HITACHI 2SK1831

2SK1831, 2SK1832
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-3PFM
D
G
1
S
2
3
1. Gate
2. Drain
3. Source
2SK1831, 2SK1832
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
K1831
Symbol
Ratings
Unit
VDSS
450
V
K1832
500
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
±30
V
10
A
30
A
10
A
Channel dissipation
Pch*
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK1831, 2SK1832
Electrical Characteristics (Ta = 25°C)
Item
Drain to source
K1831
breakdown
voltage
K1832
Symbol
Min
Typ
Max
Unit
Test Conditions
V(BR)DSS
450
—
—
V
I D = 10 mA, VGS = 0
500
—
—
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate
K1831
I DSS
—
—
250
µA
VDS = 360 V, VGS = 0
voltage drain
current
K1832
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static drain to
K1831
RDS(on)
—
0.6
0.8
Ω
ID = 5 A
source on state
resistance
K1832
—
0.7
0.9
VGS = 10 V*1
Forward transfer admittance
|yfs|
4.0
7.0
—
S
ID = 5 A
VDS = 10 V*1
Input capacitance
Ciss
—
1050
—
pF
VDS = 10 V
Output capacitance
Coss
—
280
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
40
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
15
—
ns
ID = 5 A
Rise time
tr
—
60
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
90
—
ns
RL = 6 Ω
Fall time
tf
—
45
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
350
—
ns
I F = 10 A, VGS = 0,
diF / dt = 100 A / µs
Notes 1. Pulse Test
See characteristic curves of 2SK1157, 2SK1158
3
2SK1831, 2SK1832
Maximum Safe Operation Area
Power vs. Temperature Derating
Drain Current I D (A)
3
1
0.3
Ta = 25°C
K1831
K1832
0.05
50
100
150
1
Normalized Transient Thermal Impedance
γ s (t)
3
10
30
100
300 1000
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3
0.2
θch – c(t) = γ s(t). θ ch – c
θ ch – c = 2.50°C/W, Tc = 25°C
0.1
0.1
0.03
0.05
PDM
0.02
0.01
0.01
10 µ
ho
1S
100 µ
D=
PW
lse
t Pu
PW
T
T
1m
10 m
Pulse Width PW (S)
4
s
=
10
O
m
pe
s
ra
(1
tio
sh
n
ot
(T
Operation in this
)
c
=
area is limited
25
°C
by R DS (on)
)
D
C
0.1
0
µs
PW
s
m
25
10
1
50
µ
0
10
Channel Dissipation Pch (W)
10
50
30
75
100 m
1
10
15.6 ± 0.3
5.5 ± 0.3
5.0
1.6
1.4 Max
3.2
21.0 ± 0.5
4.0
2.6
1.4 Max
2.7
19.9 ± 0.3
φ3.2
+ 0.4
– 0.2
5.0 ± 0.3
Unit: mm
1.0 ± 0.2
5.45 ± 0.5
0.6 ± 0.2
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3PFM
—
—
5.6 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.