SHARP PD663PS

PD663PS/PD666PS
PD663PS/PD666PS
6-division photodiodes
■ Features
■ Outline Dimensions
(Unit: mm)
Internal connection diagram
1. For 3 beams(6-division photodiodes)
2. With non-reflective layer
3. Transparent transfer molded package
1.2
2.2
Y
8
7
6
5
1
2
3
4
Detector center
A1
■ Applications
0.5
1. Optical pick-up for CD player
Enlarged Figure of Light Detecting Portion
2
2.5±0.2
(Unit: µm)
3
X'
A2
0.4
1
12.4
4.0±0.1
2.0 ±0.2
B2 B1
X
B4
B3
4
5
1.27
6
7
8
Y'
1 3 4
Y
Anode
5 7 8
Anode
2 6
Cathode
.5
5
.5
40
.5
67
B3
10˚
0.63
10˚
Transparent epoxy resin
40
5
5.0±0.1
0
16
0
20
PD663PS
Y'
Y
A2
B3 B4
150 72.5 72.5
30
A1
72.5 72.5
X
250
5
5
B2 B1
X'
150
30
PD666PS
Y'
■ Absolute Maximum Ratings
*1
Parameter
Reverse voltage
Operating temperature
Storage temperature
Soldering temperature
0.15
X'
B4
B2
A2
67
Chip (Light detecting portion)
16
97
0
.5
B1
X
10˚
0.97
A1
97
10˚
1.5±0.1
0
20
45˚±3˚
Symbol
VR
T opr
T stg
T sol
(Ta=25˚C)
Ratings
30
-25 to +85
-40 to +85
260
Unit
V
˚C
˚C
˚C
*1 For MAX. 3 seconds at the position of 1.0mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PD663PS/PD666PS
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Conditions
PD663PS
*2 *3
Short circuit current
I SC
E V=1000 lx
Reverse voltage
VR
I R =10mA
Dark current
Id
V R =15V
Terminal Capacitance
Ct
V R =15V
f=1MHz
Peak sensitivity wavelength
λP
Cut-off frequency
fC
Sensitivity
S
*4
PD666PS
*5
V R =15V,R L=50Ω
Output: -3dB at 500 kHz
λ=780nm
*6
A
B
A
B
A,B
A
B
A
B
A,B
A
B
A,B
MIN.
340
80
400
70
30
0.45
TYP.
490
120
570
100
3
2
840
35
35
0.55
MAX.
640
160
740
130
300
200
0.65
*2 Values in each element. Elements other than subject elements shall be measured while the anode and the cathode are short-circuited to each other.
*3 Short-circuit currents at two segments on both ends and four segments on the center of the element shall be within ±10% of the average.
( standard light source A(tungsten lamp)
*4 Ev:Illuminance by CIE
*5 Values in each element.
*6 Like signs represent like elements in the light detector.
A
B
B
B
B B
B B
A
B
A
A
PD663PS
PD666PS
Fig.2 Spectral Sensitivity
100
100
80
80
Relative sensitivity (%)
Power dissipation P (mW)
Fig.1 Power Dissipation vs.
Ambient Temperature
60
40
20
0
-25
Ta=25˚C
60
40
20
0
25
50
75
Ambient temperatuer Ta (˚C)
100
0
400
500
600
700 800 900 1000 1100
Wavelength λ (nm)
Unit
nA
nA
nA
nA
V
pA
pA
pF
pF
nm
MHz
MHz
A/W
PD663PS/PD666PS
FIG. 3 Dark Current vs. Ambient Temperature
Dark Current Id (A)
10
Fig.4 Dark Current vs. Reverse Voltage
-8
10
A: Tracking pattern
B: Focusing pattern
Ta=25˚C
A: Tracking pattern
B: Focusing pattern
-9
-10
10
A
-11
10
B
-12
10
-13
10
-9
VR=15V
Dark Current Id (A)
10
-25
0
25
50
75
100
10
-10
10
-11
10
-12
10
-13
A
B
0.01
0.1
Fig.5 Terminal Capacitance vs. Reverse Voltage
1000lx A Light source
A: Tracking pattern
B: Focusing pattern
105
Relative output (%)
Terminal Capacitance Ct (pF)
Fig.6 Relative Sensitivity vs.
Ambient Temperature
f=1MHz
Ta=25˚C
A
14
12
10
8
B
6
4
2
0
0.1 0.2
100
95
Output at Ta=25˚:100%
90
0.5
1
2
5
10
20
85
-25
50
Reverse Voltage VR (V)
Fig.7 Responce Time vs. Load Resistance
10
1
10
0
0
Fig.8 Frequency Response
+2
VR=10V
Ta=25˚C
responsivity (dB)
Responce Time tr,tf (µs)
tr' tf
10
-1
100
25
50
75
Ambient Temperature Ta (˚C)
V=15V
RL=50Ω
Ta=25˚C
Input: Laser diode
(λp=780mm)
0
10
100
110
26
24
22
20
18
16
10
10
Reverse Voltage VR (V)
Ambient Temperature Ta (˚C)
2
1
-2
-4
-6
-2
10
1
10
2
10
3
10
Load Resistance RL (kΩ)
4
10
5
-8
0.1
0.5 1
5
10
frequency f (MHz)
50 100