isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 APPLICATIONS ·Low frequency medium power amplifier and medium speed switching applications. ·Pulse motor driver, relay drive and hammer drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 1.5 A PC Collector Power Dissipation TC=25℃ 10 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD689 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD689 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 2mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A ,IB= 2mA 2.5 V ICBO Collector Cutoff Current VCB= 100V, IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.1A ; VCE= 2V 2000 hFE-2 DC Current Gain IC= 1A ; VCE= 2V 1000 Switching Times ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IB1= -IB2= 2mA; VCC= 30V RL= 30Ω;PW=20μs; Duty Cycle≤1% 0.3 μs 2.0 μs 0.7 μs