Ordering number:ENN6336 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Package Dimensions unit:mm 2165 [2SA2023/2SC5611] 8.0 1.4 3.3 3.0 11.0 4.0 1.0 1.0 7.5 · Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobes, flash, fluorescent lamp lighting circuit). · Power amplifier (high-power car stereo, motor control). · High-speed switching (switching regulater, driver circuit). 1.5 Applications 1.6 0.8 · Low collector-to-emitter saturation voltage. · Excellent dependence of hFE on current. · High-speed switching. · Micaless package facilitating mounting. 15.5 3.0 Features 0.8 0.7 0.75 1 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO126ML 3 1.7 2.4 4.8 Specifications Note : The emitter and base are reversely assigned to those of our standard products encapsulated in the TO126ML package. Note * ( ) : 2SA2023 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)80 V Collector-to-Emitter Voltage VCEO VEBO (–)60 V (–)5 V IC (–)5 A ICP (–)7 A 1.3 W Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 10 W 150 ˚C –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE fT Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE(sat) Conditions Ratings min typ VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)5V, IC=(–)1A IC=(–)2.5A, IB=(–)0.125A 110 max Unit (–)0.1 mA (–)0.1 mA 200 100 MHz (–)0.4 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13100TS (KOTO) TA-2336 No.6336–1/4 2SA2023/2SC5611 Continued on preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Ratings Conditions min V(BR)CBO IC=(–)1mA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO ton Turn-ON Time Storage Time max Unit (–)80 V (–)60 V IE=(–)1mA, IC=0 tstg tf Fall Time typ (–)5 V See specified Test Circuit 0.1 µs See specified Test Circuit 0.5 µs See specified Test Circuit 0.1 µs Switching Time Test Circuit IB1 IB2 PW=20µs D.C.≤1% OUTPUT INPUT VR RB RL=10Ω 50Ω + + 470µF 100µF VCC=20V VBE=--5V 20IB1=--20IB2=IC=2A (For PNP, the polarity is reversed.) IC -- VBE --6 2SC5611 VCE=2V C 20° 2 1 0 C C 3 --40° --1 --40° --2 25°C 20° C --3 4 25°C --4 Ta= 1 Collector Current, IC – A 5 Ta= 1 Collector Current, IC – A --5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V --1.2 2SA2023 VCE=--2V 7 0 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE – V 2SC5611 VCE=2V 7 5 3 DC Current Gain, hFE Ta=120°C 2 25°C --40°C 100 7 5 3 5 2 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 7 --10 IT00514 --40°C 7 3 5 7 --0.1 25°C 100 2 3 Ta=120°C 2 3 2 1.2 IT00513 hFE -- IC 1000 5 10 --0.01 0.2 IT00512 hFE -- IC 1000 DC Current Gain, hFE IC -- VBE 6 2SA2023 VCE=--2V 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 2 3 5 7 10 IT00515 No.6336–2/4 2SA2023/2SC5611 f T -- IC 2SA2023 VCE=--5V 7 5 3 2 100 7 5 3 2 2 5 3 2 100 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 VCE(sat) -- IC --100 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE (sat) – V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 2 --0.01 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A era nT 1ms tio op era c= 25 °C tio nT a= 3 2 25 °C --0.1 7 5 2SA2023 Ta=25°C Single pulse --0.01 --0.1 2 3 2 3 5 7 --10 2 3 5 7--100 Collector-to-Emitter Voltage, VCE – V 2 1.3 7 0.1 he at sin k 0.4 0.2 0 3 2 5 7 1.0 2 3 5 7 10 IT00519 10µs IC 3 2 DC DC 1.0 7 5 op era tio op nT era 25 °C nT a= 3 2 25 °C 0.1 7 5 1ms c= tio 100µs 2SC5611 Ta=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE – V 2 IT00521 PC -- Tc 12 Collector Dissipation, PC – W Collector Dissipation, PC – W 5 ICP IT00520 1.0 0.6 3 ASO 0.01 0.1 1.2 0.8 2 Collector Current, IC – A 2SA2023 / 2SC5611 N o 2SC5611 IC / IB=20 0.01 PC -- Ta 1.4 5 7 10 IT00517 0.1 7 5 3 2 0.01 3 2 5 7 --1.0 3 s 0µ 50 op 2 ms 10 ms 0 10 s 0µ 50 ms 10 s 0m DC --1.0 7 5 5 7 1.0 VCE(sat) -- IC 10 7 5 10 DC 100µs 3 1.0 7 5 3 2 10µs IC 3 2 2 Collector Current, IC – A 2 ICP --10 7 5 5 7 0.1 10 7 5 3 2 ASO 2 3 3 2 5 7 --10 IT00518 Collector Current, IC – A 2 100 7 5 2SA2023 IC / IB=--20 --10 7 5 3 2 3 2 10 0.01 5 7 --10 IT00516 Collector Current, IC – A Collector Current, IC – A Collector-to-Emitter Saturation Voltage, VCE (sat) – V 3 2SC5611 VCE=5V 7 10 --0.01 f T -- IC 1000 Gain-Bandwidth Product, fT – MHz Gain-Bandwidth Product, fT – MHz 1000 2SA2023 / 2SC5611 10 8 6 4 2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00522 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT01783 No.6336–3/4 2SA2023/2SC5611 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6336–4/4