13 90° 90° 7 20 L3 : φ1 mm Enameled Copper Wire 90° L4 : φ1 mm Enameled Copper Wire L5 : Bobbin φ5 mm inside dia, φ0.2 mm Enameled Copper Wire 20 Turns L6 : φ0.5 mm Enameled Copper Wire 1 Turn inside dia φ6 mm C1 : 20 pF max. Air Trimmer Condenser C2, C3 : 1000 pF Air Core Capacitor 7 13 90° 4 90° 120° 22 L2 : φ1 mm Enameled Copper Wire Unit R : Ω C:F L:H 11 3 130° 11 90° (Dimensions in mm) 5 0.1 0.3 +– 0.05 0.2 0.65 0.65 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 0.1 0.16 +– 0.06 0 – 0.1 0.425 1.25 ± 0.1 0.1 0.3 +– 0.05 2.1 ± 0.3 2.0 ± 0.2 0.425 Unit: mm Hitachi Code JEDEC EIAJ Weight (reference value) CMPAK — Conforms 0.006 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.