SANKEN 2SD2014_01

2SD2014
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257)
ICBO
VCEO
80
V
IEBO
VEBO
6
V
V(BR)CEO
IC
4
A
hFE
VCE=2V, IC=3A
2000min
Conditions
Unit
VCB=120V
10max
µA
VEB=6V
10max
mA
IC=10mA
80min
V
10.1±0.2
IB
0.5
A
VCE(sat)
IC=3A, IB=3mA
1.5max
PC
25(Tc=25°C)
W
VBE(sat)
IC=3A, IB=3mA
2.0max
V
Tj
150
°C
fT
VCE=12V, IE=–0.1A
75typ
MHz
°C
COB
VCB=10V, f=1MHz
45typ
pF
3.9
V
1.35±0.15
1.35±0.15
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
30
10
3
10
–5
10
–10
1.0typ
4.0typ
1.5typ
0
0.3mA
0
1
2
3
0
4
1A
0.2
1
Collector-Emitter Voltage V C E (V)
5
10
50
(V C E =4V)
20000
10000
DC C urrent G ain h FE
Typ
5000
1000
500
100
5000
125
1
˚C
˚C
25
0˚C
–3
1000
500
100
50
0.5
Transient Thermal Resistance
10000
0.1
50
30
0.03
4
0.1
Collector Current I C (A)
0.5
p)
ase Tem
ase Tem
1
2
1
4
5
1
0.5
1
5
10
50
100
500 1000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
p)
p)
e Tem
0
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
20000
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =10V)
25
10
si
nk
Collector Cur rent I C (A)
2
at
0.1
0x
he
Without Heatsink
Natural Cooling
1 00x 1 0
10
ite
0.5
150x150x2
fin
1
20
In
20
s
s
DC
ith
40
m
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
W
Typ
60
0m
s
80
10
s
0µ
100
10
30
5
1m
M aximu m Power Dissipa tion P C (W)
120
Cut -off Fre quen cy f T ( MH Z )
DC Curr ent Gain h FE
0
100
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.03
1
Base Current I B (mA)
h FE – I C Characteristics (Typical)
30
2
(Cas
2A
1
I C =4 A
3A
–30˚C (C
1
2
125˚C
0. 4m A
2
3
Collector Current I C (A)
0. 5m A
(V CE =4V)
4
θ j- a ( ˚ C/W)
Collector Current I C (A)
0 .6 m A
3
I C – V BE Temperature Characteristics (Typical)
3
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
IB
0 .8 m
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B C E
V CE ( sat ) – I B Characteristics (Typical)
A
=2
0m
A
m
1.0
2.4±0.2
2.2±0.2
VCC
(V)
4
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.3±0.2
a
b
25˚C (C
–55 to +150
4.2±0.2
2.8 c0.5
4.0±0.2
V
0.8±0.2
120
±0.2
Unit
VCBO
Tstg
External Dimensions FM20(TO220F)
(Ta=25°C)
Ratings
8.4±0.2
■Electrical Characteristics
Ratings
Symbol
(3kΩ) (200Ω) E
Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
16.9±0.3
■Absolute maximum ratings (Ta=25°C)
C
B
13.0min
Darlington
Symbol
Equivalent
circuit
50x50x2
Without Heatsink
2
0
–0.02
0.05
–0.05 –0.1
–0.5
–1
Emitter Current I E (A)
140
–4
3
5
10
50
Collector-Emitter Voltage V C E (V)
100
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150